Tokyo, Japan
Tokyo, Japan

Time filter

Source Type

Saito Y.,University of Electro - Communications | Kobayashi N.,University of Electro - Communications | Yamamoto J.,TNEMC Ltd. | Ban Y.,TNEMC Ltd. | Matsumoto K.,TNEMC Ltd.
e-Journal of Surface Science and Nanotechnology | Year: 2010

Surface morphological and 10K photoluminescence (PL) spectral changes during photoelectrochemical (PEC) etching for (0001) face of n-GaN on sapphire are reported. The etching is initiated from the step edges and the etch pit density increases to 5 × 1010 cm-2 which is larger than the total dislocation density of GaN sample. Subsequently, the neighboring etch pits are connected to form triangular hillocks which are surrounded by {1120} facets. Then the whisker structure is formed by way of mesh morphology. The whisker density is nearly equal to the dislocation density including edge dislocation (2 × 109 cm-2). The donor-bound exciton peak of as-grown n-GaN redshifts 24 meV by the whisker formation, indicating the relaxation of compressive strain and the contribution of deeper impurity bound excitons. The broad peaks of lower energies than 3.35 eV are enhanced by the whisker formation. © 2010 The Surface Science Society of Japan.


Ubukata A.,Taiyo Nippon Sanso | Yano Y.,Taiyo Nippon Sanso | Shimamura H.,TN EMC Ltd. | Yamaguchi A.,Taiyo Nippon Sanso | And 2 more authors.
Journal of Crystal Growth | Year: 2013

In this study, we investigated the effects of growth pressure on incorporation of carbon in GaN and on the growth rate of AlGaN using a multiwafer (7 x 6 in.) mass-production metal-organic vapor phase epitaxy (MOVPE) reactor. In the two-dimensional electron gas (2DEG) region of an AlGaN/GaN high electron-mobility transistor (HEMT) structure, a high GaN purity is required. The incorporation of carbon in GaN could be easily controlled over a carbon concentration range of three orders of magnitude by varying pressure. Thus, the reactor can be used for growth at both reduced pressure and atmospheric pressure. Furthermore, an AlGaN growth rate of over 1 μm/h was demonstrated for Al composition in the range of 0.3-0.8 by suppressing the gas-phase prereaction between the precursor materials. An AlGaN/GaN HEMT structure was also demonstrated. The magnitude of wafer bowing was less than 50 μm. The full widths at half maximum (FWHMs) of the X-ray rocking curve (XRC) of GaN were 570″ in the GaN (002) direction and 760″ in the GaN (102) direction. The sheet carrier density and Hall mobility were 1.056 × 1013 cm-2 and 1550 cm2/V s, respectively. © 2012 Elsevier B.V. All rights reserved.


Ubukata A.,Taiyo Nippon Sanso | Yano Y.,Taiyo Nippon Sanso | Yamaoka Y.,Taiyo Nippon Sanso | Kitamura Y.,Taiyo Nippon Sanso | And 2 more authors.
Physica Status Solidi (C) Current Topics in Solid State Physics | Year: 2013

We have developed a large-scale metal-organic vapor phase epitaxy (MOVPE) reactor. The growth rates of AlN and AlGaN were compared with those calculated using the parasitic chemical reaction model. The calculated results were in good agreement with the experimental results over the entire 8″ wafer. To experimentally investigate the extent of the gas-phase prereaction between the precursors and ammonia, the results of epitaxy were compared with those for a 6″-type reactor. The growth of AlN and AlGaN at relatively high rates without any significant gas-phase prereaction was demonstrated. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.


Matsumoto K.,TN EMC Ltd. | Ubukata A.,Taiyo Nippon Sanso | Ikenaga K.,Taiyo Nippon Sanso | Naito K.,Taiyo Nippon Sanso | And 6 more authors.
Proceedings of SPIE - The International Society for Optical Engineering | Year: 2012

Throughput requirement of the epitaxial process of GaN on Si is described. The impact of the growth rate of AlGaN for the buffer layer of GaN on Si is highlighted. In the attempt of growing GaN on Si, we have tested a production scale high flow speed MOVPE reactor (TAIYO NIPPON SANSO UR25k) for 6 inch X 7 wafers. Al 0.58Ga 0.42N was grown with the growth rate of 1.85μm/hr at 30 kPa. AlN was grown with the growth rate of 1.4μm/hr at 13kPa. AlN/GaN SLS (5nm/20nm) was also grown at the growth rate of 1.4μm/hr. An excellent uniformity of aluminum concentration of less than 0.5% was also obtained for Al 0.58Ga 0.42N. The challenge which we are facing to further increase of the throughput is summarized. © 2012 Copyright Society of Photo-Optical Instrumentation Engineers (SPIE).


