Time filter

Source Type

Santa Clara, CA, United States

Dutta A.,Jadavpur University | Koley K.,Jadavpur University | Saha S.K.,Ultrasolar technology | Sarkar C.K.,Jadavpur University
IEEE Transactions on Electron Devices | Year: 2014

In this paper, the harmonic distortion (HD) in the underlap double-gate MOSFETs (UDG-MOSFETs) with high-k spacers is analyzed. The HD occurs due to the nonlinearity in the device performance and therefore, a detailed analysis of the HD as a function of spacer dielectric constant (k) is critical to ensure device reliability for RF performance. In this paper, the analysis is performed for the primary components, the second-order distortion (HD2), and the third-order distortion (HD3) along with the total HD. The parameters analyzed for the HD study of the UDG-MOSFETs with high-k spacers are the drain current, the transconductance, and the transconductance generation factor. The results of the analysis suggest a reduction in the distortion phenomenon for the high-k spacer devices, thereby ensuring reliability of these devices for RF applications. Also, a detailed analysis of HD2 and HD3 as a function of k of the high-k spacers are performed using UDG-MOSFETs in cascode and differential amplifier circuits. © 1963-2012 IEEE. Source

Ghosh S.,Jadavpur University | Koley K.,Jadavpur University | Saha S.K.,Ultrasolar technology
IEEE Journal of the Electron Devices Society | Year: 2015

This paper presents the results of a systematic theoretical investigation on the impact of gate height on the analog and radio-frequency (RF) performances of underlap-FinFET devices. The conventional underlap-FinFETs offer lower on current (Ion) and higher distributed channel resistance (Rch). This paper shows that a higher gate height improves both Ion and Rch due to higher gate side-wall fringing fields. In this paper, the various figure of merits (FOMs) for analog applications of the underlap-FinFETs such as drain current (Ids) , transconductance (gm), transconductance generation factor (gm/Ids) , output resistance (Ro), and intrinsic gain (gmRo) are systematically analyzed for different values of gate height and reported. The RF FOMs studied include intrinsic capacitances (Cgs, Cgd) and resistances (Rgs, Rgd), transport delay (τm), cutoff frequency (fT), and the transit frequency of maximum available power gain (fMAX). This paper clearly demonstrates that the gate height is a critical technology parameter in improving the analog performance of underlap-FinFETs. © 2013 IEEE. Source

Koley K.,Jadavpur University | Dutta A.,Jadavpur University | Saha S.K.,Ultrasolar technology | Sarkar C.K.,Jadavpur University
IEEE Transactions on Electron Devices | Year: 2015

In this paper, asymmetric underlap double-gate (AUDG) MOSFET is studied to analyze the influence of high-κ spacer on the intrinsic device parameters. The AUDG-MOSFET architecture offers better device performance, particularly, drain-induced barrier lowering in contrast to the conventional double-gate (DG)-MOSFET. However, the ON current and the distributed resistances for the device increase considerably. The analysis of the device presented here shows that the detrimental effects of the device can be effectively eliminated using high-κ spacers. To evaluate the device performance and to study the improvement associated with the use of high-κ spacers, different intrinsic parameters are analyzed. These parameters include transconductance ( gm) , transconductance generation factor (gm/Id ), intrinsic gain (gmro), intrinsic capacitance (Cgd, Cgs), resistance (Rgd, Rgs), transport delay (τm), inductance (Lsd), cutoff frequency ( fT), and the maximum frequency of oscillation ( fmax), gain bandwidth product, and inverter delay, © 2015 IEEE. Source

Ultrasolar technology | Date: 2011-12-07

A method, an apparatus and/or a system of non-decaying electric power generation from pyroelectric materials is disclosed. In one aspect, a method includes generating a substantially continuous electric energy from an at least one layer of pyroelectric material when the at least one layer of pyroelectric material is subjected to a temporal temperature gradient, a varying electric field and/or a mechanical oscillation. The method also includes creating the temporal temperature gradient, the varying electric field and/or the mechanical oscillation through coupling the at least one layer of pyroelectric material in between a first layer of a first material and a second layer of a second material that harnesses a heat energy and/or an electric field energy to produce the temporal temperature gradient and/or the mechanical oscillation to which the at least one layer of pyroelectric material is subjected

Ultrasolar technology | Date: 2012-06-13

apparatus for increasing output efficiency of solar modules for production of energy.

Discover hidden collaborations