Uiduk University is a private university located in Kyungju, Gyeongsangbuk-do, South Korea. It is situated midway between Pohang and Kyungju near the village of Gangdong-myeon. It has an Department of Buddhist Cultural Studies, Language Division , Division of Public Administration, Division of Self-designed major, Department of Early Childhood Education, Division of Special Education Department of Social Welfare, Department of Health, Department of Nursing, Department of Physical Therapy, Department of Business Management, Department of Airlines and Tourism, Division of Food Service Industry, Division of Physical Education Division of Steel IT, Division of Mechanical and Electrical Engineering The university offers graduate programs leading to either an M.A. and or a PhD. The university is owned and operated by the Jingkak Buddhist Order. It opened its doors to the first intake of students on March 3, 1996.The university libraryis open late, but its users in the later hours are not Uiduk students, but students from other universities or person's preparing to study abroad or families where the parents are encouraging their children to do some extra work for themselves.The university has opened up courses for foreign students to learn Korean, and then enroll in the regular courses. The existing foreign student programme has students from China, Vietnam and the Philippines. Many of these students are attracted to Korea, because of its standing in the electronics and the semiconductor industry. They come to learn Korean, and then join another technical department as a full-time student. Wikipedia.
Park S.-Y.,Uiduk University
Journal of Physical Therapy Science | Year: 2017
[Purpose] The purpose of the present study was to examine the intrarater reliability and intrarater reliability of lateral scapular slide tests among young females. [Subjects and Methods] A total of 60 female students in U University in Gyeongsangbuk-do, South Korea participated in this study. Lateral scapular slide tests (LSST) were conducted to identify interrater & intrarater reliability. In the LSSTs, the distance from the inferior angle of the scapula to thoracic vertebral spinous process T8 was measured in three positions (shoulder joint 0°, 45°, and 90° abduction) using tape measures. [Results] Intrarater reliability is shown to be moderate with scores not lower than 0.7 in left positions 1 and 3 and is shown to be excellent with scores not lower than 0.9 in the remaining positions. Interrater reliability is shown to be excellent with scores not lower than 0.9 in all three left and right positions. [Conclusion] LSST is sufficiently high to be accepted as an objective tool in the results of general previous studies. In addition, it can be considered useful at clinics because the measuring tool and method are simple. © 2017 The Society of Physical Therapy Science. Published by IPEC Inc.
Ohata A.,Osaka City University |
Bae Y.,Uiduk University |
Fenouillet-Beranger C.,CEA Grenoble |
Fenouillet-Beranger C.,STMicroelectronics |
Cristoloveanu S.,Grenoble Institute of Technology
IEEE Electron Device Letters | Year: 2012
Carrier mobility (μ) at various back-gate biases is studied for n-and p-channel ultrathin (8 nm) SOI MOSFETs with thin (10 nm) buried oxide (BOX) and ground plane (GP). We found that μ did not deteriorate for either thin BOX or GP structure, even in the back channel (BC). We also found the largest μ enhancement effect in p-channel devices by the back-gate bias. As this enhancement effect could conceal the superior μ at the Si/SiO 2 interface, μ was maximized when both the front channel and BC were conducting. By contrast, μ in n-channel devices was maximized only when the BC was activated. This large μ gain in p-channel devices is promising for further CMOS scaling. © 2012 IEEE.
Park H.-S.,Uiduk University
Current Applied Physics | Year: 2010
To improve the breakdown voltage, we propose a SOI-based LDMOSFET with a trench structure in the drift region. Due to the trench oxide and underneath boron implanted layer, the surface electric field in the drift region effectively reduced. These effects resulted in the increment of breakdown voltage for the trenched LDMOS more than 100 V compared with the conventional device. However, the specific on-resistance, which has a trade-off relationship, is slightly increased. In addition to the trench oxide on the device performance, we also investigated the influence of n- drift to n+ drain junction spacing on the off-state breakdown voltage. The measured breakdown voltages were varied more than 50 V with different n- to n+ design spaces and achieved a maximum value at LDA = 2.0 μm. Moreover, the influence of field plate on the breakdown voltage of trench LDMOSFET was investigated. It is found that the optimum drain field plate over the field oxide is 8 μm. © 2009 Elsevier B.V. All rights reserved.
Lee J.-S.,Uiduk University
Journal of the Korean Physical Society | Year: 2016
Polysilicon layers acting as an absorption layer in a metal-semiconductor-metal (MSM) photodetector were post-annealed with various annealing processes to find the relationship between the morphology of polysilicon and the photo-response of the MSM photodetector. Among the processes, rapid thermal anneal (RTA) was a suitable post-annealing process because it supplied polysilicon layers having a smoother surface and a proper grain size for photon absorption. Therefore, MSM photodetectors that based on RTA-processed polysilicon showed a higher sensitivity for photocurrent detection and a stable Schottky contact barrier to lower the dark current and that are applicable to sensor systems. © 2016, The Korean Physical Society.
