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Think Strategically

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The Marketing Agency Worldwide Introduces "Think Strategically Now" to Generate Faster, Lower-Cost Research-Built Marketing Strategies Introducing quantitative research-built strategies for advertising, positioning, packaging, new product concepts and acquisitions. Marketers can "Think Strategically Now" with faster, lower cost strategic research projects that include analysis and recommendations by senior advertising and marketing professionals. Projects are completed in days instead of months and at costs far below traditional levels. Los Angeles, CA, May 11, 2017 --( “This new streamlined service overcomes the long delay and high costs of traditional strategic research,” Klein says. “Typically, a strategic research project can take months and cost $20,000 to $50,000 or more. In addition, many research teams are not experienced in strategic planning, so their findings are then sent to an advertising agency or consulting firm for analysis and strategic recommendations. But The Marketing Agency’s 'Think Strategically Now' can get the complete job done in two weeks and at costs that start at less than $1,000.” The exclusive 4-step process begins with a “Briefing Doc” that the client completes to specify the parameters, goals and expectations of the project. Within days, The Marketing Agency responds with a free Proposal that defines the research methodology, and what the client can expect to receive in the “deliverable,” including the research data, and the analysis and strategic recommendations by senior marketing professionals. Mission: Fast, low cost research-built strategies The Marketing Agency Worldwide has been developing successful strategies for businesses ranging from start-ups to Fortune 100 multinationals for over 30 years. Today its mission is to leverage its depth of experience with the speed and economies of advanced online research technology to provide fast, cost-effective strategic services. It has built strategies for Procter & Gamble, Bristol-Myers Squibb, Hershey's, Unilever, Iams, Johnson & Johnson, Brunswick, Clairol, Premier Retail Networks, Scarguard, Walmart, Home Depot, NGM Media, Schweppes, GE and Transitions Optical. Los Angeles, CA, May 11, 2017 --( PR.com )-- Alan L. Klein, founder and CEO of The Marketing Agency Worldwide, underscores the importance of quantitative research to underpin key marketing decisions, “Consumer-driven decision-making is essential for differentiating brands from competitors, developing optimum advertising strategies; improving package design; evaluating new product concepts; measuring demand for an imported brand; assessing a potential acquisition, and probing customer satisfaction.”“This new streamlined service overcomes the long delay and high costs of traditional strategic research,” Klein says. “Typically, a strategic research project can take months and cost $20,000 to $50,000 or more. In addition, many research teams are not experienced in strategic planning, so their findings are then sent to an advertising agency or consulting firm for analysis and strategic recommendations. But The Marketing Agency’s 'Think Strategically Now' can get the complete job done in two weeks and at costs that start at less than $1,000.”The exclusive 4-step process begins with a “Briefing Doc” that the client completes to specify the parameters, goals and expectations of the project. Within days, The Marketing Agency responds with a free Proposal that defines the research methodology, and what the client can expect to receive in the “deliverable,” including the research data, and the analysis and strategic recommendations by senior marketing professionals.Mission: Fast, low cost research-built strategiesThe Marketing Agency Worldwide has been developing successful strategies for businesses ranging from start-ups to Fortune 100 multinationals for over 30 years. Today its mission is to leverage its depth of experience with the speed and economies of advanced online research technology to provide fast, cost-effective strategic services.It has built strategies for Procter & Gamble, Bristol-Myers Squibb, Hershey's, Unilever, Iams, Johnson & Johnson, Brunswick, Clairol, Premier Retail Networks, Scarguard, Walmart, Home Depot, NGM Media, Schweppes, GE and Transitions Optical.


Nguyen D.D.,COSMIAC | Kouhestani C.,COSMIAC | Kambour K.E.,Leidos | Devine R.A.B.,Think Strategically
Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics | Year: 2014

Using a rapid data acquisition methodology, the authors examine the time dependent recovery of the "permanent" component of charge build-up due to the negative bias temperature instability in Si based p-channel field effect transistors in inversion and n-channel devices in accumulation. The authors find clear evidence for recovery of the charge associated with interface states for elevated temperatures (≥150 °C) and for extended times (trecover ∼ 20 000 s). Recovery appears to begin at shorter times for p-channel devices than for n-channel. An explanation is advanced both for the mechanism of interface state annealing and for the difference observed between p and n channel devices. © 2014 American Vacuum Society.


Nguyen D.D.,COSMIAC | Kouhestani C.,COSMIAC | Kambour K.E.,Leidos | Bersuker G.,SEMATECH | Devine R.A.B.,Think Strategically
IEEE International Integrated Reliability Workshop Final Report | Year: 2014

The existence of multiple, physically distinct components of Negative Bias Temperature Instability requires a measurement methodology which allows the extraction of each component independently. In this paper we present results obtained at room temperature, which minimizes both the interface state and switching trap components, allowing us to explore the trapping of holes at preexisting defects in the oxide. This is done for both SiON and HfO2/SiO2 oxide stacks of similar total thickness. Results are presented for both pseudo-DC and pulse stressing including the dependence of the pulse measurements on duty cycle. A two trap model using the Tewksbury formalism is proposed to predict the results. © 2014 IEEE.


