Tokyo Ohka Kogyo | Date: 2015-02-18
A method of producing a polyimide resin that produces a polyimide resin having excellent heat resistance and mechanical properties, and having a low dielectric constant even when heat-treated at a lower temperature. The method includes heating at 120 C. to 350 C. a polyamic acid resulting from the reaction of a tetracarboxylic acid dianhydride component and a diamine component in a solvent including at least a compound represented by the general formula (1), in which R
Tokyo Ohka Kogyo | Date: 2015-10-01
A method for manufacturing a semiconductor substrate. An impurity diffusion ingredient can be diffused well and uniformly from a coating film into a semiconductor substrate by forming a coating film having a thickness of not more than 30 nm on a surface of a semiconductor substrate with a diffusion agent composition containing an impurity diffusion ingredient and a silicon compound that can be hydrolyzed to produce a silanol group.
Tokyo Ohka Kogyo | Date: 2015-01-22
A method of producing a structure containing a phase-separated structure, including a step in which a layer including an Si-containing block copolymer having a plurality of blocks bonded is formed between guide patterns on a substrate; a step in which a solution of a top coat material is applied to the layer and the guide patterns so as to form a top coat film; and a step in which the layer including the Si-containing block copolymer and having the top coat film formed thereon is subjected to annealing treatment so as to conduct a phase separation of the layer; in which a solvent of the solution of the top coat material contains no basic substance.
Tokyo Ohka Kogyo | Date: 2015-10-05
A method of trimming a resist pattern, including forming a positive resist film on a substrate, the positive resist film is exposed and the positive resist film is subjected to an alkali development to form a first resist pattern having an alkali-insoluble region on the surface thereof; applying a resist trimming composition including an acid to the substrate on which the first resist pattern is formed; a heating the first resist pattern coated with the resist trimming composition, and the solubility of the first resist pattern in a developing solution is changed under action of the acid included in the resist trimming composition; and developing the first resist pattern after heating with an organic solvent to remove the alkali-insoluble region of the first resist pattern, the resist trimming composition including the acid and a solvent which does not dissolve the first resist pattern.
Method Of Purifying Liquid Chemical For Semiconductor Photolithography, Purification Device Of Liquid Chemical For Semiconductor Photolithography, And Liquid Chemical For Semiconductor Photolithography
Tokyo Ohka Kogyo | Date: 2015-09-24
A method of purifying a liquid chemical for semiconductor photolithography including filtering a liquid chemical using a filter unit, and setting a temperature of the liquid chemical passing through at least the filter unit to be lower than room temperature. The temperature which is lower than room temperature is preferably 25 C.