Chūō-ku, Japan
Chūō-ku, Japan

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Watanuki K.,Tohoku University | Inokuchi A.,Tohoku University | Banba A.,Tohoku University | Banba A.,Ube Nitto Kasei Co. | And 10 more authors.
Japanese Journal of Applied Physics | Year: 2010

High-quality SiO2 film formation is important for many applications, such as large-scale integration (LSI) circuit and micro-electro-mechanical system (MEMS) industries. We evaluated the structural and electrical insulation properties of SiO2 films using an organosiloxane-based silica solgel precursor derived from a mixture of tetraethoxysilane (TEOS) and methyltrimethoxysilane (MTMS) by changing the molar ratio of TEOS/ MTMS. This sol-gel precursor was converted not only to a low-dielectric-constant film with a relative dielectric constant of 2.8 but also to a dense SiO2 film by optimizing baking conditions. The dense SiO2 film from this sol-gel precursor has excellent dielectric characteristics of low leakage current density and high breakdown voltage, whose values are comparable to those of thermal oxide SiO2 films. Furthermore, the breakdown field intensity of these films was improved by adding a small amount of metal oxides, such as TiO2, HfO2, and ZrO2. A maximum breakdown field intensity of 15 MV/cm can be achieved in the case of 10% TiO2 addition. © 2010 The Japan Society of Applied Physics.


Patent
Tohoku University, Tokyo Electron, Ube Industries and UBE Nitto Kasei Co. | Date: 2010-05-12

In manufacturing processes of a semiconductor device including a shallow trench element isolation region and an interlayer insulating film of a multilayer structure, it is necessary to repeatedly use CMP, but since the CMP itself is costly, the repeated use of the CMP is a cause to increase the manufacturing cost. As an insulating film for use in a shallow trench (ST) element isolation region and/or a lowermost-layer interlayer insulating film, use is made of an insulating coating film that can be coated by spin coating. The insulating coating film has a composition expressed by ((CH_(3))_(n)SiO_(2-n/2))_(x)(SiO_(2))_(1-x) (where n=1 to 3 and 0x1.0) and a film with a different relative permittivity k is formed by selecting heat treatment conditions. The STI element isolation region can be formed by modifying the insulating coating film completely to a SiO_(2) film, while the interlayer insulating film with a small relative permittivity k can be formed by converting it to a state not completely modified.


Patent
Tohoku University, Tokyo Electron, Ube Industries and UBE Nitto Kasei Co. | Date: 2010-05-12

An insulative coat film comprising one or two or more kinds of oxides having a dielectric constant (k) of 2.5 or smaller and expressed by a general formula of ((CH_(3))_(n)SiO_(2-n/2))_(x)(SiO_(2))_(1-x) (where n=1 to 3, x1) is used to form an interlayer insulation film. The insulative coat film applied by spin-coating is flat without reflecting underlying unevenness, and the heat-treated film has surface roughness of 1 nm or less in Ra and 20 nm or less in a P-V value. The interlayer insulation film containing the insulative coat film can have a wiring structure and an electrode formed only by etching without need of a CMP process.


Patent
Ube Nitto Kasei Co. and Ube Industries | Date: 2010-09-09

A method for producing a flexible metal laminate includes continuously thermocompression-bonding laminate metal foils to a resin film. The thermocompression-bonding step is conducted by placing a protection metal foil between a pressure surface of a heat and pressure forming apparatus and the laminate metal foils. When the protection metal foil is subjected to an abrasion resistance test, in which the protection metal foil is placed such that a matte surface of the protection metal foil contacts a plate material having a surface equivalent to the pressure surface and in which the matte surface is rubbed against the surface of the plate material by applying a load to a shiny surface of the protection metal foil and pulling the protection metal foil, a streak is found on the matte surface only in a case where the load is over 500 g per area of 76 mm26 mm.


Nabemoto K.,University of Miyazaki | Sakurada Y.,University of Miyazaki | Ota Y.,University of Miyazaki | Takami K.,Ube Nitto Kasei Co. | And 4 more authors.
Japanese Journal of Applied Physics | Year: 2012

An anti-soiling layer was coated on a poly(methyl methacrylate) (PMMA) substrate. The anti-soiling layer was prepared by coating the acrylic urethane capping layer, the inorganic/organic nano-graded intermediate layer, and the photocatalytic surface layer including modified WO 3 and partial hydrolyzed tetraethyl orthosilicate. The layers were coated by spin-coat method. The photocurrent from each subcell of the InGaP/InGaAs/ Ge triple-junction solar cell can be calculated by multiplying the solar spectrum of AM1.5D (850W/m 2), the transmittance of the PMMA substrate, and the spectral response of the triple-junction solar cell. After 8 months exposure, the reduction rate of photocurrent of the sample without antisoiling coat was 9.6%. On the other hand, that with anti-soiling coat could be suppressed to 3.3%. © 2012 The Japan Society of Applied Physics.


Nishioka K.,University of Miyazaki | Nabemoto K.,University of Miyazaki | Sakurada Y.,University of Miyazaki | Ota Y.,University of Miyazaki | And 3 more authors.
Conference Record of the IEEE Photovoltaic Specialists Conference | Year: 2011

An anti-soiling layer was coated on the PMMA substrates. The anti-soiling layer was prepared by coating the inorganic/organic nano-graded intermediate layer (Ube-Nitto Kasei Co., Ltd.) and photocatalytic surface layer including modified WO 3 (ILUMIO®, Sumitomo Chemical Co., Ltd.) and partial hydrolyzed tetraethylorthosilicate (Wako Pure Chemical Industries, Ltd.). After 6 months, the reduction rate of photocurrent without anti-soiling coat was 7.5%. On the other hand, that with anti-soiling coat could be suppressed to 3%. The experimental environment of the exposure site is clean, and there is a lot of rainfall. It is considered that the effect of the anti-soiling coat must be more significant if CPV systems are installed in dusty areas. © 2011 IEEE.


A photocatalyst film of which at least one main surface contains photo-semiconductor particles, said main surface being a surface that becomes hydrophilic by irradiation with light, wherein the hydrophilization speed thereof when it is irradiated with light having a half-value width of 15 nm or less after kept in a dark place is less than 2 (l/deg/min/10^(5)) in an irradiated-light wavelength region of 370 nm or more and is 2 (l/deg/min/10^(5)) or more at least partly in an irradiated-light wavelength region of 300 to 360 nm.

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