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Shiojiri D.,Tokyo Institute of Technology | Fukuda D.,Tokyo Institute of Technology | Yamauchi R.,Tokyo Institute of Technology | Tsuchimine N.,TOSHIMA Manufacturing Co. | And 5 more authors.
Applied Physics Express | Year: 2016

The epitaxial crystallization of β-Ga2O3 thin films on NiO-buffered α-Al2O3(0001) substrates via the solid-phase crystallization of amorphous Ga2O3 thin films by KrF excimer laser annealing at room temperature (RT) was examined. The results of X-ray and reflection high-energy electron diffraction measurements indicated that the epitaxial β-Ga2O3(201) thin films were fabricated by RT laser annealing. The optical bandgap of the thin films was estimated to be 4.9 eV from the results of UV/vis transmittance measurements. In the cathodoluminescence spectrum, UV-green luminescence was observed for the thin films. These optical properties are similar to those of bulk β-Ga2O3. © 2016 The Japan Society of Applied Physics.


PubMed | Osaka University, Namiki Precision Jewel Co., Tokyo Institute of Technology and Toshima Manufacturing Co.
Type: | Journal: Scientific reports | Year: 2015

Thin-film epitaxy is critical for investigating the original properties of materials. To obtain epitaxial films, careful consideration of the external conditions, i.e. single-crystal substrate, temperature, deposition pressure and fabrication method, is significantly important. In particular, selection of the single-crystal substrate is the first step towards fabrication of a high-quality film. Sapphire (single-crystalline -Al2O3) is commonly used in industry as a thin-film crystal-growth substrate, and functional thin-film materials deposited on sapphire substrates have found industrial applications. However, while sapphire is a single crystal, two types of atomic planes exist in accordance with step height. Here we discuss the need to consider the lattice mismatch for each of the sapphire atomic layers. Furthermore, through cross-sectional transmission electron microscopy analysis, we demonstrate the uniepitaxial growth of cubic crystalline thin films on bistepped sapphire (0001) substrates.


Hishinuma Y.,Japan National Institute for Fusion Science | Tanaka T.,Japan National Institute for Fusion Science | Tanaka T.,Toshima Manufacturing Co. | Nagasaka T.,Japan National Institute for Fusion Science | And 5 more authors.
Fusion Science and Technology | Year: 2011

Metal Organic Chemical Vapor Deposition (MOCVD) process is a vapor phase growth technique which is synthesized via vapor phase from metal organic complex material and will become one of the desirable deposition methods to form oxide layer on the complicated shape ducts and large-area walls of breeding blanket components. The single phase erbium oxide (Er2O3) coating layers were able to be synthesized on metal substrates such as stainless-steel 316 (SUS316) and vanadium alloy and Si single crystal plates. In this paper, the hydrogen permeation and electrical property Of Er2O 3coating layer via MOCVD process will be mainly reported. The hydrogen permeation quantity of Er2O3coating layer estimated by QMS was decreased by 1/20 compared with SUS 316 at 400 °C. In addition, the demonstration of Er2O3 coating into the interior surface of the stainless-steel was also succeeded.


Hishinuma Y.,Japan National Institute for Fusion Science | Tanaka T.,Toshima Manufacturing Co. | Tanaka T.,Japan National Institute for Fusion Science | Nagasaka T.,Japan National Institute for Fusion Science | And 3 more authors.
Journal of Nuclear Materials | Year: 2011

An electrical insulating coating on the blanket components such as ducts and walls is an attractive concept for reducting the Magneto Hydrodynamics pressure drop. Erbium oxide was shown to be a promising candidate coating because of its high stability in liquid lithium and high electrical resistivity. We have applied the Metal Organic Chemical Vapor Deposition (MOCVD) process to produce Er2O3 coating layers on the large areas and/or complicated shape components. Recently, we confirmed that Er2O 3 coating layers were synthesized on a vanadium alloy and on silicon single crystal plates. In this work, we tried to form Er2O 3 thin coating layer on the interior surface of the short quartz tube to demonstrate Er2O3 coating of components relevant to liquid blankets. The improvement found by the using an organic complex as the erbium source material and the effects of the deposition temperature for the further upgrading the MOCVD process were also evaluated. © 2010 Elsevier B.V. All rights reserved.


Hishinuma Y.,Japan National Institute for Fusion Science | Tanaka T.,Toshima Manufacturing Co. | Tanaka T.,Japan National Institute for Fusion Science | Nagasaka T.,Japan National Institute for Fusion Science | And 3 more authors.
Fusion Engineering and Design | Year: 2011

The electrical insulating coating on the blanket components such as ducts and walls is an attractive concept for reducing the Magneto Hydrodynamic (MHD) pressure drop. Erbium oxide (Er2O3) is a promising candidate coating because of its high stability in liquid lithium and high electrical resistivity according to the results of Er2O3 bulk and Physical Vapor Deposition (PVD) thin film. We have investigated the Metal Organic Chemical Vapor Deposition (MOCVD) process for the large area and complicatedly shaped Er2O3 coating. The Er 2O3 insulator coating formation on the various metal disk substrates was successfully carried out. The crystallinity of the Er 2O3 coating on the metal substrate increased with the decrease in the surface roughness of the metal substrate and, thus, the crystallinity of the coating can be improved by reducing the roughness of the substrate surface. Furthermore, the Er2O3 coating into the interior surface of the honing SUS pipe, whose interior surface was polished by rotating grinding and brush, was formed stably through the MOCVD process. © 2011 Elsevier B.V. All rights reserved.


