Osokin V.A.,Tsentr Elektrokontakt Company |
Panibratskii V.A.,Gelii Research Institute |
Shpak P.A.,Tsentr Elektrokontakt Company |
Piyuk E.L.,Tsentr Elektrokontakt Company
Metallurgist | Year: 2011
A study of the structure of high purity polycrystalline silicon, prepared by electron beam refining of metallurgical-grade silicon in a vacuum is provided. Results of the study point to sensitivity of impurity particle growth and dimensions to metallurgical-grade silicon refining method (vacuum or oxidation), in contrast to crystallite dimensions. There is also almost total absence of impurity segregation towards grain boundaries during silicon crystallization from a melt. © 2011 Springer Science+Business Media, Inc.