Kambour K.E.,Leidos | Kouhestani C.,TEAM Technologies Inc. | Nguyen D.D.,COSMIAC | Devine R.A.B.,Think Strategically
Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics | Year: 2016

The need for more reliable and radiation hard complementary metal-oxide-semiconductor compatible devices coupled with an ever increasing shrinkage of device dimensions has led naturally to interest in metal-oxide semiconductor field-effect transistors having nontraditional geometries. One such geometry is the gate-all-around transistor, which has been suggested to be less sensitive than its planar counterpart to the effect of charge build-up at the semiconductor-insulator interface such as that induced by irradiation. In order to explore the radiation hardness of such a structure, the effect of radiation on gate-all-around n-type metal-oxide-semiconductor devices was investigated by computing the effect of charging on the threshold voltage of the device. The radiation sensitivity in ideal structures is explored, and the greater radiation sensitivity found experimentally in some devices is explained. © 2016 American Vacuum Society.


Kambour K.E.,Leidos | Kouhestani C.,COSMIAC | McMarr P.,Sotera Defense Solutions | Hughes H.L.,U.S. Navy | And 2 more authors.
Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics | Year: 2015

Negative bias temperature instability (NBTI) has been measured at various temperatures in high-k gate insulator MOSFETs with buried Si0.65Ge0.35 channels and with regular Si surface channels. Previous studies on both surface channel Si devices and Si1-xGex buried channel devices provide evidence for net positive charge trapping as a function of electrical stressing time albeit reduced for the case of Si1-xGex compared to the Si case. In our case, for buried Si0.65Ge0.35, the authors find initial negative charge trapping followed by positive charge trapping at longer times, typically >10-1 s. The effect is accentuated at higher temperatures and yields a turnaround in the measured threshold voltage shift as a function of stress time. Closer examination of NBTI in high-k gate, Si surface devices stressed at room temperature and 90 deg;C suggests both electron and hole trapping may be present there although the majority effect is hole trapping. © 2015 American Vacuum Society.


Kambour K.E.,Leidos | Nguyen D.D.,COSMIAC | Kouhestani C.,COSMIAC | Devine R.A.B.,Think Strategically
IEEE International Integrated Reliability Workshop Final Report | Year: 2013

The generation of interface states created by depassivating dangling bonds at the interface between the gate dielectric and silicon substrate is important for both the growth of Negative Bias Temperature Instability threshold voltage shift in MOSFETs and the radiation sensitivity of the devices. In this paper we present results comparing the generation of interface states for both processes and their possible annealing at high temperatures. © 2013 IEEE.


Nguyen D.D.,COSMIAC | Kouhestani C.,COSMIAC | Kambour K.E.,Leidos | Devine R.A.B.,Think Strategically
IEEE International Integrated Reliability Workshop Final Report | Year: 2013

This paper reports new high temperature measurements of Negative Bias Temperature Instability induced interface states in both NMOS and PMOS devices. Evidence of annealing of the interface states, previously thought to be 'permanent', is presented for measurements including a methodology which allows the direct measurement of the time dependent growth/recovery of the interface state component. © 2013 IEEE.


Nguyen D.D.,COSMIAC | Kambour K.E.,Leidos | Kouhestani C.,COSMIAC | Devine R.A.B.,Think Strategically
ECS Transactions | Year: 2014

We have performed negative and positive bias temperature instability (NBTI and PBTI) measurements on devices having different gate oxide types and thicknesses. The devices used for the study include 130nm and 90 nm oxynitrided gate dielectric bulk Si technology and devices with pure SiO2 gate dielectric. NBTI and PBTI were studied for both p-channel and n-channel MOSFETs for each of the oxide types and thicknesses, this requires the measurements be made in both accumulation and inversion modes. Using "Pseudo DC" measurements at 120 ° C on p-channel and n-channel devices, we have extracted at least three distinct components of BTI. We find evidence for the existence of positive charge injection for PMOS under PBTI and more puzzling results for NMOS under PBTI, where unexpected interface state creation was observed. © 2014 by The Electrochemical Society. All rights reserved.


Kambour K.,SAIC | Rosen N.,Air Force Research Lab | Kouhestani C.,COSMIAC | Nguyen D.,COSMIAC | And 6 more authors.
IEEE Transactions on Nuclear Science | Year: 2012

Initial experimental work has demonstrated that X-ray bombardment of organic-based photocells (specifically P3HT:PCBM-based) leads to a reduction in the open-circuit voltage (Voc) without apparent change in the carrier relaxation time. The variation of Voc was suggested to be due to the injection and trapping of holes near the anode, which resulted in a decrease in the built-in potential. We have extended the experimental measurements to higher total dose (∼ 1300(SiO2)). Using standard inorganic modeling tools, a device model of the organic cell has been developed and predictions made. These predictions have been compared to the results of the previous and new experimental measurements and they demonstrate reasonable agreement between the two, thereby supporting the initial charge buildup hypothesis. Questions about the origin and behavior of the photo-carrier relaxation arise. © 1963-2012 IEEE.


Mayberry C.,U.S. Air force | Nguyen D.D.,COSMIAC | Kouhestani C.,COSMIAC | Kambour K.E.,SAIC | And 2 more authors.
ECS Transactions | Year: 2012

The increase in the magnitude of the threshold voltage of a positive-channel metal oxide semiconductor (PMOS) under negative gate biasing (negative bias temperature instability) is attributed to the build-up of charge in the gate insulator. We have studied the charging and discharging of nitrided SiO2 gate insulator field effect transistors and through the use of pseudo-DC and pulsed stressing methods, have extracted, at least, three charging components. These components are (a) the charging of interface states at the semiconductor/insulator boundary, (b) dynamically recoverable positive charging in the bulk' of the insulator, and (c) positive charging in the insulator, which can be eliminated' only by application of a positive electric field across the insulator. It is proposed that the charge elimination' in (c) arises via a charge neutralization process involving electron capture at switching traps, as opposed to de-trapping, and that this can be reversed by the application of a small negative field. © The Electrochemical Society.

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