Tokyo, Japan
Tokyo, Japan

Tokyo Electron Limited , or TEL, is a Japanese electronics and semiconductor company headquartered in Akasaka, Minato-ku, Tokyo, Japan.TEL is best known as a supplier of equipment to fabricate integrated circuits , flat panel displays , and photovoltaic cells . Tokyo Electron Device , or TED, is a subsidiary of TEL specializing in semiconductor devices, electronic components, and networking devices.As of 2011, TEL is the largest manufacturer of IC and FPD production equipment in Japan and the third largest in the world. The company was founded as Tokyo Electron Laboratories, Inc. in 1963.On September 24, 2013 Tokyo Electron and Applied Materials announced a merger. If approved by government regulators, the combined company, to be called Eteris, would be the world's largest supplier of semiconductor processing equipment, with a total market value of approximately $29 billion. Wikipedia.


Time filter

Source Type

According to an embodiment of the present disclosure, a process liquid supply apparatus operating method is provided. The method includes filling a filter unit with a process liquid from an upstream side of the filter unit to a downstream side of the filter unit after newly mounting or replacing the filter unit and repeating a depressurization filtering process and a pressurization filtering process for a predetermined number of times. The depressurization filtering process depressurizes the process liquid in the downstream side of the filter unit and thereby allows the process liquid to permeate through the filter unit. The pressurization filtering process pressurizes the process liquid from the upstream side of the filter unit and thereby allows the process liquid to permeate through the filter unit.


Patent
Tokyo Electron | Date: 2017-02-08

A plasma etching apparatus includes an upper electrode (34) and a lower electrode (16), between which plasma of a process gas is generated to perform plasma etching on a wafer (W). The apparatus further comprises a variable DC power supply (50) to apply a DC voltage to the upper electrode (34), so as to cause the absolute value of a self-bias voltage V_(dc) on the surface thereof to be large enough to obtain a suitable sputtering effect on the surface, and to increase the plasma sheath length on the upper electrode (34) side to generate predetermined pressed plasma.


Patent
Tokyo Electron | Date: 2017-02-15

A cell separation device (140) imparts oscillation from a back-face side to a cell culture film (77) to which cells adhere to the surface thereof and thereby separates a cell from the cell culture film (77). The cell separation device (140) is provided with an ultrasonic probe (141) having an oscillator (141 a) for ultrasonically oscillating, a frame (142) disposed so as to surround the oscillator (141a), and a first detection unit (143) for detecting a force applied to the frame (142) in a predetermined direction. The oscillator (141a) imparts ultrasonic oscillation selectively to a predetermined cell adhering to the surface of the cell culture film (77). The frame (142) is pushed in until the force applied to the frame (142) from the back face of the cell culture film (77) reaches a predetermined magnitude on the basis of the result of detection by the first detection unit (143), and the oscillator (141a) then ultrasonically oscillates in a state in which the frame (142) abuts the back face of the cell culture film (77).


Patent
Tokyo Electron | Date: 2017-03-29

A mounting table includes a cooling table, a power feed body, an electrostatic chuck, a first elastic member and a clamping member. The power feed body is connected to the cooling table to transmit a high frequency power. A base of the electrostatic chuck has conductivity. An attraction unit has an attraction electrode and a heater therein, and is fastened to the base by metal bonding. The first elastic member is provided between the cooling table and the base to allow the electrostatic chuck to be spaced apart from the cooling table. The first elastic member forms, along with the cooling table and the base, a heat transfer space into which a heat transfer gas is supplied. The clamping member is contacted with the cooling table and the base, and allows the base and the first elastic member to be interposed between the cooling table and the clamping member.


Patent
Tokyo Electron | Date: 2017-04-05

Provided is a measurement device, including: a droplet forming part configured to form aerosol-like liquid droplets from a liquid in which a fluorescent substance specifically bondable to detection target particles and a specimen are mixed with each other; a droplet sorting part configured to sort droplets having a diameter smaller than a predetermined value from the droplets formed by the droplet forming part; and a measurement part configured to irradiate light onto the droplets sorted by the droplet sorting part and configured to measure the fluorescence intensity of the droplets.


