The Key Laboratory of Photonic Devices and Materials of Anhui

Hefei, China

The Key Laboratory of Photonic Devices and Materials of Anhui

Hefei, China
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Zhang Q.,CAS Anhui Institute of Optics and Fine Mechanics | Zhang Q.,The Key Laboratory of Photonic Devices and Materials of Anhui | Zhou W.,CAS Anhui Institute of Optics and Fine Mechanics | Zhou W.,The Key Laboratory of Photonic Devices and Materials of Anhui | And 10 more authors.
Guangxue Xuebao/Acta Optica Sinica | Year: 2010

Yb3+:GdTaO4 was grown by Czochralski method. Its absorption, photoluminescence spectra were measured, and its spectral property parameters were computed. Full width at half maximum (FWHM) of absorption of Yb3+:GdTaO4 is 56 nm, which is 2.4 times broader than that of Yb3+:YAG. Its absorption peaks are at 930, 957 and 974 nm, whose absorption cross sections are 0.81×10-20, 0.91×10-20, and 1.2×10-20 cm2, respectively. The main peak of photoluminescence is at 1016 nm. The FWHM of emission peaking at 1016 and 1035 nm are 42 and 57 nm, which are 4~6 times wider than that of Yb3+:YAG, corresponding cross sections are 2.29×10-20 and 1.36×10-20 cm2, respectively, which are a little higher than or equal to that of Yb3+:YAG. Its broad absorption band makes for decreasing the dependence on the temperature control of pump laser diode (LD), and broad emission band makes for realizing laser output of ultra-short pulse and tunable laser. Results indicate that Yb3+:GdTaO4 is a very promising laser medium used in all-solid state ultra-short pulsed and tunable lasers.

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