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Klumdoung P.,King Mongkut's University of Technology Thonburi | Asanithi P.,King Mongkut's University of Technology Thonburi | Chaiyakun S.,Vacuum Technology and Thin Films Research Laboratory | Limsuwan P.,King Mongkut's University of Technology Thonburi | Limsuwan P.,Thin Film Technology Research Laboratory
Advanced Materials Research | Year: 2011

This study is to evaluate a color variation of the zirconium nitride thin film, prepared from deposition technique of different N2 flow rates, ranging from 0.0 to 3.0 sccm, whereas the Ar flow rate is fixed at 3 sccm. The thin film was deposited on an unheated silicon wafer (100) via a reactive DC magnetron sputtering. The deposition current and deposition time were 0.6 A and 15 minutes, respectively. In the study, colors of film were changed from silver, gold, dark brown, brown, purple, pink to blue, when N2 flow rate further increase. Interestingly, the results indicate that gold color occurs in a very small interval of N2 flow rate. © (2011) Trans Tech Publications.


Jutarosaga T.,King Mongkut's University of Technology Thonburi | Jutarosaga T.,Thin Film Technology Research Laboratory | Chityuttakan P.,King Mongkut's University of Technology Thonburi | Chityuttakan P.,Thin Film Technology Research Laboratory | And 3 more authors.
Chiang Mai Journal of Science | Year: 2013

A synthesis method of semi-transparent conducting Ag-nanowire network on glass substrates at room temperature using a simple oxidation-reduction reaction of Cu nanoparticles and 0.1M AgNO3 solution was presented. The morphological, structural, electrical and optical properties of the synthesized Ag nanowire networks were characterized using scanning electron microscopy, X-ray diffraction, 4-point probe technique and UV-Vis spectrophotometry. The synthesized Ag nanowires had FCC structure. The Ag-nanowire network exhibited the semi-transparency up to 36% with the sheet resistance of about 104 Ω/sq. It was suggested that the morphology of the Cu thin film may play an important role in controlling the Ag nanowire density and morphology.


Luangchaisri C.,King Mongkut's University of Technology Thonburi | Luangchaisri C.,Thin Film Technology Research Laboratory | Dumrongrattana S.,King Mongkut's University of Technology Thonburi | Dumrongrattana S.,Thin Film Technology Research Laboratory | Rakkwamsuk P.,King Mongkut's University of Technology Thonburi
Procedia Engineering | Year: 2012

Fluorine doped tin dioxide (FTO) films were prepared on glass substrates by a homemade ultrasonic spray pyrolysis system and the electrical properties were improved by annealing in air. The as-deposited film was prepared from SnCl 4 solution. This spray solution prepared from tin tetrachloride pentahydrate (SnCl4·5H2O) dissolved in deionized water at 0.3M concentration and NH4F was added into the solution for fluorine doping. The NH4F/SnCl4 ratio was varied as 0, 5, 10, 20 and 40 %mol, respectively. All of films were prepared at the same period of time, 15 minutes, and substrate temperatures of 300°C. The lowest resistivity of prepared films was found about 8.40×10-1 Ω·cm at the optimum NH4F/SnCl4 ratio of 10 %mol. The heat treatment parameters were annealed temperature and time. The annealed temperature was varying as 200, 250, 300 and 350 °C and annealed times were set at three different values as 15, 30 and 45 min. for each annealed temperature. After heat treatment process, the transmittance in the near infrared range was decreased due to the decreasing of resistivity. © 2010 Published by Elsevier Ltd.


Jutarosaga T.,Bangkok Thonburi University | Jutarosaga T.,Thin Film Technology Research Laboratory | Suapadkron P.,Bangkok Thonburi University | Suapadkron P.,Thin Film Technology Research Laboratory | And 5 more authors.
Kasetsart Journal - Natural Science | Year: 2014

Au thin films were deposited on 150-nm thick indium tin oxide (ITO)/glass using a simple direct current sputtering technique. The Au thickness was varied from approximately 8 nm to 34 nm. Asdeposited bi-layered Au/ITO thin films were then characterized using a four-point probe technique and Hall measurement to identify their electrical properties. The results showed that there was a substantial contribution from the Au films on the electrical conductivity of the bi-layered material, even when a discontinuous Au nanostructure was observed on the ITO films. A simple circuit model was developed to identify the electrical behavior of this bi-layered material. The increase in the carrier concentration and the reduction in carrier mobility was possibly a result of the interfaces between the Au islands and the ITO film. © 2014 Kasetsart J. (Nat. Sci.) All rights received.

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