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Fujii K.,A-D Technologies | Ishizuka T.,A-D Technologies | Nagai Y.,Power System R and nter | Iguchi Y.,Transmission Devices R and D Laboratories | Akita K.,A-D Technologies
SEI Technical Review | Year: 2014

Photodiodes (PDs) in the near infrared region (1.0-2.5 μm) are expected to be used for non-destructive analysis in many fields such as pharmaceutical and food industries. The authors have succeeded in the development of InGaAs/GaAsSb type-II quantum well (QW) structures that satisfy low dark current and cut-off wavelength up to 2.5 μm. Low dark current, more than one order of magnitude lower than molecular beam epitaxy (MBE), was realized by fabricating PDs with InP capping layers grown by organometallic vapor phase epitaxy (OMVPE). A large number of QWs with high crystal quality were successfully grown by optimizing the growth condition. The maximum external quantum efficiency (EQE) in the near infrared region was about 48%, which is higher than that of MBE. These results indicate the possibility of high-performance analysis equipment that enables more detailed analysis.


Tatsumi T.,Transmission Devices R and D Laboratories | Tanaka K.,Transmission Devices R and D Laboratories | Sawada S.,Transmission Devices R and D Laboratories | Naito H.,Sumitomo Electric | And 4 more authors.
SEI Technical Review | Year: 2012

The authors have developed new EA (electro-absorption modulator) driver ICs for both 25 Gbit/s and 40 Gbit/s transmission. These ICs achieve low power dissipation and high bit-rate operation characteristics by adopting the InP D-HBT (double-heterojunction bipolar transistor) process and optimizing the circuit configurations for each bit rate. In addition, the authors have successfully reduced the size of optical transmitter modules by mounting the EA driver ICs and the DFB (distributed feedback laser) chips in the same packages. This paper outlines the development of the EA driver ICs and evaluates the performance of the optical transmitter modules in accordance with SDH (Synchronous Digital Hierarchy) and 100G Ethernet standards.


Mizuno S.,Transmission Devices R and D Laboratories | Yamada F.,Transmission Devices R and D Laboratories | Yamamoto H.,Transmission Devices R and D Laboratories | Nishihara M.,Sumitomo Electric | And 2 more authors.
SEI Technical Review | Year: 2012

High-power broadband devices are increasingly required for microwave wireless communication such as terrestrial and satellite communication over 6 GHz (e.g., C-band). Thus far, GaAs devices have been used in these communication systems, however, the properties of GaAs are insufficient to meet the high-power broadband requirements. To address this challenge, we have focused on the superior physical properties of GaN. Based on our GaN high electron mobility transistor (HEMT) technology for cellular base stations (e.g., L/S-band), we have developed a GaN HEMT applicable for the C-band, which is commonly used for microwave wireless communication. This paper summarizes the characteristics of the GaN HEMT and a 20 W-class internally-matched broadband device equipped with the GaN HEMT.


Tokumitsu T.,Transmission Devices R and D Laboratories | Kubota M.,Transmission Devices R and D Laboratories | Sakai K.,Sumitomo Electric | Kawai T.,Sumitomo Electric
SEI Technical Review | Year: 2014

This paper introduces a novel three-dimensional wafer-level chip size package (3-D WLCSP) technology developed by Sumitomo Electric Device Innovations, Inc. and Sumitomo Electric Industries, Ltd. Our 3-D WLCSP monolithic microwave integrated circuit (MMIC) employs 0.1 μm-gate AlGaAs/GaAs pseudomorphic high electron mobility transistors (PHEMTs) and is designed to be flip-chip assembled as an excellent platform at all frequencies from 10 GHz to millimeter-waves. In the millimeter-wave region, the 76 GHz- and 79 GHz-bands automotive radars are rapidly growing in popularity and the 80 GHz-band (E-band) high-speed microwave communication transceiver is taking off in production. This paper describes our 3-D WLCSP MMIC for such applications, making a comparison between 3-D WLCSP and Si-based technologies.


Kawamura M.,Transmission Devices R and D Laboratories | Nakajima F.,Transmission Devices R and D Laboratories | Oomori H.,Transmission Devices R and D Laboratories | Hara H.,Transmission Devices R and D Laboratories | Yasaki A.,Sumitomo Electric
SEI Technical Review | Year: 2015

The authors have successfully developed new compact optical receiver modules with integrated optical De-multiplexer for 40GBASE-ER4 QSFP+ and 100GBASE-LR4 CFP4. These compact optical receiver modules achieved excellent wavelength specification and sensitivity. By applying the basic structure of the compact optical receiver module for 40GBASE-LR4 QSFP+, the newly developed modules are in the same form as the predecessor. The development of compact optical receiver modules are essential for QSFP+ and CFP4, which are compact optical transceivers, to realize 40 Gbit/s and 100 Gbit/s transmission, respectively. This paper describes the design and representative specification of the new modules. © 2015, Sumitomo Electric Industries Ltd. All rights reserved.


