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Simpheropol, Ukraine

Asanov E.E.,Tavriya National University | Zuyev S.A.,Tavriya National University | Kilessa G.V.,Tavriya National University | Slipchenko N.I.,Kharkov National University of Radio Electronics
Telecommunications and Radio Engineering (English translation of Elektrosvyaz and Radiotekhnika) | Year: 2012

The influence of bias current upon the frequency characteristics and stability of MS-GFETs has been analyzed using the numerical simulation procedures. It is shown that, as the frequency of an effective voltage radio pulse increases, the bias current tends to grow and the conduction current decreases. As a result, the heating rate of the MS-GFET active region falls off, and there occurs the threshold voltage buildup, thereby leading to a breakdown onset. © 2012 by Begell House, Inc. Source


Arsenichev S.P.,Tavriya National University | Bendeberya G.N.,Tavriya National University | Grigoryev Ye.V.,Tavriya National University | Zuyev S.A.,Tavriya National University | And 3 more authors.
Telecommunications and Radio Engineering (English translation of Elektrosvyaz and Radiotekhnika) | Year: 2014

The results of experimental researches of reflection, passing and absorption of electromagnetic waves in the thin films of copper, aluminum and nichrome are presented in the range of wave lengths of 2...10 cm. The analysis of the results shows that reflection factors decrease as far as the film thickness decreases. The film structure acts more on the reflection factors values than film material permittivity. The transit factor behavior in the thin films is determined by the electromagnetic wave absorption, the size of which depends nonlinear on the thickness and is determined by the technology and a number of other factors. The absorption increases largely for the films whose thickness is less than 50 nm. © 2014 by Begell House, Inc. Source


Kilessa G.V.,Tavriya National University | Asanov E.E.,Tavriya National University | Zuyev S.A.,Tavriya National University | Starostenko V.V.,Tavriya National University | Slipchenko N.I.,Kharkov National University of Radio Electronics
Telecommunications and Radio Engineering (English translation of Elektrosvyaz and Radiotekhnika) | Year: 2014

The mechanisms for electron scattering in Gallium Arsenide have been analyzed in terms of the nonparabolicity of energy bands. Operating relations for current transfer simulation in a semiconductor structure have been derived by the particle-in-cell method. The numerical investigation into the impact of scattering processes upon the free carrier drift velocity has been carried out using the Monte-Carlo method. © 2014 by Begell House, Inc. 1273. Source


Bykov M.A.,Kharkov National University of Radio Electronics | Zuyev S.A.,Tavriya National University | Slipchenko N.I.,Kharkov National University of Radio Electronics | Shadrin A.A.,Tavriya National University
Telecommunications and Radio Engineering (English translation of Elektrosvyaz and Radiotekhnika) | Year: 2013

A physico-mathematical model and a procedure of computational investigations into the photocarrier current flow transport in thin amorphous hydrogenated silicon films are described. The results of the above investigations into current flow processes within the structure based upon the amorphous-crystalline silicon heterojunction are analyzed. The data on the calculated relationship between the photocurrent flow and the film thickness are presented. © 2013 by Begell House, Inc. Source

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