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TEL Solar AG | Date: 2014-05-22

A method of measuring a current-voltage (IV) characteristic for a photovoltaic (PV) device is described. The method includes providing a PV module for measuring an IV characteristic; exposing the PV module to a solar electromagnetic (EM) spectrum; and acquiring an IV data point on the IV characteristic. The acquisition of an IV data point includes measuring plural IV segments by repetitively applying and sweeping a voltage across the PV module from a unique initial voltage to a target voltage within a time scale for exposing said PV module to the solar EM spectrum, and interpreting a measured current at the target voltage as the IV data point on the IV characteristic if the plural IV segments converge at the target voltage.

Solar devices with high resistance to light-induced degradation are described. A wide optical bandgap interface layer positioned between a p-doped semiconductor layer and an intrinsic semiconductor layer is made resistant to light-induced degradation through treatment with a hydrogen-containing plasma. In one embodiment, a p-i-n structure is formed with the interface layer at the p/i interface. Optionally, an additional interface layer treated with a hydrogen-containing plasma is formed between the intrinsic layer and the n-doped layer. Alternatively, a hydrogen-containing plasma is used to treat an upper portion of the intrinsic layer prior to deposition of the n-doped semiconductor layer. The interface layer is also applicable to-multi-junction solar cells with plural p-i-n structures. The p-doped and n-doped layers can optionally include sublayers of different compositions and different morphologies (e.g., microcrystalline or amorphous). The overall structure shows both an increased stability with respect to light-induced degradation and an improved performance level.

TEL Solar AG | Date: 2014-09-26

This disclosure describes systems and methods for making at least a portion of a photovoltaic device. This may include a method of manufacturing, an optimization procedure and an apparatus for the PECVD (plasma enhanced chemical vapor deposition) of thin films over large area substrates. In particular, the system may be used to deposit thin film silicon material for photovoltaic (PV) applications. The photovoltaic device may be achieved by a combination of plasma chamber design (e.g., inter-electrode separation) and plasma process parameters (e.g., pressure, applied RF voltage, etc.) to optimize the doped and/or intrinsic layers of the solar cell (e.g., p-i-n junction).

TEL Solar AG | Date: 2014-01-20

This application relates to systems and methods for improving solar cell efficiently by enabling more light to be captured by the absorber layer. The reflector layer in a solar cell may be designed to reflect light back into the absorber layer that has already passed through the absorber layer. The reflector layer may include a surface protrusion that has a surface that has an angle of approximately 45 degrees. Incident light is reflected from that surface towards the absorber layer or towards the reflector layer which, in turn, reflects the light back towards the absorber layer or the silicon stack. The light may be reflected at an angle that enables the light to have total internal reflection within the silicon layer (e.g., absorber layer, c-Si layer, and a-Si layer).

TEL Solar AG | Date: 2013-06-17

A substrate processing system includes a vertically movable chamber section so that chamber sections are vertically separable to provide open and closed positions of a processing chamber or reactor, such as a plasma enhanced CVD chamber. In the open position, substrates are loaded and unloaded from the processing chamber, while in the closed position an enclosed processing volume is provided for processing substrates, particularly for processing large substrates (e.g., one square meter or larger) with a small gap (3-10 mm) between electrodes. Plural processing chambers can be provided and coupled to an actuator assembly for simultaneously vertically moving a chamber section or chamber portion of each processing chamber. Lift pins for receiving and positioning of substrates within the processing chambers can also be moved by the actuator assembly. A removable mounting arrangement is also provided for the lift pins.

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