Sedgefield, United Kingdom
Sedgefield, United Kingdom

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Schindler P.C.,Karlsruhe Institute of Technology | Korn D.,Karlsruhe Institute of Technology | Stamatiadis C.,TU Berlin | Okeefe M.F.,U2t Photonics U.K. Ltd. | And 16 more authors.
Journal of Lightwave Technology | Year: 2014

We report on the experimental demonstration of a GaAs IQ modulator. The device consists of two 'nested' Mach-Zehnder modulators for the inphase and quadrature component and is operated at a symbol rate of 25 GBd. Using QPSK, 16QAM, 32QAM and 64QAM, data rates of up to 150 Gbit/s were encoded on a single carrier in one polarization. The individual Mach-Zehnder modulators, and hence, the IQ-modulator have an electro-optic 3 dB bandwidth of 27 GHz and a 6 dB bandwidth larger than 35 GHz. The extinction ratio of the Mach-Zehnder exceeds 20 dB. The devices exhibit small footprint of 2 mm × 40 mm and can be integrated on large-area GaAs wafers using high-yield fabrication processes while providing performance similar to established lithium niobate devices. © 1983-2012 IEEE.

Stampoulidis L.,Constelex Technology Enablers Ltd | O'Keefe M.F.,U2t Photonics Uk Ltd | Giacoumidis E.,Athens Information Technology | Walker R.G.,U2t Photonics Uk Ltd | And 5 more authors.
Optical Fiber Communication Conference, OFC 2013 | Year: 2013

We present fabrication of the first GaAs electro-optic IQ modulator arrays for high capacity optical transport. Modulators demonstrate >35 GHz bandwidth with 3V Vp. The applicability study reveals suitability for 440Gb/s OOFDM over 1000 km. © 2013 OSA.

Agency: Cordis | Branch: FP7 | Program: CP-FP | Phase: SPA.2013.3.1-01 | Award Amount: 2.63M | Year: 2013

Telecom satellites are growing like giants employing multiple beams to provide high speed connectivity and broad coverage. Under exploding capacity requirements, vendors admit that a technology and payload architecture switch is mandatory. The new technology has to deliver practical, low-power and scalable components with high performance under harsh environment conditions. BEACON aims to provide this technology and disrupt the transition to multibeam Tb/s satellites. Addressing cost, performance and volume, BEACON invests on the right mix of 3 photonic technologies used in terrestrial telecommunications, i.e. GaAs, Si and doped fibres and combines them to deliver a compact optical beam-forming technology delivering the massive amount of bandwidth. BEACON develops ultra-linear GaAs Mach-Zehnder Modulators (MZM) exhibiting >75dB spurious free dynamic range, 15dB higher than conventional MZMs. MZMs will exhibit: up to 35GHz frequency operation matching Ka-band frequency plans and 1/2 the size of mainstream LiNbO3 MZMs. 6 GaAs wafers enable high volume production. BEACON integrates and co-packages 4xMZM arrays with new packaging method. BEACON develops the first scalable multi-core rad-hard erbium doped optical fibre amplifier (EDFA). The EDFA employs new rad-hard doped microstructured fibre and enabling: >50% electrical power consumption reduction than using conventional EDFAs and small form factor packaging. BEACON integrates an innovative photonic beamformer (BFN) using CMOS compatible silicon photonic fabrication together with Ge diodes. The BFN chip consumes <7.5-times less chip area than low-index contrast BFNs. It allows 4 orders of magnitude faster beamsteering. BEACON integrates the system with BFN control and antenna array to demonstrate that the technology can scale to Tb/s capacities with considerable savings in size/power against current kW consuming systems. Component space assessment will guide the technology towards fully space qualified systems.

Idler W.,Alcatel - Lucent | Buchali F.,Alcatel - Lucent | Schuh K.,Alcatel - Lucent | Cameron N.,u2t Photonics UK Ltd. | And 3 more authors.
Optical Fiber Communication Conference, OFC 2014 | Year: 2014

A 1 Tb/s option is demonstrated with 4 subcarriers on the 50 GHz grid, modulated with 43GBd PM-16QAM using a 40 Gb/s GaAs I/Q modulator module. 6dB of OSNR margins are obtained with transmission over 480km SMF. © OSA 2014.

Idler W.,Alcatel - Lucent | Buchali F.,Alcatel - Lucent | Schuh K.,Alcatel - Lucent | Cameron N.,U2t Photonics UK Ltd. | And 3 more authors.
Conference on Optical Fiber Communication, Technical Digest Series | Year: 2014

A 1 Tb/s option is demonstrated with 4 subcarriers on the 50 GHz grid, modulated with 43GBd PM-16QAM using a 40 Gb/s GaAs I/Q modulator module. 6dB of OSNR margins are obtained with transmission over 480km SMF. © 2014 OSA.

