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Nishi-Tokyo-shi, Japan

Tn Emc Ltd. and Taiyo Nippon Sanso | Date: 2012-01-18

Provided is a vapor phase growth apparatus having a rotation/revolution mechanism by which a rolling member is prevented from riding onto an adjacent rolling member. In a vapor phase growth apparatus having a rotation/revolution structure in which a plurality of substrate retaining members

TN EMC Ltd. and Taiyo Nippon Sanso | Date: 2010-06-11

Disclosed is a rotation/revolution type vapor phase growth apparatus that allows for automatic meshing between an external gear and an internal gear. In the apparatus, on tooth side surfaces of at least one kind of a plurality of external gear members provided rotatably in a circumferential direction of an outer periphery of a disk-shaped susceptor and a ring-shaped fixed internal gear member having an internal gear to mesh with the external gear members, there is provided a guide slope that abuts against a tooth side surface of the other kind of the gear member(s) to guide both kinds of the gear members into a meshed state when both kinds of the gear members move from a non-meshed state to the meshed state.

Tn Emc Ltd. and Taiyo Nippon Sanso | Date: 2013-07-01

The present invention provides a susceptor which is rotatably provided in a chamber and has a plurality of substrate mounting parts, and a substrate on which a thin film is deposited is rotatably mounted on the substrate mounting part, and the susceptor has a disk-shape wherein there is an opening at an inner periphery of the susceptor, into which a rotating shaft to rotate the susceptor is inserted, and the susceptor has a plurality of notches extending in a radial direction at an outer periphery and/or a periphery of said opening.

Tn Emc Ltd. and Taiyo Nippon Sanso | Date: 2012-03-16

The present invention provides a vapor-phase growth apparatus, including: a reaction furnace in which a susceptor is removably installed, and in which vapor-phase growth is conducted; a transport robot which transports the aforementioned susceptor; a glove box which accommodates the pertinent transport robot and the aforementioned reaction furnace; an exchange table which is set up inside the pertinent glove box, and on which a susceptor is temporarily mounted during susceptor replacement; and an exchange box which is provided in a side wall of the aforementioned glove box, and in which susceptor replacement is conducted; and wherein the aforementioned exchange table comprises a positioning device which rotates upon mounting of the aforementioned susceptor, and which determines a position of the aforementioned susceptor in a rotational direction by stopping at a prescribed rotational position.

Ubukata A.,Taiyo Nippon Sanso | Yano Y.,Taiyo Nippon Sanso | Yamaoka Y.,Taiyo Nippon Sanso | Kitamura Y.,Taiyo Nippon Sanso | And 2 more authors.
Physica Status Solidi (C) Current Topics in Solid State Physics | Year: 2013

We have developed a large-scale metal-organic vapor phase epitaxy (MOVPE) reactor. The growth rates of AlN and AlGaN were compared with those calculated using the parasitic chemical reaction model. The calculated results were in good agreement with the experimental results over the entire 8″ wafer. To experimentally investigate the extent of the gas-phase prereaction between the precursors and ammonia, the results of epitaxy were compared with those for a 6″-type reactor. The growth of AlN and AlGaN at relatively high rates without any significant gas-phase prereaction was demonstrated. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. Source

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