Yano Y.,Taiyo Nippon Sanso | Tokunaga H.,Taiyo Nippon Sanso | Shimamura H.,TN EMC Ltd. | Yamaoka Y.,Taiyo Nippon Sanso | And 3 more authors.
Japanese Journal of Applied Physics | Year: 2013

It is difficult to control the surface temperature gradient over a bowing GaN on a large-diameter silicon substrate by metal organic chemical vapor deposition (MOCVD) because the wafer bows convexly to store compressive strain during growth. In an attempt to grow uniform AlGaN/GaN on 6-in. (600) silicon substrates using a 7 × 600 reactor, we described in this paper the control of the surface temperature gradient over the wafer and the mass transport at the edge of the wafer. We attempted to grow Al0:23GaN/AlN/GaN/SLS/Al0:5GaN/AlN on six 8-in. (800) silicon substrates using a 6 × 800 reactor. The standard deviations of total thickness were less than 2.0% on wafer and 0.31% wafer to wafer. The growth rate of strained-layer superlattice (SLS) was as high as 2.8 μm/h. The typical electron mobility was 1670 cm2-V≤1-s≤1 at a sheet carrier density of 1:11 × 1013 cm-2. © 2013 The Japan Society of Applied Physics.


Patent
TN EMC Ltd. and Taiyo Nippon Sanso | Date: 2010-05-14

Disclosed is a rotation/revolution type vapor phase growth apparatus capable of increasing the area of a semiconductor thin film that can be vapor-phase grown at a time, without upsizing a susceptor or the like. The vapor phase growth apparatus is a horizontal vapor phase growth apparatus having a rotation/revolution mechanism and includes a bearing member 13 provided in a circular opening formed on a disk-shaped susceptor 12, a soaking plate 14 mounted rotatably on the bearing member, an external gear member 15 mounted on the soaking plate, a ring-shaped fixed internal gear member 17 including an internal gear engaged with the external gear member, a heating unit 19 for heating a substrate 18 retained on the external gear member from a backside of the susceptor, and a flow channel 20 for guiding a raw material gas in a direction parallel to a surface of the substrate. An external diameter of the bearing member or a gear reference circle diameter of the external gear member is smaller than an external diameter of the substrate.


Patent
TN EMC Ltd. and Taiyo Nippon Sanso | Date: 2010-06-11

Disclosed is a rotation/revolution type vapor phase growth apparatus that allows for automatic meshing between an external gear and an internal gear. In the apparatus, on tooth side surfaces of at least one kind of a plurality of external gear members provided rotatably in a circumferential direction of an outer periphery of a disk-shaped susceptor and a ring-shaped fixed internal gear member having an internal gear to mesh with the external gear members, there is provided a guide slope that abuts against a tooth side surface of the other kind of the gear member(s) to guide both kinds of the gear members into a meshed state when both kinds of the gear members move from a non-meshed state to the meshed state.


Patent
Tn Emc Ltd. and Taiyo Nippon Sanso | Date: 2013-07-01

The present invention provides a susceptor which is rotatably provided in a chamber and has a plurality of substrate mounting parts, and a substrate on which a thin film is deposited is rotatably mounted on the substrate mounting part, and the susceptor has a disk-shape wherein there is an opening at an inner periphery of the susceptor, into which a rotating shaft to rotate the susceptor is inserted, and the susceptor has a plurality of notches extending in a radial direction at an outer periphery and/or a periphery of said opening.


Patent
Tn Emc Ltd. and Taiyo Nippon Sanso | Date: 2012-01-18

Provided is a vapor phase growth apparatus having a rotation/revolution mechanism by which a rolling member is prevented from riding onto an adjacent rolling member. In a vapor phase growth apparatus having a rotation/revolution structure in which a plurality of substrate retaining members 21 are rotatably provided in the circumferential direction of the susceptor via a rolling member(ball 22,23) on a susceptor 11, heated by a heating unit as well as is rotated by a driving unit, the substrate retaining member is rotated accompanied by the rotation of the susceptor and a substrate 12 retained by the substrate retaining member is rotated while being revolved with respect to the rotation axis of the susceptor. As for the rolling members, rolling members different diameters (a large diameter ball 22 and a small diameter ball 23) are alternately arranged.


Patent
Tn Emc Ltd. and Taiyo Nippon Sanso | Date: 2012-03-16

The present invention provides a vapor-phase growth apparatus, including: a reaction furnace in which a susceptor is removably installed, and in which vapor-phase growth is conducted; a transport robot which transports the aforementioned susceptor; a glove box which accommodates the pertinent transport robot and the aforementioned reaction furnace; an exchange table which is set up inside the pertinent glove box, and on which a susceptor is temporarily mounted during susceptor replacement; and an exchange box which is provided in a side wall of the aforementioned glove box, and in which susceptor replacement is conducted; and wherein the aforementioned exchange table comprises a positioning device which rotates upon mounting of the aforementioned susceptor, and which determines a position of the aforementioned susceptor in a rotational direction by stopping at a prescribed rotational position.

Loading TN EMC Ltd. collaborators
Loading TN EMC Ltd. collaborators