Walker R.G.,U2t Photonics UK Ltd. | Cameron N.I.,U2t Photonics UK Ltd. | Zhou Y.,U2t Photonics UK Ltd. | Clements S.J.,U2t Photonics UK Ltd.
IEEE Journal on Selected Topics in Quantum Electronics | Year: 2013

We review the guided-wave subcomponents required in the design of high-functionality modulators for advanced modulation formats using the GaAs/AlGaAs material system. In these complex devices, small loss contributions rapidly accumulate unless the substructures are well optimized, not only for low loss but also for process tolerance. Results for an advanced 40-Gb/s DQPSK modulator are presented. © 2013 IEEE.

An electro-optic waveguide polarisation modulator comprisingfirst and second spaced apart cladding layers;a waveguide core sandwiched between the first and second cladding layers, the waveguide core having a higher refractive index than the cladding layers;a plurality of primary electrodes arranged on the opposite side of the first cladding layer to the core; and,at least one secondary electrode arranged on the opposite side of the second cladding layer to the core;the electrodes being arranged to provide an electric field having field components in two substantially perpendicular directions within the waveguide core so as to modulate the refractive index thereof such that electromagnetic radiation propagating through the core is converted from a first polarisation state to a second polarisation state;characterised in thatthe modulator further comprises at least one grading layer sandwiched between at least one of the first and second cladding layers and the core, the grading layer having an effective refractive index intermediate between that of the waveguide core and the cladding layer.

U2T PHOTONICS UK Ltd | Date: 2012-09-20

An optical IQ modulator (10) comprisinga modulator input port (11);a modulator output port (12);a plurality of optical branches (13) connected in parallel therebetween;each optical branch (13) comprising an optical interferometer (1), each optical interferometer (1) comprisingan optical splitter (2);an optical combiner (3); and,a plurality of optical paths (4) connected therebetween:at least one electrode (7) arranged in close proximity to an optical path (4) for altering the phase of an optical signal passing along the path (4);the optical splitter (2) being in being in optical communication with the modulator input port (11) and being adapted to split light received from the modulator input port (11) into the plurality of optical paths (4);the optical combiner (3) having an optical output port (5) in optical communication with the modulator output port (12), the optical combiner (3) being adapted to combine the optical signals from the plurality of optical paths (4) at the output port (5);at least one optical interferometer (1) comprising an optical tap (8) adapted to receive and combine the optical signals from the plurality of optical paths (4) in a different phase relation to the combination at the output port (5) of the interferometer combiner (3).

Agency: Cordis | Branch: FP7 | Program: CP | Phase: ICT-2013.3.2 | Award Amount: 4.36M | Year: 2013

IPHOBAC-NG addresses application-specific lasers, optical modulators and detectors to construct novel photonic millimeter-wave radios (PMWR) providing a) complementary broadband 1-10 Gb/s wireless access and b) 3 Gb/s mobile backhaul; both being seamlessly integrated in next generation optical access (NGOA) networks based upon a WDM-PON infrastructure. The proposed PMWR will employ novel radio access units (RAU) featuring direct optic-to-wireless and wireless-to-optic conversion. The consortium will realize these functions for enabling a seamless interfacing of the wireless domain with the optical network infrastructure. IPHOBAC-NG will achieve its challenging targets by developing the following application-specific integrated photonic components:a) Integrated coherent heterodyne 70/80 GHz photoreceivers (Pout>3 dBm, S>0.5 A/W) b) Low-linewidth (100 kHz) frequency-agile (>3 nm) wavelength tunable lasersc) High-frequency (70/80 GHz), high-efficient (>0.5 A/W), high-power (>\3 dBm) photodiodesd) High-frequency (70/80 GHz), high output power (>\17 dBm) amplifier The proposed components and RAU concept will allow seamless integration of the radio head-ends into WDM and even ultra-dense WDM PON access networks because it will exploit the following:a) coherent detection to enable high sensitivity, dense WDM, and direct wireless-to-optic conversion with practically no latencies b) electronic signal processing to be centralized in the OLT to mitigate for distortions due to cost optimized components and to allow for spectrally efficient modulation formats; avoiding DSPs in the RAU for energy-efficiency and cost reasonsc) photonic integrated circuits to bring the relatively complex optics into a cost position suitable for the access market. If successful, IPHOBAC-NG will reinforce European industrial leadership, competitiveness and market share especially in fields of photonic components, photonic integration, as well as in optical and wireless communications

U2T Photonics UK Ltd | Date: 2013-11-25

A method of manufacture of an optical waveguide structure including the steps of: providing a multilayer semiconductor wafer including a III-V semiconductor substrate, a III-V semiconductor top layer and an etch stop layer sandwiched therebetween, the etch stop layer including aluminium and phosphorous; and etching through the top layer to the etch stop layer by use of a dry etch containing chlorine to provide two spaced apart recesses defining the optical waveguide therebetween.

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