Oki K.,Transmission Devices R and D Laboratories | Kawamura M.,Transmission Devices R and D Laboratories | Nakajima F.,Transmission Devices R and D Laboratories | Suzuki M.,Transmission Devices R and D Laboratories | And 2 more authors.
SEI Technical Review | Year: 2013

The authors have successfully developed a small receiver module with an integrated optical demultiplexer. The module is compliant with the 40GBASE-LR4/OTU3 specifications and sufficiently small (7 mm) to be mounted in a QSFP+ (Quad Small Form-factor Pluggable plus) next generation 40 GE optical transceiver. The optical demultiplexer uses thin film band pass filters to divide a multiplexed optical signal into 4 demultiplexed optical signals, thereby realizing low optical insertion loss and low temperature dependency. The unique optical alignment system that consists of the optical demultiplexer, a PD array, a collimating sleeve and a micro lens array enables the downsizing of the receiver module. The module demonstrates excellent performance at the specified temperature range (-10 to 95 deg. C) and supply voltage (3.0 to 3.6 V). The low loss optical design realizes a high receive sensitivity of -17 dBm, providing a wide margin to the IEEE requirement of -11.5 dBm (OMA) and the OTU3 requirement of -10.8dBm.


Seki M.,Transmission Devices R and D Laboratories | Kono N.,Transmission Devices R and D Laboratories | Kitamura T.,Transmission Devices R and D Laboratories | Itabashi N.,Transmission Devices R and D Laboratories | And 2 more authors.
SEI Technical Review | Year: 2015

Digital coherent technology with multilevel modulation formats is an attractive solution to satisfy the rapid increase in optical traffic demand and has already been adopted in ultra-long haul systems. In the next generation, the application area will be expanded to metro systems, and smaller-sized, lower-power optical components are expected in order to realize high port density. We have developed InP-based modulators and linear driver ICs, which have enabled the modulator module size as small as 34.0 × 16.5 × 6.0 mm3. We demonstrated that a 224-Gbit/s DP-16QAM modulator module, including all of an InP-based modulator, four linear driver ICs, and polarization multiplexing micro-optics, has comparable performance to LiNbO3-based modulators. © 2015, Sumitomo Electric Industries Ltd. All rights reserved.


Miura K.,Transmission Devices R and D Laboratories | Iguchi Y.,Transmission Devices R and D Laboratories | Katsuyama T.,Transmission Devices R and D Laboratories | Kawamura Y.,Osaka Prefecture University
SEI Technical Review | Year: 2014

Type-II InAs/GaSb superlattices (SLs), which are attractive for the absorption layers of mid-infrared sensors, are usually grown on GaSb substrates. However, since GaSb substrates absorb infrared light, other substrates with high transparency are favorable for back-illuminated sensors. We have focused on InP substrates with high transparency and relatively small lattice mismatch to GaSb. The crystallographic and optical properties of SLs have been improved as the GaSb buffer layer thickness increases due to the reduction of threading dislocations. We have successfully fabricated sensors with the cutoff wavelength of 6.5 μm using InAs/GaSb SL absorption layers grown on InP substrates for the first time.


Yoshinaga H.,Transmission Devices R and D Laboratories | Mori H.,Transmission Devices R and D Laboratories | Hashimoto J.-I.,Transmission Devices R and D Laboratories | Tsuji Y.,Transmission Devices R and D Laboratories | And 2 more authors.
SEI Technical Review | Year: 2014

Quantum cascade lasers (QCLs) are promising compact light sources for high-speed and high-sensitivity gas sensing in the mid-infrared region. A QCL has high-speed performance, and its lasing wavelength can cover the entire midinfrared region by controlling the thickness and composition of the superlattice layers in the active region. For the practical use of QCLs, their power-consumption needs to be reduced to 1 W or lower. However, as reducing the operation voltage of a QCL is difficult due to its oscillation mechanism, the threshold current needs to be reduced to reduce power consumption. For this purpose, we reduced the size of a QCL by adopting a buried hetero structure, high-reflectivity facet coating, and our original vertical transition active layer. As a result, we reduced the threshold current and succeeded in developing a low power-consumption QCL with a threshold power consumption as low as 0.52 W under continuous wave (CW) operation at 27° C.


Inoue N.,Transmission Devices R and D Laboratories | Yagi H.,Transmission Devices R and D Laboratories | Masuyama R.,Transmission Devices R and D Laboratories | Katsuyama T.,Transmission Devices R and D Laboratories | And 2 more authors.
SEI Technical Review | Year: 2014

Digital coherent transmission is a promising technology for the next generation 100 Gbit/s transmission systems, and the development of compact coherent receivers and other optical components is essential to realize smaller coherent transceivers. Using InP-based monolithic integration of a 90° hybrid and waveguide photodiodes (PDs), we have developed a photodetector that provides high responsivity and high reliability. The compact coherent receiver, employing these InP-based integration devices, achieved a high sensitivity and demodulation of 128 Gbit/s DP-QPSK modulated signals. These results reveal that the InP-based photodetector monolithically integrated with the 90° hybrid will contribute to the realization of compact coherent receivers for 100 Gbit/s and beyond transmission systems.

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