Tri Chemical Laboratories Inc.

Uenohara, Japan

Tri Chemical Laboratories Inc.

Uenohara, Japan
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Kobayashi C.,Renesas Electronics Corporation | Miura Y.,Renesas Electronics Corporation | Nagano S.,Taiyo Nippon Sanso | Ohto K.,Renesas Electronics Corporation | And 5 more authors.
Advanced Metallization Conference (AMC) | Year: 2010

A SiC film by using DiBDMS has been developed as a Cu barrier Low-k film for 28 nm-node devices and beyond. Using this technique, both low k value (k<3.5) and high hermeticity were obtained. From various analyses, the mechanism of both low-k value and high hermeticity is proposed.


Patent
Renesas Electronics Corporation, Taiyo Nippon Sanso and Tri Chemical Laboratories Inc. | Date: 2011-09-28

A semiconductor device according to the invention includes a first Cu interconnect and a first barrier insulating film. a The first barrier insulating film is provided on the first Cu interconnect, and prevents Cu from being diffused from the first Cu interconnect. In addition, the semiconductor device includes a second Cu interconnect and a second barrier insulating film on the first barrier insulating film. The second barrier insulating film is provided on a first Cu interconnect, and prevents Cu from being diffused from the second Cu interconnect. The first and second barrier insulating films are made of a silicon-based insulating film having a branched alkyl group and a carbon-carbon double bond.


Shimizu H.,Taiyo Nippon Sanso | Shimizu H.,University of Tokyo | Tajima N.,Japan National Institute of Materials Science | Kada T.,Tri Chemical Laboratories Inc. | And 2 more authors.
Japanese Journal of Applied Physics | Year: 2011

To form SiCH films with high carbon content using plasma-enhanced chemical vapor deposition (PECVD), 1,1-divinylsilacyclopentane (DVScP) and 5-silaspiro[4,4]nonane (SSN) were designed as novel precursors for the low-k cap layer and Cu diffusion barrier at the top of Cu lines. We elucidated the relationship between the structure of low-k SiCH films made from these newly developed precursors and their barrier properties against copper and oxygen diffusion. We also studied the relationship between the structure of SiCH and the deposition process under various RF plasma powers. A Monte Carlo simulation was employed to estimate the deposition profile using an overhang test structure. Fourier transform infrared (FT-IR) spectroscopy was used to analyze the molecular structures. Our novel silacyclopentanes formed SiCH films with high carbon content and good barrier properties at high RF powers due to the specific reactions of silacyclopentanes designed according to our quantum chemical calculations. Precursor design is thus an important factor in forming SiCH with high carbon content that achieves both lower k and good barrier properties. © 2011 The Japan Society of Applied Physics.


Shimizu H.,Taiyo Nippon Sanso | Shimizu H.,University of Tokyo | Tajima N.,Japan National Institute of Materials Science | Kada T.,Tri Chemical Laboratories Inc. | And 2 more authors.
Japanese Journal of Applied Physics | Year: 2011

To form SiCH films with a high carbon content using plasma-enhanced chemical vapor deposition (CVD), isobutyl trimethylsilane (iBTMS) and diisobutyl dimethylsilane (DiBDMS) were examined as precursors for a low-k cap layer and Cu diffusion barrier at the top of Cu lines. We elucidated the relationship between the structure of low-k SiCH films made from these newly developed precursors and their barrier properties against copper and oxygen diffusion. We also studied the relationship between the structure of SiCH and the deposition process under various RF plasma powers. A Monte Carlo simulation was employed to estimate the deposition profile in an overhang test structure. Fourier transform infrared spectroscopy (FT-IR) was used to analyze molecular structures. Our studies indicate that deposition conditions cannot dictate carbon content, but can control porosity/density. Precursor selection is thus an important factor in forming SiCH with a high carbon content that achieves both lower k and good barrier properties. © 2011 TheJapan Society of Applied Physics.


Shimizu H.,Taiyo Nippon Sanso | Tajima N.,Taiyo Nippon Sanso | Tajima N.,Japan National Institute of Materials Science | Kada T.,Taiyo Nippon Sanso | And 4 more authors.
Japanese Journal of Applied Physics | Year: 2010

SiCH films are a potentially very useful low-k cap layer for covering Cu trenches in ultralarge-scale integration (ULSI) devices. To induce Si-C 2H4-Si networks in SiCH film structures, 1, 1-divinyl silacyclopentane (DVScP) and 5-silaspiro-[4, 4]-nonane (SSN) were designed and prepared. Isobutyl trimethyl silane (iBTMS) and diisobutyl dimethyl silane (DiBDMS) were also designed to form Si-CH2-Si networks in the SiCH molecular structure. SiCH films were formed by plasma-enhanced chemical vapor deposition (PECVD), for use as a low-k cap layer and a Cu diffusion barrier on top of the Cu trenches. We demonstrated additional Si-C2H 4-Si networks that can effectively suppress Cu diffusion in SiCH low-k barrier films with a reduced k-value of 3.1. © 2010 The Japan Society of Applied Physics.


Ohashi Y.,Taiyo Nippon Sanso | Tajima N.,Taiyo Nippon Sanso | Tajima N.,Japan National Institute of Materials Science | Xu Y.,Taiyo Nippon Sanso | And 6 more authors.
Japanese Journal of Applied Physics | Year: 2010

We propose new precursors for bulk low-k films with plasma damage resistance. Our newly designed precursors contain long-chain hydrocarbon groups such as i-butyl and n-propyl groups. Using these precursors, we successfully produced films containing Si-CH2-Si groups by plasmaenhanced chemical vapor deposition (PECVD). The plasma damage resistance of these films under NH3 plasma treatment was studied. It was found that the increase in the k-value (Δk) is smaller in films with more Si-CH2-Si groups. © 2010 The Japan Society of Applied Physics.


Patent
TRI Chemical Laboratories Inc. and JSR Corporation | Date: 2011-10-24

A method for producing ruthenium compound including the step of reacting a compound represented by General Formula (1): RuL^(0)_(2 )(wherein L^(0 )represents an unsaturated hydrocarbon compound having 4 to 10 carbon atoms and at least two double bonds) with trifluorophosphine or reacting the compound represented by General Formula (1) with trifluorophosphine, and hydrogen or a halogen to obtain a compound represented by General Formula (2): Ru(PF_(3))_(l)(L^(1))_(m)(L^(2))_(n )(wherein L^(1 )represents a hydrogen atom or halogen atom, L^(2 )represents an unsaturated hydrocarbon compound having 4 to 10 carbon atoms and at least two double bonds, 1 is an integer from 1 to 5, m is an integer from 0 to 4, and n is an integer from 0 to 2, provided that l+m+2n=5 or 6). With this method, a trifluorophosphine-ruthenium compound can be synthesized under low-temperature and low-pressure conditions.

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