Tokyo Institute of TechnologyNagatsuta 4259 J2 69Midoriku
Takei Y.,Tokyo Institute of TechnologyNagatsuta 4259 J2 69Midoriku |
Kamiya M.,Tokyo Institute of TechnologyNagatsuta 4259 J2 69Midoriku |
Tsutsui K.,Tokyo Institute of TechnologyNagatsuta 4259 J2 69Midoriku |
Saito W.,Toshiba Corporation |
And 4 more authors.
Physica Status Solidi (A) Applications and Materials Science | Year: 2015
A new technique to reduce contact resistance on AlGaN/GaN HEMTs was proposed. This method introduced uneven AlGaN layer structures. 2D device simulations revealed a clear increase in two-dimensional electron gas (2DEG) concentration near the edge regions where the AlGaN layer thickness fluctuated. This fringing effect is useful because metal and high-density 2DEG can approach each other, overcoming an inherent tradeoff involving the AlGaN layer thickness. Experiments demonstrated the effectiveness of this technique, in which contact resistances obtained on some structures with uneven AlGaN layers were lower than the lowest limit for conventional flat AlGaN structures. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.