Technological Institute For Superhard And Novel Carbon Materials7A Centralnaya Str142190Troitsk

Technological Institute For Superhard And Novel Carbon Materials7A Centralnaya Str142190Troitsk


Time filter

Source Type

Tarelkin S.,National University of Science and Technology | Bormashov V.,Technological Institute For Superhard And Novel Carbon Materials7A Centralnaya Str142190Troitsk | Buga S.,Technological Institute For Superhard And Novel Carbon Materials7A Centralnaya Str142190Troitsk | Volkov A.,Technological Institute For Superhard And Novel Carbon Materials7A Centralnaya Str142190Troitsk | And 6 more authors.
Physica Status Solidi (A) Applications and Materials Science | Year: 2015

We developed and investigated the vertical diamond Schottky barrier diodes on large area IIb HPHT high quality substrates. The drift CVD layers with boron content of 1016 and 2×1017cm-3 were made. The diodes possess an integral forward current higher than 10A in the temperature range of 25-200°C. The self-heating effect further improves the diode forward characteristics. We tested different crystal-to-case thermal interfaces. Diodes have less than 3.5V forward voltage drop for 10A at 25°C and less than 1V at 200°C with the on-resistance as low as 0.05Ω (10mΩcm2). We calculated the real Baliga figures of merit (BFOM) of diodes taking into account an incomplete acceptors ionization and a finite substrate resistivity. The low doped diamond conductivity model was used to calculate and optimize the BFOM for various diode designs. The diodes with BFOM up to 200MW/cm2 can be made for diamond drift layer with the blocking field of 2MV/cm and as high as 18000 MW/cm2 in the case of EMAX ∼8 MV/cm. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Loading Technological Institute For Superhard And Novel Carbon Materials7A Centralnaya Str142190Troitsk collaborators
Loading Technological Institute For Superhard And Novel Carbon Materials7A Centralnaya Str142190Troitsk collaborators