Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology

Tianjin, China

Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology

Tianjin, China
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Wang Z.,Key Laboratory For Magnetism And Magnetic Materials Of Ministry Of Educationlanzhou Universitylanzhou730000Pr China | Ge S.,Key Laboratory For Magnetism And Magnetic Materials Of Ministry Of Educationlanzhou Universitylanzhou730000Pr China | Yao D.,Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology
Physica Status Solidi (A) Applications and Materials Science | Year: 2014

Ce9Fe91 fi{ligature}lms with different thickness were fabricated by a rf magnetron sputtering method. The critical thickness tc for spin reorientation transition has been determined to be approximately 90nm using the stripe domain model and magnetic force microscope. Above tc, the films exhibit Bloch stripe domain structure and a superhigh resonance frequency at 6GHz is found for the ∥ stripe configuration. However, below tc, the fi{ligature}lms possess an in-plane uniaxial anisotropy caused by order interface tension between the film and substrate, and the resonance frequency breaks through the Snoek limit. © 2014 WILEY-VCH Verlag GmbH & Co.


Liu L.,Tianjin University | Liu L.,Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology | Zhou W.,Tianjin University | Zhou W.,Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology | And 6 more authors.
Microelectronics Reliability | Year: 2010

Electromigration behavior in a one-dimensional Cu/Sn-8Zn-3Bi/Cu solder joint structure was investigated in ambient with a current density of 3.5 × 104 A/cm2 at 60 °C. Due to the compressive stress induced by volume expansion resulting from Cu-Zn intermetallic compound (IMC) growth, Cu5Zn8 IMC layers were squeezed out continuously along IMC/Cu interfaces at both the anode and the cathode with increasing the current stressing time, which was not only driven by the concentration gradient, but also accelerated by the electromigration. And a few voids propagated and formed at the anode and the cathode solder/IMC interfaces during electromigration. Additionally, Sn hillocks occurred in the bulk solder, and Sn hillocks formed at the anode side were larger than those at the cathode side. © 2009 Elsevier Ltd. All rights reserved.


Guo J.,Tianjin University | Guo J.,Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology | Zhou W.,Tianjin University | Zhou W.,Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology | And 7 more authors.
Solid State Communications | Year: 2012

The electronic structural, magnetic and optical properties of pure and V-doped ZnO are investigated by first-principles calculations based on the density functional theory. With the introduction of V atoms, the spin-splitting near the Fermi level leads to a net magnetic moment of the system. A significant possibility of room temperature ferromagnetism (RTFM) originated from the Ruderman-Kittel-Kassuya-Yosida (RKKY) exchange is predicted. Oxygen vacancy is positive to enhance the ferromagnetism while zinc vacancy is negative. With respect to the optical properties, the presence of V atoms was found to have an obvious influence on the transmittivity, especially in the low energy region. A slight V-doping can keep a high optical transmission and smoothly modulate the optical bandgap. © 2012 Elsevier Ltd. All rights reserved.

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