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Veurey-Voroize, France
Veurey-Voroize, France
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A method of manufacturing a device having a microelectronic component housed in a hermetically sealed vacuum housing, including forming a getter in said housing, pumping out and heating the device to degas elements housed in said housing, after said pumping, hermetically sealing the housing in fluxless fashion. Further, each material forming the device likely to degas into the inner space is a mineral material, the getter is capable of substantially trapping hydrogen only and is inert to oxygen and/or to nitrogen and the heating and the sealing are performed at a temperature lower than 300 C.


Patent
Ulis and French Atomic Energy Commission | Date: 2017-01-06

A method of manufacturing a detector capable of detecting a wavelength range [_(8); _(14)] centered on a wavelength _(10), including: forming said device on a substrate by depositing a sacrificial layer totally embedding said device; forming, on the sacrificial layer, a cap including first, second, and third optical structures transparent in said range [_(8); _(14)], the second and third optical structures having equivalent refraction indexes at wavelength _(10 )respectively greater than or equal to 3.4 and smaller than or equal to 2.3; forming a vent of access to the sacrificial layer through a portion of the cap, and then applying, through the vent, an etching to totally remove the sacrificial layer.


A device (60) for integrating an electrical current during a period Tint, comprises an operational amplifier (62), and a capacitor (64) connected between a first input and an output of the amplifier (62), a second input of the amplifier (62) being brought to a voltage VBUS, the output voltage Vout of the amplifier (62) saturating at a high voltage VSatH and at a low voltage VsatH depending on the amount of charge on the capacitor (64). The device (60) also comprises: a circuit (72) for switching the terminals of the capacitor (64); and a circuit (74) for triggering the circuit (72) at least once during the period Tint when the voltage Vout is both increasing and substantially equal to a reference voltage VREF, said voltage VREF being lower than or equal to the voltage VsatH, and the reference voltage VREF and the voltage VBUS (62) being chosen so as to respect relationship 2. VBUS - VREFVsatL; and a circuit (76) for memorising the number of times the circuit (72) is triggered between the start time and end time of the integration period.


A method of manufacturing a device having a microelectronic component housed in a hermetically sealed vacuum housing, involves creating a gas trap in said housing, pumping and heating the device in order to release the gases from the elements housed in said housing, after said pumping, hermetically sealing the housing without the use of flux. Furthermore, each material of which the device is made that is capable of degassing into the internal volume is a mineral material, the gas trap is capable of trapping substantially only hydrogen and is inert to oxygen and/or to nitrogen and the heating and sealing are performed at a temperature below 300C.


A bolometric detection device includes a substrate having a read-out circuit. The device also includes an array of elementary detectors each including a membrane suspended above the substrate and connected to the read-out circuit by at least two electric conductors. The membrane has two electrically-conductive electrodes respectively connected to the two electric conductors, and a volume of transducer material electrically connecting the two electrodes. The read-out circuit is configured to apply an electrical stimulus between the two electrodes of the membrane and to form an electric signal as a response to said application. The volume includes a volume of a first transducer material electrically connecting the two electrodes of the membrane and forming walls of a closed enclosure having each of the electrodes at least partially housed therein; and a volume of a second transducer material, electrically connecting the two electrodes and housed in the enclosure, the electric resistivity of the second material being smaller than the electric resistivity of the first material; and the two transducer materials having a negative thermal coefficient of resistivity TCR.


A device for integrating an electric current during a period T_(int), including an operational amplifier and a capacitor connected between a first input and an output of the amplifier, a second input of the amplifier being taken to a voltage VBUS, output voltage V_(out )of the amplifier being saturated at a high voltage V_(satH )and a low voltage V_(satH )according to the charge quantity in the capacitor. The device also includes: a circuit for switching the terminals of the capacitor; and a circuit for triggering the circuit at least once during period T_(int )when voltage V_(out )both grows and is substantially equal to a reference voltage VREF, the voltage VREF being smaller than or equal to voltage V_(satH), and reference voltage VREF and voltage VBUS being selected to comply with relation 2VBUSVREFV_(satL); and a storage circuit for storing the number of triggerings having occurred between the initial time and the end time of the integration period.


Method of diagnosing the state of signal-forming chains of a detector including an array of detection bolometers, each chain comprising a bolometer, a circuit of stimulation, and a circuit forming a signal according to said stimulation, including forming an image of a substantially uniform scene on the array; applying at least first and second stimulations to the chains; reading the formed signals; and for each chain in a predetermined set, defining a neighborhood of chains; calculating coefficients of a polynomial interpolating the values of signals formed by said chain; calculating, for each chain of the neighborhood, coefficients of a polynomial interpolating the values of signals formed by said neighborhood chain; calculating an average and standard deviation of said coefficients of the neighborhood chains or of the set of neighborhood chains and said chain; and diagnosing if said chain is defective using the coefficients and the calculated average and standard deviation.


A method for detecting infrared radiation by using an array of bolometers. The following steps are used to read a bolometer of the array of bolometers: biasing the bolometer at a predetermined voltage in order to make current flow through the bolometer; subtracting a common-mode current from the current that flows through the bolometers; and producing a voltage by integrating the difference between the current that flows through the bolometers and the common-mode current.


An infrared detector including an array of detection bolometers each having a bolometric membrane suspended above a substrate, and associated with each bolometer: a detection branch, including the bolometer and a circuit performing a biasing according to a voltage set point, a compensation branch, including a compensation bolometer thermalized to the substrate, a circuit performing a biasing according to a voltage set point, an integrator for generating a voltage by integrating a difference between the currents flowing through said branches, a circuit generating a quantity depending on substrate temperature, including: a bolometer thermalized to the substrate, and a circuit for biasing the bolometer, and a circuit for generating the voltage set points according to said quantity. When the array is exposed to a uniform reference scene, the average of the differences between currents flowing through said branches is within the integrator dynamic range for a substrate temperature range from 30 C.-90 C.


The invention concerns a method of image processing involving: receiving, by a processing device, an input image (IB) captured by a pixel array sensitive to infrared radiation; determining, based on the input image and on a column component vector (VCOL), a first scale factor () by estimating a level of the column spread present in the input image; generating column offset values (.VCOL(y)) based on the product of the first scale factor with the values of the vector; determining, based on the input image and on a 2D dispersion matrix (IDISP), a second scale factor () by estimating a level of the 2D dispersion present in the input image; generating pixel offset values (.IDISP(x,y)) based on the product of the second scale factor with the values of the matrix; and generating a corrected image (IC) by applying the column and pixel offset values.

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