Châteauneuf-Grasse, France
Châteauneuf-Grasse, France

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This vision of MEMS whereby microsensors, microactuators and microelectronics and other technologies, can be integrated onto a single microchip is expected to be one of the most important technological breakthroughs of the future. A significant portion of MEMS manufacturing technology has come from the IC industry. MEMS devices can be made using silicon wafers and the manufacturing process can incorporates semiconductor manufacturing processes such as sputtering, deposition, etching and lithography. This report analyzes the market for MEMS by devices and systems. The equipment and materials to make them are analyzed and forecast. Chapter 2 Forecast Of The Key Applications And Markets 2.1 MEMS Device Market Forecast 2.2 MEMS System Market Forecast - Advanced Microsensors - Agiltron - Asia Pacific Microsystems - Beijing First MEMS - Bosch - C2V - China Resources Semiconductor - Colibrys - Dai-Nippon Printing - Dalso - Freescale - Honeywell MEMSplus - Infineon Technologies SensoNor As - Innovative Micro Tech - Institute of Microelectronics - Integrated Sensing Systems Inc. (ISSYS) - LioniX - MEMS Engineering and Material - Micralayne - Micrel - Midwest MicroDevices, LLC - Nanostructures Inc - Norcada Inc. - Olympus - Omron - Proton Mikrotechnik - ST Microelectronics - Semiconductor Manufacturing International Corporation - Silex Microsystems - Sony - Taiwan Semiconductor Manufacturing Co Ltd (TSMC) - Texas Instruments - Touch Microsystems - Tronics Microsystems - X-Fab For more information about this report visit To view the original version on PR Newswire, visit:

Peshekhonov V.G.,Concern CSRI Elektropribor | Nekrasov Ya.A.,Concern CSRI Elektropribor | Pfluger P.,Tronics Microsystems | Kergueris C.,Tronics Microsystems | And 2 more authors.
17th Saint Petersburg International Conference on Integrated Navigation Systems, ICINS 2010 - Proceedings | Year: 2010

A micromechanical RR-type gyro, modifications of uncased micromechanical sensing elements and ASIC for the gyro are presented. The results of the tests of the sensing elements with an ASIC prototype on the FPGA are submitted.

Siviero F.,SAES Getters S.p.A. | Bonucci A.,SAES Getters S.p.A. | Conte A.,SAES Getters S.p.A. | Moraja M.,SAES Getters S.p.A. | And 2 more authors.
Proceedings of SPIE - The International Society for Optical Engineering | Year: 2012

Thin-film getter integration is one of the key technologies enabling the development of a wide class of MEMS devices, such as IR microbolometers and inertial sensors, where stringent vacuum requirements must be satisfied to achieve the desired performances and preserve them for the entire lifetime. Despite its importance, the question about lifetime prediction is still very difficult to answer in a reliable way. Here we present an experimental approach to the evaluation of lifetime, based on an accelerated life test performed varying both the storage conditions and the getter area. A test vehicle based on a resonator device was used. The hermeticity was evaluated by means of specific leak testing, while MEMS behavior during the ageing test was studied monitoring device functional parameters and by residual gas analysis (RGA). Unexpected results were observed leading to the discovery that methane is pumped by the getter below 100°C. These results served as the inputs of a suitable model allowing extrapolating the device lifetime in operating? conditions, and pointed out that RGA is an essential tool to correctly interpret the aging tests. © 2012 SPIE.

Ortiz P.,Northumbria University | Ortiz P.,Oxford Nanopore Technologies | Burnett R.,Northumbria University | Keegan N.,Northumbria University | And 7 more authors.
Journal of Micromechanics and Microengineering | Year: 2012

This work reports on the development of a lab demonstrated resonant mass sensor towards mid-size production. The issues associated with scaling-up production of the microfabricated chip are discussed with particular focus on yield and device reproducibility, as well as the constraints imposed on the design and manufacturing of the device when packaging and integration must be taken into account. Issues of modal alignment and ambient operational pressure are discussed. Fabricated devices show a 4.81Hz pg1mass sensitivity with a temperature sensitivity of typically 10Hz °C1. © 2012 IOP Publishing Ltd.

Tronics Microsystems | Date: 2013-03-21

Electronic components, in particular microsystems, microcomponents, MEMS (micro-electro-mechanical systems), microsensors, in particular, inertial MEMS sensors such as accelerometers, gyroscopes and seismic transducers, microswitches, RF MEMS and RF circuits, microfluidic components, biological MEMS, optical MEMS; electronic circuitry associated with all these components. Services for the design and development of electronic components; services for design, engineering, research and development, process development and consulting in the field of electronic components in particular microsystems, microcomponents, MEMS (micro-electro-mechanical systems), microsensors, in particular, inertial MEMS sensors such as accelerometers, gyroscopes and seismic transducers, microswitches, RF MEMS and RF circuits, microfluidic components, biological MEMS, optical MEMS and electronic circuitry associated with all these components.

Tronics Microsystems | Date: 2015-09-08

Gyroscopes, gyrometers, accelerometers, inertial navigation systems comprising solid-state gyroscopes and accelerometers, electronic sensors in the nature of MEMS sensors.


Tronics Microsystems | Date: 2016-03-22

Accelerometers, inertial plants comprising solid-state gyroscopes and accelerometers, electronic sensors in the form of MEMS sensors.

Hu Z.,Northumbria University | Hedley J.,Northumbria University | Keegan N.,Northumbria University | Spoors J.,Northumbria University | And 5 more authors.
Journal of Micromechanics and Microengineering | Year: 2013

This work reports on the design, fabrication and characterization of a piezoelectrically actuated mass sensor. The sensor utilizes degenerate resonant modes in which one mode is used as a reference to compensate for environmental effects. The project builds on a capacitively driven version of the sensor allowing improvements and challenges surrounding the new design to be assessed in relation to modeling and fabrication. The operational mode of interest showed an average resonant frequency of 7.8 MHz (quality factor of 490), at atmospheric pressure with an electrically recovered signal to noise ratio of 2400:1. The lead zirconate titanate performance yielded a central displacement sensitivity of 1.50 nm V-1, which is in good agreement with the levels predicted in modeling. A small initial split in the degenerate modes was recorded due to fabrication tolerances; however, the devices still exhibited good environmental stability, with a temperature sensitivity of only 11 Hz °C-1. Electroplating of gold onto the sensor surface demonstrated a device mass sensitivity of 12.0 Hz pg-1. © 2013 IOP Publishing Ltd. Printed in the UK & the USA.

Tronics Microsystems | Date: 2010-07-05

Device for measuring pressure through the capacitive effect between two electrodes including at least one sensitive electrode spaced apart from and opposite a stationary electrode so as to define a cavity in which a reference pressure (Pref) exists. The device in accordance with the invention further includes a protective housing for insulating at least the stationary electrode from the ambient environment in which the pressure to be measured exists, the housing having at least one solid portion forming a recess for containing at least the stationary electrode, and a thinned portion forming the sensitive electrode.

Tronics Microsystems | Date: 2012-02-02

An inertial sensor including at least one measurement beam and one active body formed of a proof body and of deformable plates, said active body being maintained in suspension inside of a tight enclosure via its plates, the measurement beam connecting a portion of the proof body to an internal wall of said enclosure, said measurement beam having a lower thickness than the proof body.

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