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Hao J.,Tianjin Electronic Materials Research Institute | Wang L.,Tianjin Electronic Materials Research Institute | Feng B.,Tianjin Electronic Materials Research Institute | Wang X.,Tianjin Electronic Materials Research Institute | And 5 more authors.
Journal of Electronic Materials | Year: 2010

A physical vapor transport process for growing vanadium-doped 6H-SiC single crystals was developed. Some 2-inch 6H-SiC wafers with resistivity larger than 1012 Ω cm were obtained. A yield of semi-insulating wafers of 89% for the whole ingot was achieved, which indicates that a decrease in the incorporation of nitrogen and control of the consumption of vanadium during the whole growth run was successful. The concentrations of vanadium N V and nitrogen N N, determined by secondary-ion mass spectroscopy (SIMS), and the calculated relation of resistivity versus N V/N N helped us explore the reason for this high resistivity and high semi-insulating yield. © 2009 TMS. Source

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