Tianjin Key Laboratory for Photoelectronic Thin Film Devices and Technology

Tianjin, China

Tianjin Key Laboratory for Photoelectronic Thin Film Devices and Technology

Tianjin, China

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Dai X.-W.,Nankai University | Dai X.-W.,Tianjin Key Laboratory for Photoelectronic Thin Film Devices and Technology | Zhang D.-X.,Nankai University | Zhang D.-X.,Tianjin Key Laboratory for Photoelectronic Thin Film Devices and Technology | And 5 more authors.
Rengong Jingti Xuebao/Journal of Synthetic Crystals | Year: 2014

The pyramid structure change on the surface of the monocrystalline silicon textured by different alkaline solutions(NaOH, Na2CO3, NaHCO3, Na2SiO3, Ca(OH)2, CH3COONa) and isopropyl alcohol(IPA) were studied. The surface reflectance was measured by spectrophotometer. The results show that the reflectance of the pyramidal structure is related to the pyramid shape and distribution. The lowest reflectance is 7.8% in the experiment. The cross-section SEM image show that the apex angle of the pyramidal structure maintained around 80° and did not obviously depended on the reaction condition and the size of pyramid. By analysis the relationship between textured silicon surface(SEM images) and its corresponding reflectance, the concept of texturing ratio α and average reflectance Rα were proposed, which can quickly test the texturing ratio of monocrystalline silicon.


Wang F.-Y.,Nankai University | Zhang D.-X.,Nankai University | Zhang D.-X.,Tianjin Key Laboratory for Photoelectronic Thin Film Devices and Technology | Cai H.-K.,Nankai University | And 4 more authors.
Rengong Jingti Xuebao/Journal of Synthetic Crystals | Year: 2014

Back contact barrier of the a-Si:H/c-Si heterojunction solar cell will cause its J-V curve S-shape. This can be obtained with carrier transportation theory. There formed two reverse biased diodes within the solar cells which impeded carrier transportation. This conclusion is verified by numerical simulation and found that the Schottky barrier height of the back contact exist a critical maximum value. Above this critical value, both open circuit voltage and fill factor of the solar cells degenerate significantly, while the short circuit current density has not apparently changes.

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