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Tainan, Taiwan

Hsu W.-C.,Institute of Microelectronics | Lee C.-S.,Feng Chia University | Ho C.-S.,Institute of Microelectronics | Lai Y.-N.,Institute of Microelectronics | And 5 more authors.
Electrochemical and Solid-State Letters | Year: 2010

This article reports an InAlAs/InGaAs metal oxide semiconductor metamorphic high electron mobility transistor (MOS-MHEMT) by using ozone water oxidation treatment to form an 8.5 nm thick gate oxide with a superior surface flatness. The proposed MHEMT with (without) ozone treatment has demonstrated a lower gate leakage density of 2μA/mm (0.48 mA/mm) at Vgd =-5 V, improved output conductance (gd) of 8.5 (33.1) mS/mm, gate-voltage swing of 0.9 (0.45) V, enhanced output power of 18.34 (13.43) dBm, and power-added efficiency of 46.8 (26.3)% at 300 K, with gate dimensions of 1×200 μm2. © 2010 The Electrochemical Society. Source

Chiu H.-C.,Chang Gung University | Wang H.-C.,Chang Gung University | Yang C.-W.,Chang Gung University | Hsin Y.-M.,National Central University | And 3 more authors.
IEEE Transactions on Device and Materials Reliability | Year: 2014

This work develops a thermally stable micromachined AlGaN/GaN high-electron mobility transistor (HEMT) with an enhanced breakdown voltage. After removal of the Si substrate beneath the HEMT, a 300-nm SiO2 and a 20- μm copper layer are deposited to form the GaN-on-insulator (G.O.I.) structure. The self-heating at high current that is exhibited by GaN HEMTs that are by previously developed full substrate removal methods is eliminated. The need for complicated substrate-transfer technology is also eliminated, increasing chip package yield. The low frequency noise measurement results also demonstrate that the trap density of the buffer/transition layer is reduced by the removal of the substrate and micromachining of the HEMTs. © 2001-2011 IEEE. Source

Wu T.-Y.,National Cheng Kung University | Sze P.-W.,Kao Yuan University | Hu C.-C.,National Cheng Kung University | Huang T.-J.,National Cheng Kung University | And 3 more authors.
ECS Transactions | Year: 2011

Through a simple, low-temperature liquid-phase deposition (LPD) method, SrTiO 3 thin films were deposited on GaN as the gate dielectric for metal oxide semiconductor high electron mobility transistor application. X-ray photoelectron spectroscopy was employed to characterize the films. Electrical characteristics of the SrTiO 3 films on GaN showed that the lowest leakage current was 4.2×10 -9 A/cm 2 at -1 MV/cm after annealing at 400°C AlGaN/GaN MOSHEMTs with LPD-SrTiO 3 of 20 nm-thick as the gate dielectric were also fabricated. The suppressed gate leakage current improves both subthreshold slope and on/off current ratio. Wider gate voltage swing and flatter transconductance of the MOSHEMT demonstrate better device linearity. ©The Electrochemical Society. Source

Hu C.-C.,National Cheng Kung University | Chiu C.-A.,National Cheng Kung University | Yu C.-H.,National Cheng Kung University | Xu J.-X.,National Cheng Kung University | And 4 more authors.
Vacuum | Year: 2015

AlGaN/GaN metal-oxide-semiconductor high electron mobility transistor (MOSHEMT) with a liquid phase deposited (LPD) ZrO2 thin film as gate insulator was fabricated. Compared with the conventional HEMT, the maximum drain current increases from 492 to 627 mA/mm, and leakage current is four orders magnitude lower. The gate swing voltage and off-state breakdown were also improved while applying ZrO2 oxide layer. © 2015 Elsevier Ltd.All rights reserved. Source

Hu C.-C.,National Cheng Kung University | Lin M.-S.,National Cheng Kung University | Wu T.-Y.,National Cheng Kung University | Adriyanto F.,National Cheng Kung University | And 3 more authors.
ECS Transactions | Year: 2011

Barium-doped TiO 2 films deposited on GaN layers at low temperature through a simple liquid-phase deposition method is investigated. The use as a gate dielectric in AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors (MOSHEMTs) is also demonstrated. The electrical characteristics of the metal-oxide-semiconductor (MOS) structure on n-doped GaN show that the leakage current density is about 5.09 × 10 -9 A/cm 2 at 1 MV/cm, and the breakdown field is more than 13 MV/cm. The maximum drain current density of the AlGaN/GaN MOSHEMTs is higher than that of HEMTs, in which a wider gate voltage swing, a lower sub-threshold swing (112mV/dec), and a higher I ON/I OFF ratio (4.5 × 10 5) are obtained. ©The Electrochemical Society. Source

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