Toyo Tanso

Kagawa, Japan

Toyo Tanso

Kagawa, Japan
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A porous carbon having a high oxidation reaction temperature, a method of manufacturing the porous carbon, and an adsorption/desorption apparatus using the porous carbon are provided. A porous carbon includes mesopores and a carbonaceous wall forming an outer wall of the mesopores, characterized by being composed mainly of hard carbon and having an oxidation reaction temperature of 600C or higher. It is desirable that the porous carbon have an average interlayer spacing d(002) of 0.350 nm or greater, as determined by an X-ray diffraction method after heating the porous carbon at 2500C or higher for 30 minutes to 60 minutes.


When a SiC substrate (40) after performing mechanical treatment is heat-treated under SiC atmosphere to etch the SiC substrate (40), the etching rate is controlled by adjusting the inert gas pressure around the periphery of the SiC substrate (40). As a result, when latent scratches or the like exist in the SiC substrate (40), the latent scratches or the like can be removed. Accordingly, the surface of the SiC substrate (40) does not become rough, even if epitaxial growth and heat treatment and the like are performed. This can manufacture high-quality SiC substrates.


This method for estimating the depth of latent scratches in SiC substrates includes an etching step, a measurement step, and an estimation step. In the etching step, a SiC substrate in which at least the surface is formed from single crystal SiC, and which has been subjected to machining, is subjected to heat treatment under Si atmosphere to etch the surface of the SiC substrate. In the measurement step, the surface roughness or the residual stress of the SiC substrate which has been subjected to the etching step is measured. In the estimation step, the depth of latent scratches or the presence or absence of latent scratches in the SiC substrate before the etching step are estimated on the basis of the results obtained in the measurement step.


An object is to provide a graphite-copper composite electrode material that is capable of reducing electrode wear to a practically usable level and to provide an electrical discharge machining electrode using the material. A graphite-copper composite electrode material includes a substrate comprising a graphite material and having pores, and copper impregnated in the pores of the substrate, the electrode material having an electrical resistivity of 2.5 m or less, preferably 1.5 m or less, more preferably 1.0 m or less. It is desirable that the substrate comprising the graphite material have an anisotropy ratio of 1.2 or less. It is desirable that an impregnation rate of the copper in the electrode material is 13% or greater. It is desirable that the substrate comprising the graphite material have a bulk density of from 1.40 Mg/m^(3) to 1.85 Mg/m^(3).


Provided is a method in which the rate of growth is not lowered even when a cut SiC seed crystal is used in performing MSE process. A SiC seed crystal that is used as a seed crystal in metastable solvent epitaxy process (MSE process) is heated under Si atmosphere and the surface of the SiC seed crystal is etched to remove a work-affected layer that was formed by cutting. Work-affected layers generated on SiC seed crystals are known to inhibit growth during MSE process, and therefore removing the work-affected layers can prevent lowering of the rate of growth.


A carbonaceous material is fabricated by kneading of carbon powder and a binder. The carbonaceous material is granulated such that an average particle diameter of the carbonaceous material is 0.3 mm or more. A brush material is fabricated by mixing of the granulated carbonaceous material and metallic powder. A ratio of the metallic powder to a total weight of the brush material is adjusted to 1 % by weight or more and 30 % by weight or less. Pressure molding is performed on the fabricated brush material, and thermal processing is further performed on the brush material at a temperature at which a resin in the brush material is not carbonized.


Patent
Toyo Tanso | Date: 2017-05-03

Provided are a susceptor that, in forming a thin film on a wafer, can reduce impurities or the like adhering to the wafer and a method for manufacturing the same. A susceptor includes a base material (10) with a recess (11), a tantalum carbide layer (22) formed directly on a bottom surface (11a) and a side surface (11b) of the recess (11), and a silicon carbide layer (20) formed on a surface of the base material (10) except for the recess (11).


Patent
Toyo Tanso | Date: 2017-01-06

An expanded-graphite sheet whose thermal conductivity in its surfacewise directions is relatively uniform and higher than its thermal conductivity in its perpendicular direction can be produced efficiently at relatively low cost. Because the expanded-graphite sheet is made of expanded graphite alone and has thermal conductivity in parallel direction of 350 W/(mK) or more, its thermal conductivity in parallel direction is much higher than its thermal conductivity in a perpendicular direction; therefore, it is suitable for the conduction and diffusion of heat. Besides, the expanded-graphite sheet can be produced easily, in a short time, efficiently, at relatively low cost.


Patent
Kwansei Gakuin Educational Foundation and Toyo Tanso | Date: 2017-09-27

Provided is a surface treatment method for a SiC substrate (40), the method being capable of controlling whether to generate a step bunching or the type of step bunching that is generated. In the surface treatment method in which the surface of the SiC substrate (40) is etched by heating the SiC substrate (40) under Si vapor pressure, an etching mode and an etching depth which are determined at least on the basis of an etching rate, are controlled to etch the SiC substrate (40), so that a surface pattern of the SiC substrate (40) after etching treatment is controlled.


Patent
Toyo Tanso | Date: 2017-09-27

Provided is a SiC substrate treatment method for, with respect to a SiC substrate (40) that has, on its surface, grooves (41), activating ions while preventing roughening of the surface of the substrate. In the method, an ion activation treatment in which the SiC substrate (40) is heated under Si vapor pressure is performed to the SiC substrate (40) has, on its surface, an ion implantation region (46) in which ions have been implanted, and has the grooves (41) provided in a region including at least the ion implantation region (46), thereby ions that are implanted in the SiC substrate (40) is activated while etching the surface of the substrate.

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