TanKeBlue Semiconductor Co.

Beijing, China

TanKeBlue Semiconductor Co.

Beijing, China
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Liu N.,CAS Institute of Physics | Liu N.,University of Chinese Academy of Sciences | Wang W.,CAS Institute of Physics | Guo L.,CAS Institute of Physics | And 3 more authors.
Modern Physics Letters B | Year: 2017

The electronic structure and the lattice dynamics of N-doped 3C-SiC have been studied using the first-principles calculations. Electrons are introduced to the conduction band bottom at the X-point of the Brillouin zone. It is revealed that the acoustical modes and optical modes soften upon N doping. The softened acoustical modes contribute over twice of what the optical modes do to the electron-phonon coupling strength. We predict that the superconductivity will occur with N doping concentration beyond about 3 at.% and the transition temperature can reach 11.36 K upon doping of N at about 5 at.% for 3C-SiC. © 2017 World Scientific Publishing Company.


Peng T.-H.,TankeBlue Semiconductor Co. | Liu C.-J.,TankeBlue Semiconductor Co. | Liu C.-J.,CAS Institute of Physics | Wang B.,TankeBlue Semiconductor Co. | And 13 more authors.
Rengong Jingti Xuebao/Journal of Synthetic Crystals | Year: 2012

Growth and processing of SiC single crystals was introdeced in order to enlarge the crystal size and obtain quality SiC wafers. Considerable progresses have been made in these aspects, resulting in the first spring-off in China that is devoted to mass production quality 4H-SiC and 6H-SiC wafers. Up to 2011, for most SiC wafers, the micropipe density is lower than 1 cm-2 and the average full width at half maxima of X-ray rocking curves for the (0004) reflection is lower than 20″. N-type and semi-insulating SiC single crystals with homogeneous resistivity lower than 0.02 Ω·cm and up to 108 Ω·cm have been stably grown, respectively. The epi-ready processing was developed and applied to wafers inducing quite low roughness, bow and warp and obtaining quality epitaxial layer. In the meantime, a series progresses have been achieved in the investigation of basic properties of SiC and the fabrication of epitaxial graphene on SiC substrates. Both experimentally and theoretically showed that the intentionally created defects dominated by divacancies are responsible for the magnetism, the first evidence of its kind in SiC single crystals irradiated by neutron. Large area of quality graphene has been fabricated by pulsed electron irradiation and physical vapour transport methods.


Li Z.-Y.,Nanjing University | Li Z.-Y.,Nanjing Electronic Devices Institute | Han P.,Nanjing University | Li Y.,Nanjing Electronic Devices Institute | And 3 more authors.
Chinese Physics Letters | Year: 2011

Homo-epitaxial layers are successfully grown on Si-face 4° off-axis 4H-SiC substrates using the horizontal hot-wall chemical vapor deposition system. The smooth surface without morphological defects is obtained by the optimized in situ etching process and growth temperature. Schottky diodes fabricated on the epilayer present a typical I - V characteristic. This is the first report of Schottky diodes fabricated on 4° off-axis 4H-SiC substrates made in China. © 2011 Chinese Physical Society and IOP Publishing Ltd.


A technology for growing silicon carbide single crystals by PVT (Physical Vapor Transport) and a technology for in-situ annealing the crystals after growth is finished is provided. The technology can achieve real-time dynamic control of the temperature distribution of growth chamber by regulating the position of the insulation layer on the upper part of the graphite crucible, thus controlling the temperature distribution of growth chamber in real-time during the growth process according to the needs of the technology, which helps to significantly improve the crystal quality and production yield. After growth is finished, the inert gas pressure in growth chamber is raised and the temperature gradient of the growth chamber is reduced so that in-situ annealing the silicon carbide crystals can be carried out under a small one, which helps to reduce the stress between the crystal and the crucible lid as well as that in sublimation grown crystals to reduce the breakage ratio and improve the yield ratio during the subsequent fabrication process.


The invention provides a technology for growing silicon carbide single crystals by PVT (Physical Vapor Transport) and a technology for in-situ annealing the crystals after growth is finished. Specifically, the technology can achieve real-time dynamic control of the temperature distribution of growth chamber by regulating the position of the insulation layer on the upper part of the graphite crucible, thus controlling the temperature distribution of growth chamber in real-time during the growth process according to the needs of the technology, which helps to significantly improve the crystal quality and production yield. After growth is finished, the inert gas pressure in growth chamber is raised and meanwhile the temperature gradient of the growth chamber is reduced so that in-situ annealing the silicon carbide crystals can be carried out under a small one, which helps to reduce the stress between the crystal and the crucible lid as well as that in sublimation grown crystals, thereby reducing the breakage ratio and improving the yield ratio during the subsequent fabrication process.

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