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Chisinau, Moldova

The Technical University of Moldova is a higher technical educational institution located in Chişinău, Moldova, and is the only such institute in the country to be accredited by the state. Wikipedia.


Korotcenkov G.,Gwangju Institute of Science and Technology | Korotcenkov G.,Technical University of Moldova | Cho B.K.,Gwangju Institute of Science and Technology
Critical Reviews in Solid State and Materials Sciences | Year: 2010

The present review article is devoted to the analysis of the problems related to the design of gas sensors based on porous semiconductors (PS). The peculiarities of the semiconductor porosification by anodic etching and the principles of gas sensor design based on porous semiconductors, including gas sensor construction and main operating characteristics, are considered in the article. It is shown that the influence of the surrounding atmosphere on such parameters of porous semiconductors as refractive index, the intensity of photoluminescence, electroconductivity, dielectric constant, and surface potential might be used for gas sensor design. Based on the conducted analysis it is concluded that porous semiconductors have a great potential for the above-mentioned applications. However, the realization of those opportunities is restrained by such factors as bad reproducibility, increased temporal drift of characteristics, low selectivity, and an unsatisfactory level of understanding of the operating mechanism of sensors fabricated on the basis of porous semiconductors. Source


Bajenescu T.-M.I.,Technical University of Moldova
Electrotehnica, Electronica, Automatica | Year: 2012

Driven by energy-efficient industrial and renewable energy applications, the demand for power semiconductors has been increasing rapidly. The time for turn-on and turn-off of standard power modules influences the lifetime as well. The short load cycle influences the life time of the bond wire. The junction temperature is increased to 175 °C. New IGBT modules should not use any solder layer and provide a very high reliability. Type selection of IGBT modules to match the lifetime design taking into account the wear-out duration is very important for the reliability of product, while the product lifetime depends on how much design margin remains in practical system. Source


Bajenescu T.-M.I.,Technical University of Moldova
Electrotehnica, Electronica, Automatica | Year: 2012

This review analyses recent trends in graphene research and applications, and attempts to identify future directions in which the field is likely to develop. Graphene - the thinnest material in the universe, produced by epitaxial growth and exfoliation - can be used to make excellent transistors and is a promising alternative to conventional transparent electrode materials. Graphene and scanning probe microscopy (SPM) techniques will remain linked together, and will take mutual advantage of their peculiar characteristics. Source


Bajenescu T.-M.I.,Technical University of Moldova
EEA - Electrotehnica, Electronica, Automatica | Year: 2016

A scientific and technical revolution has begun that is based upon the ability to systematically organize and manipulate matter on the micrometre length scale. We do not have a great deal of information about the useful life of these sophisticated products even though they are flooding the market. Conventional reliability theories need to be restudied to be applied to micro-engineering. A confident use of these technologies relies on our capacity to better understand their fault mechanisms, and our ability to deduce related fault models. © 2016, ICPE Electra Publishing House. All rights reserved. Source


Casian A.,Technical University of Moldova
Physical Review B - Condensed Matter and Materials Physics | Year: 2010

The charge and energy transport in some highly conducting quasi-one-dimensional organic crystals is studied. Two electron-phonon interactions and scattering on impurity are considered. It is found that the Wiedemann-Franz law is strongly violated. The Lorentz number is diminished for a large interval of Fermi energy: (1) due to faster decrease in thermal conductivity than the electrical conductivity when the conduction band width is decreased, and (2) due to strong dependence of relaxation time on carrier energy. The Lorentz number becomes dependent on crystal purity and may be reduced by up to ten times and even more in comparison with ordinary materials. This is favorable for the increase of thermoelectric figure of merit ZT. It is predicted that in really existing crystals of tetrathiotetracene-iodide, when after the optimization of carrier concentration ZT=1.4 is expected, the Lorentz number is reduced by 1.6 times with respect to the usual value. © 2010 The American Physical Society. Source

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