Tokyo Institute of Technology

www.titech.ac.jp/
Tokyo, Japan

Tokyo Institute of Technology is a national top-tier research university located in Greater Tokyo Area, Japan. Tokyo Tech is the largest institution for higher education in Japan dedicated to science and technology. Tokyo Tech enrolled 4,850 undergraduates and 5,006 graduate students for 2009–2010. It employs around 1,400 faculty members.Tokyo Tech's main campus is located at Ōokayama on the boundary of Meguro and Ota, with its main entrance facing the Ōokayama Station. Other campuses are located in Nagatsuta and Tamachi. Tokyo Tech is organised into 6 schools, within which there are over 40 departments and research centres.Operating the world-class supercomputer Tsubame 2.0, and taking a breakthrough in high-temperature superconductivity, Tokyo Tech is a major centre for supercomputing technology and condensed matter research in the world.Tokyo Tech is a member of LAOTSE, an international network of leading universities in Europe and Asia exchanging students and senior scholars. In 2011 it celebrated the 130th anniversary of its founding. Wikipedia.


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Patent
Canon Kabushiki Kaisha, Tokyo Institute of Technology, Japan Science and Technology Agency | Date: 2017-01-10

A novel amorphous oxide applicable, for example, to an active layer of a TFT is provided. The amorphous oxide comprises microcrystals.


Patent
Tokyo Institute of Technology, Japan Science and Technology Agency | Date: 2016-12-19

If a conductive mayenite compound having a large specific surface area is obtained, the usefulness thereof in respective applications is remarkably increased. A conductive mayenite compound powder having a conduction electron density of 10^(15 )cm^(3 )or more and a specific surface area of 5 m^(2)g^(1 )or more is produced by: the following steps: (1) forming a precursor powder by subjecting a mixture of a starting material powder and water to a hydrothermal treatment; (2) forming a mayenite compound powder by heating and dehydrating the precursor powder; (3) forming an activated mayenite compound powder by heating the compound powder in an inert gas atmosphere or in a vacuum; and (4) injecting electrons into the mayenite compound through a reduction treatment by mixing the activated mayenite compound powder with a reducing agent.


Patent
Tokyo Institute of Technology and Toyota Motor Corporation | Date: 2017-05-03

The main object of the present invention is to provide a sulfide solid electrolyte material with favorable ion conductivity and resistance to reduction. To achieve the above object, the present invention provides a sulfide solid electrolyte material comprising a peak at a position of 2 = 29.86 1.00 in X-ray diffraction measurement using a CuK ray, and a composition of Li_(2y+3)PS_(4) (0.1 y 0.175).


Patent
Hitachi Ltd. and Tokyo Institute of Technology | Date: 2017-05-17

Provided herein are an austenite steel that satisfies desirable strength and desirable castability at the same time, and an austenite steel casting using same. The austenite steel according to an embodiment of the present invention contains Ni: 25 to 50%, Nb: 3.8 to 6.0%, B: 0.001 to 0.05%, Cr: 12 to 25%, Ti: 1.6% or less, Mo: 4.8% or less, and W: 5.2% or less in mass%, and the balance Fe and unavoidable impurities, wherein the parameter Ps represented by the following formula (1) satisfies Ps 38,


The problem addressed by the present invention is to develop a pharmaceutical having therapeutic efficacy against epirubicin-resistant tumors. The present invention provides a micelle having an anti-cancer agent disposed inside the core of the micelle formed by an epirubicin-conjugated copolymer.


Patent
Japan Science, Technology Agency, Tokyo Institute of Technology and Asahi Glass Co. | Date: 2017-03-16

A thin film of metal oxide includes zinc (Zn); tin (Sn); silicon (Si); and oxygen (O). In terms of oxide, based on 100 mol % of total of oxides of the thin film, SnO_(2 )is greater than 15 mol % but less than or equal to 95 mol %.


Patent
Japan Science, Technology Agency, Tokyo Institute of Technology and Asahi Glass Co. | Date: 2017-03-16

A light-emitting device includes a pair of first electrodes arranged separated from and opposing each other on a first surface of a substrate; a light-emitting layer arranged on at least one of the first electrodes; a second electrode arranged on the light-emitting layer; and a bridge layer connecting the first electrodes. The bridge layer is formed of a material having a resistance that falls within a range of 100 k to 100 M.


Patent
Daikin Industries Ltd and Tokyo Institute of Technology | Date: 2017-07-12

A brain activity estimation device (10) is provided with a facial skin temperature acquisition means (20) and a brain activity estimation means (30). The facial skin temperature acquisition means (20) detects skin temperature in at least part of a human face, and acquires facial skin temperature data in a time series manner. The facial skin temperature data includes detected temperature data and location data of the detection region thereof. On the basis of the facial skin temperature data acquired by the facial skin temperature acquisition means (20), the brain activity estimation means (30) estimates the human brain activity. The brain activity estimation means (30) decomposes the facial skin temperature data into a plurality of components by singular value decomposition, principal component analysis, or independent component analysis. The brain activity estimation means (30) extracts a component as a determination component from among the plurality of components. The component has the amplitude of the component waveform thereof is correlated to a change at a time when the brain is at rest and a time when the brain is stimulated. The brain activity estimation means (30) determines whether the determination component is related to the human brain activity on the basis of the presence or absence of a temperature change in a prescribed region of a human face.


Patent
Tokyo Institute of Technology and Olympus Corporation | Date: 2017-04-05

An image processing unit has an image acquisition part, a correlation determination part, a reference image generation part, and an interpolation image generation part. The image acquisition part acquires an original image. The correlation determination unit determines whether the correlation of an image component of a primary reference band with image components of respective bands other than the primary reference band is either high correlation or low correlation. The reference image generation part interpolates missing pixels in the image component of the primary reference band by switching the interpolation method based on the correlation determination result obtained by the correlation determination part. The interpolation image generation part interpolates, using the correlation determination result and the primary reference image, missing pixels in at least some of the image component of the primary reference band.


Patent
Tokyo Institute of Technology and Toyota Jidosha Kabushiki Kaisha | Date: 2017-02-07

A main object of the present disclosure is to provide a sulfide solid electrolyte material with favorable Li ion conductivity. To achieve the above object, the present disclosure provides a sulfide solid electrolyte material comprising a composition of Li_((4+x))Al_(x)Si_((1x))S_(4 )(0

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