A chemically amplified resist material of the present invention is used in a process including: patternwise exposing a predetermined region of resist material film to ionizing radiation or nonionizing radiation; floodwise exposing the resist material film patternwise exposed to nonionizing radiation; baking the resist material film floodwise exposed; and developing resist material film to form a resist pattern, the chemically amplified resist material containing: (1) base component; and (2) a component that is capable of generating a radiation-sensitive sensitizer and an acid upon an exposure, wherein the component (2) contains, among (a) a radiation-sensitive acid-and-sensitizer generating agent, (b) a radiation-sensitive sensitizer generating agent, and (c) a radiation-sensitive acid generating agent: the components (a) and (b); the components (b) and (c); or all of the components (a) to (c), and wherein the component (b) contains a compound represented by formula (A).


Patent
Osaka University and Tokyo Electron | Date: 2017-02-22

A chemically amplified resist material is used in a process including: patternwise exposing a predetermined region of a resist material film to a first radioactive ray that is ionizing radiation or nonionizing radiation; floodwise exposing the resist material film to a second radioactive ray that is nonionizing radiation; baking the resist material film; and developing the resist material film to form a resist pattern, the chemically amplified resist material containing (1) a base component that is capable of being made soluble or insoluble in a developer solution by an action of an acid and (2) a component that is capable of generating a radiation-sensitive sensitizer and an acid upon an exposure, wherein the component (2) contains a component (a), any two among components (a) to (c), or all of components (a) to (c), wherein a van der Waals volume of the acid generated from the component (2) is no less than 3.0 x 10^(-28) m^(3)_(.)


Patent
Tokyo Electron | Date: 2017-04-05

A measurement device includes: a capturing part for causing a liquid to capture detection target particles contained in a gas and causing a fluorescent substance specifically bondable to the detection target particles to be bonded to the detection target particles; a droplet forming part for forming aerosol-like droplets from the liquid; and a measurement part for irradiating light onto the droplets and measuring the fluorescence intensity of the droplets. The capturing part includes a cyclone which swirls the gas introduced from a gas introduction part in a circumferential direction, separates the detection target particles toward a wall surface of the cyclone body under a centrifugal force, introduces the liquid from the liquid introduction part, causes the liquid to capture the detection target particles separated toward the wall surface and continuously supplies the liquid to the droplet forming part.


Patent
Tokyo Electron | Date: 2017-04-19

A sealed container includes a container body having an opening, a lid removably installed in the opening of the container body, and a first seal member installed to seal a gap between the container body and the lid. A locking hole is formed in an inner peripheral portion of the container body. A first opening capable of facing the locking hole is formed in an outer peripheral portion of the lid. A second opening communicating with the first opening is formed in an end portion of the lid. The lid includes a locking member that can linearly move to protrude from and retract into the first opening, a rotatable rotary member positioned to face the second opening, a conversion mechanism configured to covert rotational motion of the rotary member to linear motion of the locking member, and a second seal member installed to seal the second opening.


Grant
Agency: Cordis | Branch: H2020 | Program: ECSEL-IA | Phase: ECSEL-02-2014 | Award Amount: 139.30M | Year: 2015

The proposed pilot line project WAYTOGO FAST objective is to leverage Europe leadership in Fully Depleted Silicon on Insulator technology (FDSOI) so as to compete in leading edge technology at node 14nm and beyond preparing as well the following node transistor architecture. Europe is at the root of this breakthrough technology in More Moore law. The project aims at establishing a distributed pilot line between 2 companies: - Soitec for the fabrication of advanced engineered substrates (UTBB: Ultra Thin Body and BOx (buried oxide)) without and with strained silicon top film. - STMicroelectronics for the development and industrialization of state of the art FDSOI technology platform at 14nm and beyond with an industry competitive Power-Performance-Area-Cost (PPAC) trade-off. The project represents the first phase of a 2 phase program aiming at establishing a 10nm FDSOI technology for 2018-19. A strong added value network is created across this project to enhance a competitive European value chain on a European breakthrough and prepare next big wave of electronic devices. The consortium gathers a large group of partners: academics/institutes, equipment and substrate providers, semiconductor companies, a foundry, EDA providers, IP providers, fabless design houses, and a system manufacturer. E&M will contribute to the objective of installing a pilot line capable of manufacturing both advanced SOI substrates and FDSOI CMOS integrated circuits at 14nm and beyond. Design houses and electronics system manufacturer will provide demonstrator and enabling IP, to spread the FDSOI technology and establish it as a standard in term of leading edge energy efficient CMOS technology for a wide range of applications battery operated (consumer , healthcare, Internet of things) or not. Close collaboration between the design activities and the technology definition will tailor the PPAC trade-off of the next generation of technology to the applications needs.

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