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Sadofyev Y.G.,Trion Technology | Samal N.,Trion Technology | Andreev B.A.,RAS Institute for Physics of Microstructures | Gavrilenko V.I.,RAS Institute for Physics of Microstructures | And 3 more authors.
Semiconductors | Year: 2010

Optimum conditions for the growth of the GaAs1 - xSbx/GaAs heterostructures by the method of molecular-bean epitaxy are determined; it is shown that effective long-wavelength photoluminescence at T = 300 K can be obtained at wavelengths as long as λ = 1. 3 μm by increasing the antimony incorporation. As the excitation power is increased, the appearance of a short-wavelength line (in addition to a shift of a photoluminescence maximum to shorter wavelengths characteristic of the type II heterojunctions) related to direct optical transitions in the real space takes place; this relation is confirmed by the results of studying the photoluminescence spectra with subpicosecond and nanosecond time resolution in the case of pulsed excitation. © 2010 Pleiades Publishing, Ltd.


Morozov S.V.,RAS Institute for Physics of Microstructures | Kryzhkov D.I.,RAS Institute for Physics of Microstructures | Yablonsky A.N.,RAS Institute for Physics of Microstructures | Antonov A.V.,RAS Institute for Physics of Microstructures | And 6 more authors.
Journal of Applied Physics | Year: 2013

We present the experimental results of time-resolved photoluminescence spectroscopy in type II GaAs/GaAs0.64Sb0.36 quantum well heterostructures. At moderate optical excitation densities (below 103 W/cm2), we observe blue shift of the photoluminescence peak with increasing pump power which results from band bending at the type II heterointerface due to photo-excited charge carriers. With further increase in the excitation density, the observed peak undergoes red shift accompanied by significant drop in the luminescence decay time (from 10 ns to 1 ns) which is caused by extreme band bending and increasing contribution of type I radiative transitions to the photoluminescence signal. © 2013 AIP Publishing LLC.


Ikonnikov A.V.,RAS Institute for Physics of Microstructures | Lastovkin A.A.,RAS Institute for Physics of Microstructures | Spirin K.E.,RAS Institute for Physics of Microstructures | Zholudev M.S.,RAS Institute for Physics of Microstructures | And 9 more authors.
JETP Letters | Year: 2010

The energy spectra of quantum-well narrow-bandgap Hg1 - yCdyTe/CdxHg1 - xTe heterostructures have been studied. The dependences of the effective cyclotron mass on the density (in classical magnetic fields) and the transition energy (in quantizing fields) have been obtained from the cyclotron resonance measurements. These dependences confirm the near-linear dispersion law for the electrons with small mass at the band bottom (the minimum cyclotron mass measured is 0.003 m0). The interband photoconductivity of the CdHgTe-based structures with the long-wavelength photoresponse edge lower than 6 meV has been demonstrated. © 2010 Pleiades Publishing, Ltd.


Ushakov D.V.,Belarussian State University | Sadofyev Y.G.,RAS Lebedev Physical Institute | Samal N.,Trion Technology
Semiconductors | Year: 2012

Two mechanisms for achieving lower terahertz-range frequencies in quantum-cascade structures with two quantum wells based on GaAs/AlGaAs compounds are proposed. The first mechanism is based on the introduction of composite quantum wells consisting of a narrow (~2 nm) quantum well with a low potential barrier, being within the main wide quantum well. The second mechanism is based on barriers with unequal heights, arranged in front of and behind the composite quantum well. Optimized quantum-cascade laser structures emitting in the regions of ~2. 15 and ~1. 35 THz are calculated. © 2012 Pleiades Publishing, Ltd.


Samal N.,Trion Technology | Sadofyev Y.G.,Trion Technology | Annamalai S.,Trion Technology | Chen L.,Trion Technology | And 2 more authors.
Journal of Crystal Growth | Year: 2011

We present an approach of uniformly changing the barrier height of AlGaAs in GaAs/AlGaAs based Terahertz (THz) quantum cascade laser structures for tuning the emission wavelengths. By uniformly changing the aluminum content of all the barriers from 15.5% to 13.5% in a set of 5 MBE-grown samples emission wavelengths from ∼70 to 67.5 μm, in nearly equal steps, are realized. © 2010 Elsevier B.V. All rights reserved.


Sadofyev Y.G.,Trion Technology | Samal N.,Trion Technology
Materials | Year: 2010

An in-depth optimization of growth conditions and investigation of optical properties including discussions on band alignment of GaAsSb/GaAs quantum well (QW) on GaAs by molecular beam epitaxy (MBE) are reported. Optimal MBE growth temperature of GaAsSb QW is found to be 470 ± 10 °C. GaAsSb/GaAs QW with Sb content ~0.36 has a weak type-II band alignment with valence band offset ratio QV ~1.06. A full width at half maximum (FWHM) of ~60 meV in room temperature (RT) photoluminescence (PL) indicates fluctuation in electrostatic potential to be less than 20 meV. Samples grown under optimal conditions do not exhibit any blue shift of peak in RT PL spectra under varying excitation © 2010 by the authors.


PubMed | Trion Technology
Type: Journal Article | Journal: Journal of clinical oncology : official journal of the American Society of Clinical Oncology | Year: 2016

726 Introduction: This phase-I study prospectively analysed the efficacy and toxicity of HDCT, HPSCT and subsequent immunotherapy with T-cell reinfusion in chemotherapy-sensitive patients with MBC.After leukapheresis and cryopreservation of T-cells, patients received 2 cycles of standard chemotherapy ET (epirubicin/paclitaxel) and 1 cycle of EI (epirubicin/ifosfamide) followed by G-CSF and stem cell harvest. After a third cycle of ET, responders (CR/PR) underwent HDCT (thiotepa 600 mg/mThirty-three patients were recruited on study, and nineteen pts who had responded to initial standard chemotherapy (4 CR, 15 PR, OR = 58%) underwent HDCT and HPSCT. Subsequently, another 6 patients achieved a CR after HDCT resulting in an overall CR rate of 10/33 pts (30%). Two early deaths were observed (one toxic, one PD). T-cell reinfusion and bispecific antibodies were given to 17 patients. The main side effects during HDCT were severe (grade 3 / 4) hematotoxicity, mucositis, gastrointestinal toxicity. Elevated liver enzymes (grade 2 / 3) were seen in all patients. The intravenous application of bispecific antibodies resulted in intermittent fever and chills. Within a follow-up period of 54.7 to 79.1 months, all patients relapsed, and two patients are still alive. The median progression-free survival was 10.6 months (range: 2.1-31.2) and the median overall survival was 22.7 months (range: 1.8-79.1+).Despite a high complete remission rate and despite a novel immunotherapeutic approach including bispecific antibodies and T-cell reinfusion, HDCT and subsequent HPSCT failed to induce a major improvement of survival in chemosensitive patients with metastatic breast cancer. No significant financial relationships to disclose.


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