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Kawasaki, Japan

A method of producing a polyimide resin that produces a polyimide resin having excellent heat resistance and mechanical properties, and having a low dielectric constant even when heat-treated at a lower temperature. The method includes heating at 120 C. to 350 C. a polyamic acid resulting from the reaction of a tetracarboxylic acid dianhydride component and a diamine component in a solvent including at least a compound represented by the general formula (1), in which R


Patent
Tokyo Ohka Kogyo | Date: 2015-10-01

A method for manufacturing a semiconductor substrate. An impurity diffusion ingredient can be diffused well and uniformly from a coating film into a semiconductor substrate by forming a coating film having a thickness of not more than 30 nm on a surface of a semiconductor substrate with a diffusion agent composition containing an impurity diffusion ingredient and a silicon compound that can be hydrolyzed to produce a silanol group.


A method of producing a structure containing a phase-separated structure, including a step in which a layer including an Si-containing block copolymer having a plurality of blocks bonded is formed between guide patterns on a substrate; a step in which a solution of a top coat material is applied to the layer and the guide patterns so as to form a top coat film; and a step in which the layer including the Si-containing block copolymer and having the top coat film formed thereon is subjected to annealing treatment so as to conduct a phase separation of the layer; in which a solvent of the solution of the top coat material contains no basic substance.


Patent
Tokyo Ohka Kogyo | Date: 2015-10-05

A method of trimming a resist pattern, including forming a positive resist film on a substrate, the positive resist film is exposed and the positive resist film is subjected to an alkali development to form a first resist pattern having an alkali-insoluble region on the surface thereof; applying a resist trimming composition including an acid to the substrate on which the first resist pattern is formed; a heating the first resist pattern coated with the resist trimming composition, and the solubility of the first resist pattern in a developing solution is changed under action of the acid included in the resist trimming composition; and developing the first resist pattern after heating with an organic solvent to remove the alkali-insoluble region of the first resist pattern, the resist trimming composition including the acid and a solvent which does not dissolve the first resist pattern.


A method of purifying a liquid chemical for semiconductor photolithography including filtering a liquid chemical using a filter unit, and setting a temperature of the liquid chemical passing through at least the filter unit to be lower than room temperature. The temperature which is lower than room temperature is preferably 25 C.

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