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Tsukashima K.,Transmission Device R and D Laboratories | Kubota M.,Transmission Device R and D Laboratories | Baba O.,Transmission Device R and D Laboratories | Tango H.,Information and Communications Laboratories | And 3 more authors.
SEI Technical Review | Year: 2011

This paper describes the cost effective 77 GHz transmitter and receiver MMIC (monolithic microwave integrated circuit) that uses a three-dimensional MMIC technology optimized for flip-chip implementation. The MMIC structure incorporates inverse TFMS lines so that a ground metal can be applied to cover the whole chip surface except for interconnect pads. Four metal layers, each of them are covered with polyimide and SiN films. Hence, these MMIC chips require no package, and can be directly assembled on a printed circuit board. The transmitter MMIC is composed of an ×8 multiplier chain (9.5 GHz/38 GHz MLT, 38 GHz AMP, and 38 GHz/76 GHz MLT), and a driver + power amplifier. A saturated output power of 14 dBm has been obtained between 76 and 77 GHz from this transmitter MMIC. A portion of the 38 GHz amplifier output is split for the receiver mixer. The receiver MMIC is composed of multi LNA + MIX blocks and a common ×2 multiplier block that provides a 10 dBm of local oscillator power. A receiver gain of 10 dB and a noise figure of 7.8 dB for a baseband frequency at 10 MHz have been obtained. The die size of the transmitter is 1.5 mm × 2.0 mm and the chip area of the receiver is 1.9 mm × 1.3 mm.

Uematsu Y.,Sumitomo Electric | Kinoshita T.,Sumitomo Electric | Kakue A.,Sumitomo Electric | Okayama A.,Sumitomo Electric | And 9 more authors.
SEI Technical Review | Year: 2011

As the signal processing speed of electronic devices increases, transmission capability over 10Gbps has been required for printed wiring boards (PWBs).designing these PWBs capable of Giga-speed signal transmission, traditional MHz-based signal integrity simulation does not always ensure signal integrity.2008, SimDesign Technocenter, a business unite of Sumitomo Electric System Solution Co., Ltd., developed a new method to overcome this problem by combining 3-D electromagnetic simulation and several GHz signal integrity simulations. Since then, this method has enabled us to obtain accurate simulation results even for over 10 Gbps signals. In this study, this method is applied to 40Gbps optical receiver modules to optimize signal routing with the aim of improving transmission characteristics at over 10Gbps. Firstly, simulation results and measured values are compared to verify the conformity of simulation models. Next, simulation using a 40Gbps optical receiver module model is conducted to consider optimum signal routing. The result shows that this method reduces calculation time without compromising simulation accuracy, and thus increases simulation trial cycles. Although some differences are found between simulation results and actual measurements, similar transmission characteristics are obtained by changing model shapes and improving the modeling method of the adjacent area of a source injection point. Thus, we have succeeded in eliminating unnecessary design and trial routines by feeding back these simulation results to the actual PWB design process. This paper describes mainly challenges in the development of this design method using electromagnetic simulations and explains the advantages of the method.

Yonamine A.,Transmission Device R and D Laboratories | Kubota M.,Transmission Device R and D Laboratories | Baba O.,Transmission Device R and D Laboratories | Tsukashima K.,Transmission Device R and D Laboratories | And 2 more authors.
SEI Technical Review | Year: 2013

We have developed a transmitter chipset using a new tripler, up-converter, and power amplifier, and arranged the chipset in a transmitter. Monolithic microwave integrated circuits (MMICs) of these devices are designed using our wafer level chip size package (WLCSP) technology, and reflow-soldered on a 16 mm x 12 mm printed circuit board (PCB). The WLCSP technology enables the development of highly integrated package-free flip-chip MMICs suitable for surface mounting, and is therefore expected to reduce production costs significantly. To achieve high performance at the E-band frequency, 1) the amplifier is designed with a dual or triple high electron mobility transistor (HEMT) topology, with the power amplifier designed with a variable gain scheme, 2) The tripler effectively cancels the second harmonic of input signals that otherwise leak into the E-band frequency, and 3) the up-converter uses a balanced resistive mixer and a pair of 90° broadside couplers. The transmitter that incorporates these new devices exhibits a conversion gain of 22 dB and saturated output power level of 20 dBm at 81 - 86 GHz.

Katsuyama T.,Transmission Device R and D Laboratories
SEI Technical Review | Year: 2012

Semiconductor quantum devices, composed of semiconductor quantum wells and superlattices, are widely used in our daily lives as key devices for opto-electronic equipment. The quantum well structure consists of alternating ultra-thin semiconductor films in which electrons and holes are confined. This structure gives rise to discrete energy levels and minibands in their potential wells, and thus induces new properties that cannot be obtained in a bulk material. These properties have enabled opto-electronics devices to have various new functions and high performance. This paper describes various semiconductor quantum photonic devices developed in Sumitomo Electric for applications in a wide spectrum range of 1 to 10 μm. These devices include a semiconductor quantum well laser and modulator for high speed optical communication, quantum cascade laser for environmental gas analysis, and nearinfrared imaging sensor for life science applications.

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