Tokyo, Japan

Established in 1949 as a national university, Tokyo University of Agriculture and Technology , nicknamed "Nōkōdai" or "TUAT", is a research-oriented national university with two campuses, one each located in the cities of Fuchū and Koganei, Tokyo. The undergraduate organization of the university has two faculties, Agriculture and Engineering, and several departments as shown below. Wikipedia.


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Patent
Tokyo University of Agriculture and Technology | Date: 2017-01-04

A phase sensitive detection mechanism that uses electrical processing is realized, and an optical detection device, an optical detection method, and a program that are capable of detecting faint light at high speed and with high sensitivity are provided by a simple configuration. A light source section generates a first pulsed light. A filter section transmits a second pulsed light formed from a portion of a frequency spectrum exhibited by the first pulsed light, and reflects a third pulsed light formed from another portion of the frequency spectrum exhibited by the first pulsed light. A phase modulation section phase modulates the second pulsed light at plural phases. A multiplexing section produces a fourth pulsed light by multiplexing the third pulsed light with the second pulsed light phase modulated by the phase modulation section. A detector spectrally disperses and detects scattered light generated by radiating the fourth pulsed light onto a target object. An extraction section uses specific calculation processing to synchronize with the phase modulation in the phase modulation section, so as to extract a frequency spectrum of scattered light scattered based on the second pulsed light phase modulated by the phase modulation section from the frequency spectrum of the scattered light detected by the detector.


Patent
Tamura Corporation, Tokyo University of Agriculture and Technology | Date: 2017-03-15

Provided are: a semiconductor substrate comprising a -Ga_(2)O_(3) single crystal, on which an epitaxial layer comprising a -Ga_(2)O_(3) single crystal can be made to grow at a high growth rate using the hydride vapor phase epitaxy (HVPE) method; an epitaxial wafer comprising such semiconductor substrate and epitaxial layer; and a method for manufacturing such epitaxial wafer. As one embodiment of the present invention, provided is a semiconductor substrate (11), used as a base substrate for epitaxial crystal growth by the HVPE method, wherein the semiconductor substrate comprises a -Ga_(2)O_(3)-based single crystal and a plane parallel to the [010] axis of the -Ga_(2)O_(3) single crystal is used as the principal surface.


Patent
Tokyo University of Agriculture, Technology and Nihon Kohden | Date: 2016-06-30

A blood vessel diameter measuring apparatus includes an ultrasonic probe which emits an ultrasonic wave toward a blood vessel, receives an ultrasonic wave reflected from the blood vessel and outputs an ultrasonic signal based on the received ultrasonic wave, a detecting section which is attached to the ultrasonic probe and outputs information indicating a position of the ultrasonic probe and an attitude of the ultrasonic probe with respect to the blood vessel, a support fixture which supports the ultrasonic probe so as to enable the ultrasonic probe to perform at least one of operations, an image processing section which produces an ultrasonic image of the blood vessel by using the ultrasonic signal from the ultrasonic probe and the position/attitude information from the detecting section, and a measuring section which measures a blood vessel diameter of the blood vessel by using the produced ultrasonic image.


Patent
Tamura Corporation, Tokyo University of Agriculture and Technology | Date: 2016-08-10

Provided are: a method for efficiently growing a high-quality, large diameter -Ga_(2)O_(3)-based single crystal film; and a crystalline layered structure having a -Ga_(2)O_(3)-based single crystal film grown using this growing method. As one embodiment, the present invention provides a method for growing a -Ga_(2)O_(3)-based single crystal film by using the HVPE method, and including a step for exposing a Ga_(2)O_(3)-based substrate (10) to a gallium chloride gas and an oxygen-containing gas, and growing a -Ga_(2)O_(3)-based single crystal film (12) on the principal surface (11) of the Ga_(2)O_(3)-based substrate (10) at a growing temperature of 900 C or higher.


Patent
Toyota Jidosha Kabushiki Kaisha, University of Tokyo, Tokyo University of Agriculture and Technology | Date: 2016-05-13

A vehicle control apparatus includes: a storage apparatus configured to store a steering modification point of a vehicle and a vehicle speed target point of the vehicle that are associated with map information; and an electronic control unit configured to: detect a position of the vehicle; detect a travel direction of the vehicle; calculate a lane travel distance, the position of the vehicle, and the travel direction of the vehicle; generate, lane travel map data, a target direction of the vehicle, and a target vehicle speed of the vehicle, on the basis of the map information, the steering modification point, the vehicle speed target point, the position of the vehicle, and the travel direction of the vehicle; and output a control signal to control the vehicle on the basis of the position of the vehicle, the lane travel distance of the vehicle, and the lane travel map data.


