Palo Alto, CA, United States
Palo Alto, CA, United States
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Patent
Translucent | Date: 2017-03-08

III-N material grown on a buffer on a substrate that includes one of a single crystal silicon or a single crystal sapphire. A buffer of single crystal alloy, including one of ErxAl1_ XN or (RE1yRE21_y)xAl1_xN, is positioned on the substrate. A layer of single crystal III-N material is positioned on the surface of the buffer and the single crystal alloy has a lattice constant substantially crystal lattice matched to the layer of single crystal III-N material. When the III-N material is GaN, the x in the formula for the alloy varies from less than 1 adjacent the substrate to greater than or equal to 0.249 adjacent the layer of single crystal GaN.


An image display system is provided comprised of a virtual window system that creates a visual coherency between the patients anatomical images and the actual patient by aligning the image on the display to the patient and then presenting the image to the user in a way that feels as if the user is looking directly into the patient through the display. The image shown within the image display system is dependent upon the position of the image display apparatus and the position of the user so that the display orientation of the image may be biased slightly toward the user to improve ergonomics and usability.


Patent
Translucent | Date: 2011-02-03

The invention relates to a semiconductor based structure for a device for converting radiation to electrical energy comprising various combinations of rare-earths and Group IV, III-V, and II-VI semiconductors and alloys thereof enabling enhanced performance including high radiation conversion efficiency.


Patent
Translucent | Date: 2011-09-13

The present invention relates to semiconductor devices suitable for electronic, optoelectronic and energy conversion applications. In a particular form, the present invention relates to the fabrication of a thin film solar cells and thin film transistors through the advantageous combination of semiconductors, insulators, rare-earth based compounds and amorphous and/or ceramic and/or glass substrates. Example embodiments of crystalline or polycrystalline thin film semiconductor-on-glass formation using rare-earth based material as impurity barrier layer(s) are disclosed. In particular, thin film silicon-on-glass substrate is disclosed as the alternate embodiment, with impurity barrier designed to inhibit transport of deleterious alkali species from the glass into the semiconductor thin film.


The invention comprises a virtual window system that creates a visual coherency between the image of the patient and his or her anatomy and the patient by aligning the image of the patient anatomy on the display to the patient and presenting the image to the user that feels is if the user is looking directly into the patient through the display. The invention is designed to also display medical devices, such as a minimally invasive tool. The system substantially unifies the coordinate systems of the patient, the medical device, the display, and the physicians hands. The invention creates a visual coherency between the motion of the medical device in the image and the motion of the physicians hands manipulating the device. This invention also creates a visual coherency between the motion of the image in the display and display.


Patent
Translucent | Date: 2014-10-27

A method of forming a REO dielectric layer and a layer of a-Si between a III-N layer and a silicon substrate. The method includes depositing single crystal REO on the substrate. The single crystal REO has a lattice constant adjacent the substrate matching the lattice constant of the substrate and a lattice constant matching a selected III-N material adjacent an upper surface. A uniform layer of a-Si is formed on the REO. A second layer of REO is deposited on the layer of a-Si with the temperature required for epitaxial growth crystallizing the layer of a-Si and the crystallized silicon being transformed to amorphous silicon after transferring the lattice constant of the selected III-N material of the first layer of REO to the second layer of REO, and a single crystal layer of the selected III-N material deposited on the second layer of REO.


Patent
Translucent | Date: 2011-09-30

Examples of device structures utilizing layers of rare earth oxides to perform the tasks of strain engineering in transitioning between semiconductor layers of different composition and/or lattice orientation and size are given. A structure comprising a plurality of semiconductor layers separated by transition layer(s) comprising two or more rare earth compounds operable as a sink for structural defects is disclosed.


Patent
Translucent | Date: 2011-12-23

The invention relates to a semiconductor based structure for a device for converting radiation to electrical energy comprising various combinations of rare-earths and Group IV, III-V, and II-VI semiconductors and alloys thereof enabling enhanced performance including high radiation conversion efficiency.


Patent
Translucent | Date: 2011-09-14

The present invention discloses structures to increase carrier mobility using engineered substrate technologies for a solid state device. Structures employing rare-earth compounds enable heteroepitaxy of different semiconductor materials of different orientations.


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