Lugansk Taras Shevchenko University

Luhans’k, Ukraine

Lugansk Taras Shevchenko University

Luhans’k, Ukraine
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Gritskikh V.A.,Lugansk Taras Shevchenko University | Zhikharev I.V.,Donetsk Institute For Physics And Engineering Named After Aa Galkin | Kara-Murza S.V.,Lugansk Taras Shevchenko University | Korchikova N.V.,Lugansk Taras Shevchenko University | And 7 more authors.
Springer Proceedings in Physics | Year: 2017

The In2O3 films were deposited by dc-magnetron sputtering on substrates of Al2O3 (012) at different temperatures (20–600 °C). Ellipsometric and optical transmission measurements were used to investigate the effect of substrate temperature and annealing on the properties of the films. The profiles of refraction index, direct and “indirect” band gap were determined. The annealing naturally results in unification of the properties of the explored films: the refraction index grows, the degree of homogeneity on a thickness increases and the thickness of the disturbed layer on the surface of films decreases, i.e. film material is compact. Also the annealing reduces the energies of band-to-band transitions. This can be explained by a decrease of influence of barriers in the annealed films. However, the width of direct band gap changes more than “indirect” one. It seems that this is related to the mechanism of indirect transitions: phonon participation facilitates the interband transitions, even if they are hampered by the presence of extra barriers caused by grain boundary. The last result may indirectly evidence of the existence of indirect transitions in this material. © 2017, Springer International Publishing AG.

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