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Dallas, TX, United States

Fuentes-Fernandez E.M.A.,University of Texas at Dallas | Salomon-Preciado A.M.,University of Texas at Dallas | Gnade B.E.,University of Texas at Dallas | Quevedo-Lopez M.A.,University of Texas at Dallas | And 2 more authors.
Journal of Electronic Materials | Year: 2014

The effect of a polycrystalline silicon (poly-Si) seeding layer on the properties of relaxor Pb(Zr0.53,Ti0.47)O3-Pb(Zn1/3,Nb2/3)O3 (PZT-PZN) thin films and energy-harvesting cantilevers was studied. We deposited thin films of the relaxor on two substrates, with and without a poly-Si seeding layer. The seeding layer, which also served as a sacrificial layer to facilitate cantilever release, was found to improve morphology, phase purity, crystal orientation, and electrical properties. We attributed these results to reduction of the number of nucleation sites and, therefore, to an increase in relaxor film grain size. The areal power density of the wet-based released harvester was measured. The power density output of the energy harvester with this relaxor composition and the poly-Si seeding layer was 325 μW/cm2. © 2014 The Minerals, Metals & Materials Society. Source


Fuentes-Fernandez E.M.A.,University of Texas at Dallas | Gnade B.E.,University of Texas at Dallas | Quevedo-Lopez M.A.,University of Texas at Dallas | Shah P.,Texas Micro Power Inc. | Alshareef H.N.,King Abdullah University of Science and Technology
Journal of Materials Chemistry A | Year: 2015

The effect of poling conditions on the power output of piezoelectric energy harvesters using sol-gel based Pb(Zr0.53,Ti0.47)O3-Pb(Zn1/3,Nb2/3)O3 piezoelectric thin-films has been investigated. A strong correlation was established between the poling efficiency and harvester output. A method based on simple capacitance-voltage measurements is shown to be an effective approach to estimate the power output of harvesters poled under different conditions. The poling process was found to be thermally activated with an activation energy of 0.12 eV, and the optimum poling conditions were identified (200 kV cm-1, 250 °C for 50 min). The voltage output and power density obtained under optimum poling conditions were measured to be 558 V cm-2 and 325 μW cm-2, respectively. © The Royal Society of Chemistry.2015. Source


Fuentes-Fernandez E.,University of Texas at Dallas | Debray-Mechtaly W.,University of Texas at Dallas | Quevedo-Lopez M.A.,University of Texas at Dallas | Gnade B.,University of Texas at Dallas | And 4 more authors.
Journal of Electronic Materials | Year: 2011

0.9Pb(Zr 0.53,Ti 0.47)O 3-0.1Pb(Zn 1/3,Nb 2/3)O 3 (PZT-PZN) thin films and integrated cantilevers have been fabricated. The PZT-PZN films were deposited on SiO 2/Si or SiO 2/Si 3N 4/SiO 2/poly-Si/Si membranes capped with a sol-gel-derived ZrO 2 buffer layer. It is found that the membrane layer stack, lead content, existence of a template layer of PbTiO 3 (PT), and ramp rate during film crystallization are critical for obtaining large-grained, single-phase PZT-PZN films on the ZrO 2 surface. By controlling these parameters, the electrical properties of the PZT-PZN films, their microstructure, and phase purity were significantly improved. PZT-PZN films with a dielectric constant of 700 to 920 were obtained, depending on the underlying stack structure. © 2010 TMS. Source

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