Tokyo, Japan

Tokyo Institute of Technology is a national top-tier research university located in Greater Tokyo Area, Japan. Tokyo Tech is the largest institution for higher education in Japan dedicated to science and technology. Tokyo Tech enrolled 4,850 undergraduates and 5,006 graduate students for 2009–2010. It employs around 1,400 faculty members.Tokyo Tech's main campus is located at Ōokayama on the boundary of Meguro and Ota, with its main entrance facing the Ōokayama Station. Other campuses are located in Nagatsuta and Tamachi. Tokyo Tech is organised into 6 schools, within which there are over 40 departments and research centres.Operating the world-class supercomputer Tsubame 2.0, and taking a breakthrough in high-temperature superconductivity, Tokyo Tech is a major centre for supercomputing technology and condensed matter research in the world.Tokyo Tech is a member of LAOTSE, an international network of leading universities in Europe and Asia exchanging students and senior scholars. In 2011 it celebrated the 130th anniversary of its founding. Wikipedia.


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Patent
Tokyo Institute of Technology | Date: 2017-01-25

This power converter is provided with: three clusters (CLu, CLv, CLw) in which unit cells are cascade-connected; and power supplies of the same kind which are respectively connected to one end of each of the three clusters. Terminals of the three clusters at the side not connected to the power supplies are respectively connected to other ends of the power supplies connected to the other clusters to form a delta-connection configuration. Three connections of the delta-connection configuration are respectively connected to each of the U, V, and W phases of a three-phase alternating current, and power conversion between the power supplies and the three-phase AC is enabled. If DC power supplies (Vdcu, Vdcv, Vdcw) are employed as the power supplies, power conversion between the DC power supplies and the three-phase AC power supplies can be performed. If in-phase single-phase AC power supplies are employed as the power supplies, power conversion between either the single-phase AC power supplies and the three-phase AC power supplies, or the three-phase AC power supplies can be performed.


There is provided a labeling precursor compound represented by the following general formula (2):_(1) represents an alkynyl group, an alkynyloxy group, an azide group, an azidoalkyl group, an arylazide group, a monocyclic or condensed polycyclic aryl group or a nitrogen-containing heterocycle; R_(2) and R_(3) each independently represent an alkyl group or a hydroxyalkyl group which hydroxy group may be protected with a protecting group, and n is an integer of 1 or 2; R_(6) represents an alkyl group or -CONR_(11)R_(12) wherein R_(11) and R_(12) each independently represent an alkyl group or a monocyclic or condensed polycyclic aryl group; and R_(4), R_(5), R_(7) and R_(8) each independently represent a hydrogen atom, an alkyl group or an alkoxy group.


Patent
Tokyo Institute of Technology and Nippon Oil Corporation | Date: 2017-02-22

[Problem] Provided is a film for a transparent screen which can clearly display merchandise information, advertisement, or the like on a transparent partition or the like by projection without compromising the transmission visibility. [Solving means] A film for a transparent screen according to the present invention includes: a resin layer; and inorganic particles at least a portion of which is contained in an aggregated state in the resin layer, wherein primary particles of the inorganic particles have a median diameter of 0.1 to 50 nm and a maximum particle size of 10 to 500 nm, and the content of the inorganic particles is 0.015 to 1.2% by mass with respect to the resin.


Patent
Japan Science, Technology Agency and Tokyo Institute of Technology | Date: 2017-01-11

The invention related to a material that can stably hold an imide anion (NH_(2)^(-)) therein even in the atmosphere or in a solvent, and a method for synthesizing the material and a use of the material. A mayenite-type compound into which imide anions are incorporated at a concentration of 1 10^(18) cm^(-3) or more are provided. The mayenite-type compound can be produced by heating a mayenite-type compound including electrons or free oxygen ions in a cage thereof, in liquefied ammonia at 450 to 700C and at a pressure of 30 to 100 MPa. The compound has properties such that active imide anions can be easily incorporated into the compound and the active imide anions can be easily released in the form of ammonia from the compound, and the compound has chemical stability.


Patent
Hitachi Ltd. and Tokyo Institute of Technology | Date: 2016-11-11

Provided herein are an austenite steel that satisfies desirable strength and desirable castability at the same time, and an austenite steel casting using same. The austenite steel according to an embodiment of the present invention contains Ni: 25 to 50%, Nb: 3.8 to 6.0%, Zr: 0.5% or less, B: 0.001 to 0.05%, Cr: 12 to 25%, Ti: 1.6% or less, Mo: 4.8% or less, and W: 5.2% or less in mass %, and the balance Fe and unavoidable impurities, wherein the parameter Ps represented by the following formula (1) satisfies Ps38, Ps=8.3[Nb]7.5[Ti]+2.4[Mo]+3.5[W]formula (1), where [Nb], [Ti], [Mo], and [W] represent the contents of Nb, Ti, Mo, and W, respectively, in mass %.


Patent
NEC Corp and Tokyo Institute of Technology | Date: 2016-07-11

A method for manufacturing zinc oxide films according to the present invention includes: a step (Step 1) for mixing zinc salt, aqueous ammonia, and organic acid to prepare a source solution containing a zinc ammine complex; a step (Step 2) for depositing a zinc oxide film on a substrate using the source solution by a liquid phase deposition method; and a step (Step 3) for irradiating the deposited zinc oxide film with UV light to remove the organic acid from the deposited zinc oxide film. The present invention can provide a method for manufacturing zinc oxide films that can simplify a device configuration of a manufacturing device.


Patent
Canon Kabushiki Kaisha, Tokyo Institute of Technology, Japan Science and Technology Agency | Date: 2017-01-10

A novel amorphous oxide applicable, for example, to an active layer of a TFT is provided. The amorphous oxide comprises microcrystals.


Patent
Tokyo Institute of Technology, Japan Science and Technology Agency | Date: 2016-12-19

If a conductive mayenite compound having a large specific surface area is obtained, the usefulness thereof in respective applications is remarkably increased. A conductive mayenite compound powder having a conduction electron density of 10^(15 )cm^(3 )or more and a specific surface area of 5 m^(2)g^(1 )or more is produced by: the following steps: (1) forming a precursor powder by subjecting a mixture of a starting material powder and water to a hydrothermal treatment; (2) forming a mayenite compound powder by heating and dehydrating the precursor powder; (3) forming an activated mayenite compound powder by heating the compound powder in an inert gas atmosphere or in a vacuum; and (4) injecting electrons into the mayenite compound through a reduction treatment by mixing the activated mayenite compound powder with a reducing agent.


Patent
Tokyo Institute of Technology and Toyota Motor Corporation | Date: 2017-05-03

The main object of the present invention is to provide a sulfide solid electrolyte material with favorable ion conductivity and resistance to reduction. To achieve the above object, the present invention provides a sulfide solid electrolyte material comprising a peak at a position of 2 = 29.86 1.00 in X-ray diffraction measurement using a CuK ray, and a composition of Li_(2y+3)PS_(4) (0.1 y 0.175).


Patent
Hitachi Ltd. and Tokyo Institute of Technology | Date: 2017-05-17

Provided herein are an austenite steel that satisfies desirable strength and desirable castability at the same time, and an austenite steel casting using same. The austenite steel according to an embodiment of the present invention contains Ni: 25 to 50%, Nb: 3.8 to 6.0%, B: 0.001 to 0.05%, Cr: 12 to 25%, Ti: 1.6% or less, Mo: 4.8% or less, and W: 5.2% or less in mass%, and the balance Fe and unavoidable impurities, wherein the parameter Ps represented by the following formula (1) satisfies Ps 38,

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