Patent
Otsuka Electronics Co., Tokyo University of Agriculture and Technology | Date: 2015-12-30

A dynamic light scattering measurement device (1) includes an irradiation section that applies light emitted from a low-coherence light source (10) to a sample (40) that includes particles (42), a spectral intensity acquisition section (62) that disperses reflected light from a reference plane and scattered light from the sample (40) that has passed through the reference plane to acquire a spectral intensity of interference light of the reflected light and the scattered light, the reference plane being situated to intersect an optical path through which the light is applied to the sample, and a measurement section (80) that measures dynamic light scattering of the sample (40) based on the acquired spectral intensity.


Komiya S.,Tokyo University of Agriculture and Technology
Coordination Chemistry Reviews | Year: 2012

Synthesis, reactions, and catalyses of heterodinuclear organometallic complexes without connecting ligands L 2RM-ML' n (M=Pt, Pd; M'=Mo, W, Mn, Re, Fe, Co) are described. They are regarded as a simplest model for studying the cooperative effect of two transition metals in catalysis. Organic ligand R is found to move reversibly from M to M' along M-M' bond, which is accelerated by addition of electron-deficient olefins. The reaction is regarded as a reductive elimination of M'-R and the reverse process as oxidative addition reaction. The results may mimic the mobility of σ-bound organic group on heterogeneous surface. Visible light enhances reductive elimination (alkyl group transfer) in ( tBu 2bpy)Me 2PhPt-Mn(CO) 5. Enhanced CO insertion of heterodinuclear methylpalladium-cobalt system in comparison with mononuclear systems is presented and the mechanism is found to involve alkyl transfer followed by CO insertion into the Co-C bond and oxidative addition of σ-organic groups along heterometal-metal bond. Highly specific C-S bond cleavage reactions of heterodinuclear complex with thiiranes and thietanes are presented. Catalytic reactions such as carbonylation of thietane, copolymerization of aziridine and CO, and insertion of olefin or acetylene into Mo(or W)-H bond promoted by heterodinuclear complexes were described, where enhanced catalytic activity has been shown. © 2011 Elsevier B.V.


Patent
Tokyo University of Agriculture and Technology | Date: 2016-03-08

A nitride semiconductor crystal has a diameter of four inches or more and is warped to have a curvature radius of 100 m or more, and has an impurity concentration of 110^(17)/cm^(3 )or lower. A manufacturing method for a nitride semiconductor crystal includes providing a substrate, feeding a gallium trihalide gas having a partial pressure of 9.010^(3 )atm or higher onto the substrate, and growing a GaN crystal in the C-axis direction on the substrate, where a growth temperature for the GaN crystal is 1200 C. or higher, or a manufacturing method for a nitride semiconductor crystal includes providing a substrate, feeding an aluminum trihalide gas having a partial pressure of 9.010^(3 )atm or higher onto the substrate, and growing an AlN crystal in the C-axis direction on the substrate, where a growth temperature for the AlN crystal is 1400 C. or higher.


Patent
Tokyo University of Agriculture and Technology | Date: 2016-02-03

Problem] To provide a technique whereby, in cultivating a crop, factors relating to differentiation into flower buds and leaf buds, sprouting, flowering and fruiting, growth of young shoots, etc., are regulated. For example, the invention addresses the problem of regulating the growth of a crop so that leaf buds sprout in tandem with the sprouting of flower buds and flowering and fruiting are repeated under fresh foliage. [Solution] A plant cultivation method which comprises environmentally stimulating a plant to regulate differentiation into flower buds and/or differentiation into leaf buds. In a typical embodiment, the plant is held in an environment at a temperature of 16-40C at a photoperiod of 8-13 hours immediately after harvesting fruits. As another environmental stimulus, the plant is held in, for example, an environment at a temperature of 3-7C. As still another environmental stimulus, the plant is held in, for example, an environment a temperature of 16-23C at a photoperiod of 8-11 hours.


Patent
Tokyo University of Agriculture and Technology | Date: 2016-08-24

A nitride semiconductor crystal has a diameter of four inches or more and is warped to have a curvature radius of 100 m or more, and has an impurity concentration of 1 10^(17)/cm^(3) or lower. A manufacturing method for a nitride semiconductor crystal includes providing a substrate, feeding a gallium trihalide gas having a partial pressure of 9.0 10^(-3) atm or higher onto the substrate, and growing a GaN crystal in the -C-axis direction on the substrate, where a growth temperature for the GaN crystal is 1200C or higher, or a manufacturing method for a nitride semiconductor crystal includes providing a substrate, feeding an aluminum trihalide gas having a partial pressure of 9.0 10^(-3) atm or higher onto the substrate, and growing an AlN crystal in the -C-axis direction on the substrate, where a growth temperature for the AlN crystal is 1400C or higher.

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