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Sedgefield, United Kingdom

U2T Photonics UK Ltd | Date: 2013-11-25

A method of manufacture of an optical waveguide structure including the steps of: providing a multilayer semiconductor wafer including a III-V semiconductor substrate, a III-V semiconductor top layer and an etch stop layer sandwiched therebetween, the etch stop layer including aluminium and phosphorous; and etching through the top layer to the etch stop layer by use of a dry etch containing chlorine to provide two spaced apart recesses defining the optical waveguide therebetween.

U2T PHOTONICS UK Ltd | Date: 2012-09-20

An optical IQ modulator (

Schindler P.C.,Karlsruhe Institute of Technology | Korn D.,Karlsruhe Institute of Technology | Stamatiadis C.,TU Berlin | Okeefe M.F.,u2t Photonics UK Ltd. | And 16 more authors.
Journal of Lightwave Technology | Year: 2014

We report on the experimental demonstration of a GaAs IQ modulator. The device consists of two 'nested' Mach-Zehnder modulators for the inphase and quadrature component and is operated at a symbol rate of 25 GBd. Using QPSK, 16QAM, 32QAM and 64QAM, data rates of up to 150 Gbit/s were encoded on a single carrier in one polarization. The individual Mach-Zehnder modulators, and hence, the IQ-modulator have an electro-optic 3 dB bandwidth of 27 GHz and a 6 dB bandwidth larger than 35 GHz. The extinction ratio of the Mach-Zehnder exceeds 20 dB. The devices exhibit small footprint of 2 mm × 40 mm and can be integrated on large-area GaAs wafers using high-yield fabrication processes while providing performance similar to established lithium niobate devices. © 1983-2012 IEEE. Source

Kroh M.,Ihp Microelectronics | O'Keefe M.,u2t Photonics UK Ltd. | Voigt K.,TU Berlin | Fedderwitz S.,u2t Photonics AG | And 18 more authors.
International Conference on Transparent Optical Networks | Year: 2013

The introduction of advanced optical modulation formats for coherent data transmission and multilevel signalling enlarges the transmission capacities but also requires more complex opto-electronic components. The need for cost efficient compact solutions is the main driver for photonic-electronic integration technologies. In the framework of the European Project GALACTICO a new mixed technology platform for advanced transceivers is being developed. The technology relies on the cost efficient Germanium-on-Silicon technology, and SiGe BiCMOS technology together with GaAs technology [1]. A selection of the best suited materials and solutions ready to deploy is made to provide the performance required for transmitter and receiver of next generation networks operated at capacities beyond Terabit/s. © 2013 IEEE. Source

Korn D.,Karlsruhe Institute of Technology | Schindler P.C.,Karlsruhe Institute of Technology | Stamatiadis C.,TU Berlin | O'Keefe M.F.,u2t Photonics UK Ltd. | And 15 more authors.
National Fiber Optic Engineers Conference, NFOEC 2013 | Year: 2013

We report on the first experimental demonstration of a GaAs IQ-modulator. Data rates of up to 150 Gbit/s are generated using QPSK, 16-QAM, 32-QAM and 64-QAM on a single carrier and polarization. © 2013 OSA. Source

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