Lee M.,Uiduk University |
Gardner J.E.,University of Oklahoma
Educational Gerontology | Year: 2010
This study reviews recent literature related to grandparents' involvement and support for grandchildren with disabilities and their grandchil-drens' family. The literature reveals that grandparents' initial reactions are similar to parents' reactions of shock, anger, and grief when they learn a grandchild has a disability. Over time, grandparents become involved in their grandchild's family system, providing practical and emotional support. Factors that influence grandparents' support and involvement include residential proximity, their level of understanding of their grandchild's disability, and the affective solidarity between them and their adult child who is the parent of the grandchild. Grandparents' support and involvement is promoted when they have access to accurate information regarding their grandchild's disability, experience good communication exists between them and their adult child, and when support groups or workshops are available to them in their community. A variety of unexplored areas are identified where additional and longitudinal research may yield new and interesting information regarding our understanding of factors that effect grandparents' involvement and support in families with children with disabilities. © Taylor & Francis Group.
Jang J.O.,Uiduk University
Journal of Intelligent and Robotic Systems: Theory and Applications | Year: 2011
A control structure that makes possible the integration of a kinematic controller and a neuro-fuzzy network (NFN) dynamic controller for mobile robots is presented. A combined kinematic/dynamic control law is developed using backstepping and stability is guaranteed by Lyapunov theory. The NFN controller proposed in this work can deal with unmodeled bounded disturbances and/or unstructured unmodeled dynamic in the mobile robot. On-line NFN parameter tuning algorithms do no require off-line learning yet guarantee small tracking errors and bounded control signals are utilized. © Springer Science+Business Media B.V. 2010.
Lee J.-S.,Uiduk University
Journal of Nanoscience and Nanotechnology | Year: 2016
The electrical behavior of metal-semiconductor-metal (MSM) Schottky barrier photodetector structure, depending on deuterium treatment, is analyzed by means of the dark current and the photocurrent measurements. Al/Ti bilayer was used as Schottky metal. The deuterium incorporation into the absorption layer, undoped polysilicon, was achieved with annealing process and with ion implantation process, respectively. In the photocurrent-to-dark current ratio measurement, deuterium-ionimplanted photodetector shows over hundred higher than the control device. It means that the heightening of the Schottky barrier and the passivation of grain boundary trap were achieved effectively through the deuterium ion implantation process. Copyright © 2016 American Scientific Publishers All rights reserved Printed in the United States of America.
Lee J.-S.,Uiduk University
Transactions on Electrical and Electronic Materials | Year: 2012
This paper introduces a new method regarding deuterium incorporation in the gate dielectric including deuterium implantation and post-annealing at the back-end-of-the process line. The control device and the deuterium furnaceannealed device were also prepared for comparison with the implanted device. It was observed that deuterium implantation at a light dose of 1×10 12 - 1×10 14/cm 2 at 30 keV reduced hot-carrier injection (HCI) degradation and negative bias temperature instability (NBTI) within our device structure due to the reduction in oxide charge and interface trap. Deuterium implantation provides a possible solution to enhance the bulk and interface reliabilities of the gate oxide under the electrical stress. © 2012 KIEEME. All rights reserved.
Uiduk University | Date: 2013-07-11
Provided are a three-phase coaxial superconducting power cable and a structure thereof. A certain space is formed between adjacent superconducting wires of a superconducting layer (disposed at an outer portion) having more superconducting wires among a plurality of superconducting layers, and another wire is disposed in the space, or the superconducting wires of the respective superconducting layers are disposed to have different critical currents. Accordingly, a waste of superconducting wires is prevented, and the optimized three-phase coaxial superconducting power cable is provided.
Lee Y.-K.,Uiduk University
Korean Journal of Materials Research | Year: 2012
La1-xSrxMnO3(LSM, 0 ≤ x ≤ 0.5) powders as the air electrode for solid oxide fuel cell were synthesized by a glycinenitrate combustion process. The powders were then examined by X-ray diffraction(XRD) and scanning electron microscopy (SEM). The as-formed powders were composed of very fine ash particles linked together in chains. X-ray maps of the LSM powders milled for 1.5 h showed that the metallic elements are homogeneously distributed inside each grain and in the different grains. The powder XRD patterns of the LSM with x < 0.3 showed a rhombohedral phase; the phase changes to the cubic phase at higher compositions(x ≥ 0.3) calcined in air at 1200oC for 4 h. Also, the SEM micrographs showed that the average grain size decreases as Sr content increases. Composite air electrodes made of 50/50 vol% of the resulting LSM powders and yttria stabilized zirconia(YSZ) powders were prepared by colloidal deposition technique. The electrodes were studied by ac impedance spectroscopy in order to improve the performance of a solid oxide fuel cell(SOFC). Reproducible impedance spectra were confirmed using the improved cell, which consisted of LSM-YSZ/YSZ. The composite electrode of LSM and YSZ was found to yield a lower cathodic resistivity than that of the non-composite one. Also, the addition of YSZ to the La1-xSrxMnO3 (0.1 ≤ x ≤ 0.2) electrode led to a pronounced, large decrease in the cathodic resistivity of the LSM-YSZ composite electrodes.