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Albuquerque, NM, United States

Barnaby H.J.,Arizona State University | Malley S.,Arizona State University | Land M.,Arizona State University | Charnicki S.,Arizona State University | And 4 more authors.
IEEE Transactions on Nuclear Science

Titanium-oxide (TiO 2 ) memristors exposed to 1-MeV alpha particles exhibit only minor changes in the electrical response for ion fluencies up to 10 14cm - 2. At higher fluence levels, virgin and off-state devices exhibit measurable increases in current conduction between the two platinum (Pt) electrodes. Analysis, supported by radiation transport and numerical device simulations, suggests that radiation-induced displacement damage in the TiO 2 film increases the density of oxygen vacancies, thereby altering both resistivity in the bulk of the transition-metal oxide and the junction characteristics of Pt-TiO 2 interface. Nevertheless, the experimental results indicate continued switching functionality of the memristors even after exposure to 10 15 cm - 2 alpha particles. The high intrinsic vacancy density in the devices prior to radiation exposure is identified as the primary feature contributing to apparent radiation hardness. © 2011 IEEE. Source

Deionno E.,The Aerospace Corporation | Looper M.D.,The Aerospace Corporation | Osborn J.V.,The Aerospace Corporation | Barnaby H.J.,Arizona State University | And 2 more authors.
IEEE Aerospace Conference Proceedings

Memristor devices have been identified as potential replacements for a variety of memory applications and may also be suitable for space applications. In this work, we present a review of radiation testing on TiO2-based memristor devices. The experimental results from three previous studies are reviewed and coupled here with modeling to gain a more complete understanding of the energy deposition and resulting effects on the electrical performance of the device. In addition, we discuss the implications of having a nanometer scaled thin film device and how that affects the energy deposition from the various radiation sources. © 2013 IEEE. Source

Tong W.M.,Hewlett - Packard | Tong W.M.,TransEL Corporation | Yang J.J.,TransEL Corporation | Kuekes P.J.,TransEL Corporation | And 8 more authors.
IEEE Transactions on Nuclear Science

Semiconducting TiO2 displays non-volatile multi-state, hysteretic behavior in its I - V characteristics that can be exploited as a memory material in a memristive device. We exposed memristive TiO2 devices in the on and off resistance states to 45 Mrad(Si) of ̃l-MeV gamma radiation and 23 Mrad(Si) of 941-MeV Bi-ions under zero bias conditions and none of the devices were degraded. These results suggest that TiO2 memristive devices are good candidates for radiation hard electronics for aerospace. © 2010 IEEE. Source

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