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Fujii K.,A-D Technologies | Ishizuka T.,A-D Technologies | Nagai Y.,Power System R and nter | Iguchi Y.,Transmission Devices R and D Laboratories | Akita K.,A-D Technologies
SEI Technical Review

Photodiodes (PDs) in the near infrared region (1.0-2.5 μm) are expected to be used for non-destructive analysis in many fields such as pharmaceutical and food industries. The authors have succeeded in the development of InGaAs/GaAsSb type-II quantum well (QW) structures that satisfy low dark current and cut-off wavelength up to 2.5 μm. Low dark current, more than one order of magnitude lower than molecular beam epitaxy (MBE), was realized by fabricating PDs with InP capping layers grown by organometallic vapor phase epitaxy (OMVPE). A large number of QWs with high crystal quality were successfully grown by optimizing the growth condition. The maximum external quantum efficiency (EQE) in the near infrared region was about 48%, which is higher than that of MBE. These results indicate the possibility of high-performance analysis equipment that enables more detailed analysis. Source

Tokumitsu T.,Transmission Devices R and D Laboratories | Kubota M.,Transmission Devices R and D Laboratories | Sakai K.,Sumitomo Electric | Kawai T.,Sumitomo Electric
SEI Technical Review

This paper introduces a novel three-dimensional wafer-level chip size package (3-D WLCSP) technology developed by Sumitomo Electric Device Innovations, Inc. and Sumitomo Electric Industries, Ltd. Our 3-D WLCSP monolithic microwave integrated circuit (MMIC) employs 0.1 μm-gate AlGaAs/GaAs pseudomorphic high electron mobility transistors (PHEMTs) and is designed to be flip-chip assembled as an excellent platform at all frequencies from 10 GHz to millimeter-waves. In the millimeter-wave region, the 76 GHz- and 79 GHz-bands automotive radars are rapidly growing in popularity and the 80 GHz-band (E-band) high-speed microwave communication transceiver is taking off in production. This paper describes our 3-D WLCSP MMIC for such applications, making a comparison between 3-D WLCSP and Si-based technologies. Source

Miura K.,Transmission Devices R and D Laboratories | Iguchi Y.,Transmission Devices R and D Laboratories | Katsuyama T.,Transmission Devices R and D Laboratories | Kawamura Y.,Osaka Prefecture University
SEI Technical Review

Type-II InAs/GaSb superlattices (SLs), which are attractive for the absorption layers of mid-infrared sensors, are usually grown on GaSb substrates. However, since GaSb substrates absorb infrared light, other substrates with high transparency are favorable for back-illuminated sensors. We have focused on InP substrates with high transparency and relatively small lattice mismatch to GaSb. The crystallographic and optical properties of SLs have been improved as the GaSb buffer layer thickness increases due to the reduction of threading dislocations. We have successfully fabricated sensors with the cutoff wavelength of 6.5 μm using InAs/GaSb SL absorption layers grown on InP substrates for the first time. Source

Tatsumi T.,Transmission Devices R and D Laboratories | Tanaka K.,Transmission Devices R and D Laboratories | Sawada S.,Transmission Devices R and D Laboratories | Naito H.,Sumitomo Electric | And 4 more authors.
SEI Technical Review

The authors have developed new EA (electro-absorption modulator) driver ICs for both 25 Gbit/s and 40 Gbit/s transmission. These ICs achieve low power dissipation and high bit-rate operation characteristics by adopting the InP D-HBT (double-heterojunction bipolar transistor) process and optimizing the circuit configurations for each bit rate. In addition, the authors have successfully reduced the size of optical transmitter modules by mounting the EA driver ICs and the DFB (distributed feedback laser) chips in the same packages. This paper outlines the development of the EA driver ICs and evaluates the performance of the optical transmitter modules in accordance with SDH (Synchronous Digital Hierarchy) and 100G Ethernet standards. Source

Mizuno S.,Transmission Devices R and D Laboratories | Yamada F.,Transmission Devices R and D Laboratories | Yamamoto H.,Transmission Devices R and D Laboratories | Nishihara M.,Sumitomo Electric | And 2 more authors.
SEI Technical Review

High-power broadband devices are increasingly required for microwave wireless communication such as terrestrial and satellite communication over 6 GHz (e.g., C-band). Thus far, GaAs devices have been used in these communication systems, however, the properties of GaAs are insufficient to meet the high-power broadband requirements. To address this challenge, we have focused on the superior physical properties of GaN. Based on our GaN high electron mobility transistor (HEMT) technology for cellular base stations (e.g., L/S-band), we have developed a GaN HEMT applicable for the C-band, which is commonly used for microwave wireless communication. This paper summarizes the characteristics of the GaN HEMT and a 20 W-class internally-matched broadband device equipped with the GaN HEMT. Source

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