Tarelkin S.,National University of Science and Technology |
Bormashov V.,Technological Institute For Superhard And Novel Carbon Materials7A Centralnaya Str142190Troitsk |
Buga S.,Technological Institute For Superhard And Novel Carbon Materials7A Centralnaya Str142190Troitsk |
Volkov A.,Technological Institute For Superhard And Novel Carbon Materials7A Centralnaya Str142190Troitsk |
And 6 more authors.
Physica Status Solidi (A) Applications and Materials Science | Year: 2015
We developed and investigated the vertical diamond Schottky barrier diodes on large area IIb HPHT high quality substrates. The drift CVD layers with boron content of 1016 and 2×1017cm-3 were made. The diodes possess an integral forward current higher than 10A in the temperature range of 25-200°C. The self-heating effect further improves the diode forward characteristics. We tested different crystal-to-case thermal interfaces. Diodes have less than 3.5V forward voltage drop for 10A at 25°C and less than 1V at 200°C with the on-resistance as low as 0.05Ω (10mΩcm2). We calculated the real Baliga figures of merit (BFOM) of diodes taking into account an incomplete acceptors ionization and a finite substrate resistivity. The low doped diamond conductivity model was used to calculate and optimize the BFOM for various diode designs. The diodes with BFOM up to 200MW/cm2 can be made for diamond drift layer with the blocking field of 2MV/cm and as high as 18000 MW/cm2 in the case of EMAX ∼8 MV/cm. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. Source