Patent
Kobelco Research Institute and Toshima Manufacturing Co. | Date: 2013-03-19

The Li-containing transition metal oxide sintered compact of the present invention includes Li and a transition metal, and further includes Al, Si, Zr, Ca, and Y as impurity elements, of which contents are controlled to the following ranges: Al90 ppm; Si100 ppm; Zr100 ppm; Ca80 ppm; and Y20 ppm, wherein the sintered compact has a relative density of 95% or higher and a specific resistance of lower than 210^(7 )cm. The present invention makes it possible to stably form Li-containing transition metal oxide thin films useful as the positive electrode thin films of secondary batteries or the like at a high deposition rate without causing abnormal discharge.


Patent
Kobelco Research Institute and Toshima Manufacturing Co. | Date: 2015-01-28

The Li-containing transition metal oxide sintered compact of the present invention includes Li and a transition metal, and further includes Al, Si, Zr, Ca, and Y as impurity elements, of which contents are controlled to the following ranges: Al 90 ppm; Si 100 ppm; Zr 100 ppm; Ca 80 ppm; and Y 20 ppm, wherein the sintered compact has a relative density of 95% or higher and a specific resistance of lower than 2 x 10^(7) cm. The present invention makes it possible to stably form Li-containing transition metal oxide thin films useful as the positive electrode thin films of secondary batteries or the like at a high deposition rate without causing abnormal discharge.


Patent
Toshima Manufacturing Co. and Toyota Jidosha Kabushiki Kaisha | Date: 2010-11-04

The present invention provides a method for manufacturing a steel plate-shaped component which can increase the yield and the working efficiency. When a steel plate-shaped component (1) such as a pole parking is manufactured, a steel disk-shaped initial material (10) is vertically placed in a cavity (41) of a dice (40) of a cold forging die so that the thickness direction of the initial material (10) is perpendicular to a pressing direction. The initial material (10) is pressed through cold forging against the peripheral side portion (11) by a punch (42) while the initial thickness of the initial material (10) is maintained substantially as it is, whereby an approximate component (20) approximating the plate-shaped component (1) is obtained. Subsequently, a margin portion (25) of the approximate component (20) is removed, whereby a half-finished product (30) is obtained. The half-finished product (30) is subjected to cutting work, carburizing processing, and so on, whereby the plate-shaped component (1) is obtained.


Shiojiri D.,Tokyo Institute of Technology | Yamauchi R.,Tokyo Institute of Technology | Fukuda D.,Tokyo Institute of Technology | Tsuchimine N.,TOSHIMA Manufacturing Company Ltd | And 4 more authors.
Journal of Crystal Growth | Year: 2015

Highly oriented crystalline Ga2O3 thin films were fabricated at room temperature (RT) by excimer laser annealing. Amorphous Ga2O3 thin films were grown on α-Al2O3 (0001) substrates at RT by the pulsed laser deposition method using a focused KrF excimer laser and a sintered β-Ga2O3 target. Amorphous precursor films were irradiated by a non-focused KrF excimer laser (100-250 mJ/cm2) at RT. The results of x-ray and reflection high-energy electron diffraction measurements indicated that highly (101)-oriented crystalline β-Ga2O3 thin films were obtained after RT laser annealing. The optical bandgaps of the crystalline thin films were approximately 4.7-4.9 eV, as determined from the UV/Vis transmittance. The film surfaces after laser annealing revealed slight planar grain growth, indicating a high degree of crystallinity and showed the root mean square roughnesses of 0.28-0.48 nm. © 2015 Elsevier B.V. All rights reserved.


Kato Y.,Tokyo Institute of Technology | Shiraishi N.,Tokyo Institute of Technology | Tsuchimine N.,Toshima Manufacturing Company Ltd | Kobayashi S.,Toshima Manufacturing Company Ltd | Yoshimoto M.,Tokyo Institute of Technology
Journal of Crystal Growth | Year: 2010

We fabricated epitaxial SrB6 (1 0 0) thin films on ultrasmooth sapphire (α-Al2O3 single crystal) (0 0 0 1) substrates by laser molecular beam epitaxy. Reflection high-energy electron diffraction and X-ray diffraction measurements indicated the heteroepitaxial structure of SrB6 (1 0 0)/sapphire (0 0 0 1) with three domains of epitaxial relationship. The prepared films exhibited atomically stepwise surface morphology, similar to that of the ultrasmooth substrate used, with 0.2-nm-high atomic steps and ∼70-nm-wide terraces. The SrB6 epitaxial thin films showed semiconducting behavior, with a resistivity of 4.8 Ω cm at room temperature. © 2009 Elsevier B.V. All rights reserved.

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