Tokyo, Japan
Tokyo, Japan

Tokyo Electron Limited , or TEL, is a Japanese electronics and semiconductor company headquartered in Akasaka, Minato-ku, Tokyo, Japan.TEL is best known as a supplier of equipment to fabricate integrated circuits , flat panel displays , and photovoltaic cells . Tokyo Electron Device , or TED, is a subsidiary of TEL specializing in semiconductor devices, electronic components, and networking devices.As of 2011, TEL is the largest manufacturer of IC and FPD production equipment in Japan and the third largest in the world. The company was founded as Tokyo Electron Laboratories, Inc. in 1963.On September 24, 2013 Tokyo Electron and Applied Materials announced a merger. If approved by government regulators, the combined company, to be called Eteris, would be the world's largest supplier of semiconductor processing equipment, with a total market value of approximately $29 billion. Wikipedia.

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Patent
Tokyo Electron | Date: 2016-11-14

Embodiments of the invention provide a method for treating a microelectronic substrate with dilute TMAH. In the method, a microelectronic substrate is received into a process chamber, the microelectronic substrate having a layer, feature or structure of silicon. A treatment solution is applied to the microelectronic substrate to etch the silicon, where the treatment solution includes a dilution solution and TMAH. A controlled oxygen content is provided in the treatment solution or in an environment in the process chamber to achieve a target etch selectivity of the silicon, or a target etch uniformity across the layer, feature or structure of silicon, or both by the treatment solution.


Patent
Tokyo Electron | Date: 2016-11-09

A processing apparatus includes a processing container, a manifold having an injector supporting part, the injector supporting part being disposed at a lower end of the processing container, extending along an inner wall surface in the processing container and having an insertion hole, and a gas introduction part having a gas flow passage within the gas introduction part to communicate with the insertion hole and an outside of the processing container so that a gas flows in the gas flow passage, an injector inserted and fixed into the insertion hole, the injector entirely extending in a linear manner along the wall surface and having an opening communicating with the gas flow passage at a location where the injector is inserted into the insertion hole, and a gas supplying pipe communicating with and connected to an outer end of the gas flow passage of the gas introduction part.


A substrate processing system includes a film-forming device to form photosensitive film on substrate, an exposure device to expose the film on the substrate, a relay device to transfer the substrate between the film-forming and exposure devices, a warping data acquisition device to acquire measured warping data of the substrate, a communication device to perform data communication with the exposure device, and a control device including film-forming, relay, measuring, and communication control sub-devices. The film-forming sub-device controls the film-forming device to form the film on the substrate, the relay sub-device controls the relay device to transfer the substrate to the exposure device, the measuring sub-device controls the warping data acquisition device to acquire the data after the controlling by the film-forming sub-device prior to the controlling by the relay sub-device, and the communication sub-device controls the communication device to transmit the data to the exposure device.


Provided is a method of plasma etching on a substrate using an etchant gas mixture to meet integration objectives, the method comprising: disposing a substrate having a structure pattern layer, a neutral layer, and an underlying layer, the structure pattern layer comprising a first material and a second material and the underlying layer comprising a silicon anti-reflective (SiARC) layer, a spin-on carbon hardmask (CHM) layer, an oxide layer, and a target layer; performing an first etch process to selectively remove the second material and the neutral layer using a first etchant gas mixture to form a first pattern; performing an second etch process to selectively remove the SiARC layer to form a second pattern; performing an third etch process to selectively remove the CHM layer to form a third pattern; concurrently controlling selected two or more operating variables wherein the first etchant gas include oxygen and sulfur-containing gases.


Patent
Tokyo Electron | Date: 2016-11-15

An advanced optical sensor and method for detection of optical events in a plasma processing system. The method includes detecting at least one light emission signal in a plasma processing chamber. The at least one detected light emission signal including light emissions from an optical event. The method further includes processing the at least one light emission signal and detecting a signature of the optical event from the processed light emission signal.


Patent
Tokyo Electron | Date: 2016-11-15

There is provided an etching method for etching an antireflection film including silicon according to a pattern of a resist film by using plasma processing with respect to a processing object, the processing object including an etching object film, the antireflection film including silicon laminated on the etching object film, and the resist film laminated on the antireflection film including silicon. The method includes generating plasma of a processing gas containing a fluorocarbon gas in a processing chamber, the processing object being disposed in the processing chamber, and generating plasma of a processing gas containing an inactive gas in the processing chamber, the processing object being disposed in the processing chamber. A set of the first generating and the second generating are repeatedly performed.


A method of forming a coating film includes horizontally supporting a substrate, supplying a coating solution to a central portion of the substrate and spreading the coating solution by a centrifugal force by rotating the substrate at a first rotational speed, decreasing a speed of the substrate from the first rotational speed toward a second rotational speed and rotating the substrate at the second rotational speed to make a surface of a liquid film of the coating solution even, supplying a gas to a surface of the substrate when the substrate is rotated at the second rotational speed to reduce fluidity of the coating solution, and drying the surface of the substrate by rotating the substrate at a third rotational speed faster than the second rotational speed.


There is provided a wafer boat support table that supports a wafer boat having a plurality of posts from below, the plurality of posts being configured to arrange and support a plurality of wafers at intervals in a vertical direction, the wafer boat support table including: a plurality of support points installed on each of linear lines defined by connecting a center of the wafer boat and the plurality of posts and configured to support a bottom surface of the wafer boat while being brought into contact with the bottom surface of the wafer boat.


Patent
Tokyo Electron | Date: 2017-02-08

A plasma etching apparatus includes an upper electrode (34) and a lower electrode (16), between which plasma of a process gas is generated to perform plasma etching on a wafer (W). The apparatus further comprises a variable DC power supply (50) to apply a DC voltage to the upper electrode (34), so as to cause the absolute value of a self-bias voltage V_(dc) on the surface thereof to be large enough to obtain a suitable sputtering effect on the surface, and to increase the plasma sheath length on the upper electrode (34) side to generate predetermined pressed plasma.


Patent
Tokyo Electron | Date: 2017-09-27

In a film-forming apparatus, a rotary shaft is connected to a rotary stage. A plurality of wafers are placed in a plurality of placement regions arranged in a circumferential direction with respect to a central axis line of the rotary shaft and is held by the rotary stage. The rotary stage is accommodated in an internal space of a susceptor. In this internal space, a gas supply mechanism generates a process gas flow along a direction orthogonal to the axis line from the outside of the rotary stage. A heat insulating material is installed in a heat insulating region in the internal space of the susceptor. The heat insulating region is located more outwardly from the axis line than positions in the placement regions nearest to the central axis line and more inwardly from the central axis line than positions in the placement regions farthest from the axis line.

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