Saitama, Japan
Saitama, Japan

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Patent
Tamura Corporation, Tokyo University of Agriculture and Technology | Date: 2017-03-15

Provided are: a semiconductor substrate comprising a -Ga_(2)O_(3) single crystal, on which an epitaxial layer comprising a -Ga_(2)O_(3) single crystal can be made to grow at a high growth rate using the hydride vapor phase epitaxy (HVPE) method; an epitaxial wafer comprising such semiconductor substrate and epitaxial layer; and a method for manufacturing such epitaxial wafer. As one embodiment of the present invention, provided is a semiconductor substrate (11), used as a base substrate for epitaxial crystal growth by the HVPE method, wherein the semiconductor substrate comprises a -Ga_(2)O_(3)-based single crystal and a plane parallel to the [010] axis of the -Ga_(2)O_(3) single crystal is used as the principal surface.


Patent
Tamura Corporation | Date: 2017-04-05

A solder composition of the invention includes: a flux composition containing a component (A) in a form of a rosin-based resin, a component (B) in a form of an activator and a component (C) in a form of a solvent; and a component (D) in a form of a solder powder. The component (B) in a form of the activator contains a component (B1) in a form of an aromatic carboxylic acid having a hydroxyl group or an acyl group at an ortho position or a pros position.


Patent
Tamura Corporation and Koha Co. | Date: 2017-05-10

Provided is a gallium oxide substrate which has less linear pits. Obtained is a gallium oxide substrate wherein the average density of linear pits in a single crystal surface is 1,000 pits/cm2 or less.


Patent
Tamura Corporation and Koha Co. | Date: 2017-05-03

A high-quality -Ga2O3 single-crystal substrate having little variation in crystal structure is provided. Provided in one embodiment is a -Ga203 single-crystal substrate 1 formed from a -Ga2O3 single crystal, wherein the principal surface is a plane parallel to the b axis of the -Ga203 single crystal and the maximum value of on any straight line on the principal surface which passes through the center of the principal surface is not more than 0.7264. is the difference between the maximum value and the minimum value obtained by subtracting a from s at each measurement position, where: s represents the angle formed by the incident direction of the X ray at the peak position of an X-ray rocking curve and the principal surface on the straight line; and a represents the angle on a straight approximation line obtained by using the method of least squares to linearly approximate the curve representing the relationship between the aforementioned s and the measurement position therefor.


Patent
Tamura Corporation and Koha Co. | Date: 2015-07-01

Provided is a gallium oxide substrate which has less linear pits. Obtained is a gallium oxide substrate wherein the average density of linear pits in a single crystal surface is 1,000 pits/cm2 or less.


Patent
Tamura Corporation, Tokyo University of Agriculture and Technology | Date: 2015-05-11

A semiconductor substrate for being used as a base substrate for epitaxial crystal growth by HVPE method includes a -Ga_(2)O_(3)-based single crystal, and a principal surface that is a plane parallel to a [010] axis of the -Ga_(2)O_(3)-based single crystal. An epitaxial wafer includes the semiconductor substrate, and an epitaxial layer that includes a -Ga_(2)O_(3)-based single crystal and is formed on the principal surface of the semiconductor substrate by epitaxial crystal growth using the HVPE method. A method for manufacturing the epitaxial wafer includes forming the epitaxial layer by epitaxial crystal growth using the HVPE method on the semiconductor substrate.


Patent
Tamura Corporation and Koha Co. | Date: 2016-03-02

Provided is a method for growing a -Ga_(2)O_(3)-based single crystal, whereby it becomes possible to grow a -Ga_(2)O_(3)-based single crystal having a small variation in crystal structure and also having high quality in the direction of the b axis. In one embodiment, a method for growing a -Ga_(2)O_(3)-based single crystal is provided, which comprises a step of growing a flat-plate-shaped Sn-containing -Ga_(2)O_(3)-based single crystal in the direction of the b axis using a seed crystal.


A lead-free solder alloy includes: 1 wt % to 4 wt % of Ag; 0.5 wt % to 1 wt % of Cu; 1 wt % to 5 wt % of Sb; 0.05 wt % to 0.25 wt % of at least one of Ni and Co; and Sn.


Patent
Tamura Corporation and Riken | Date: 2016-02-23

A nitride semiconductor template includes a Ga_(2)O_(3 )substrate, a buffer layer that includes as a main component AlN and is formed on the Ga_(2)O_(3 )substrate, a first nitride semiconductor layer that includes as a main component Al_(x)Ga_(1-x)N (0.2


Patent
Tamura Corporation | Date: 2016-06-02

A reactor includes: a reactor body having a core; and an installation destination object on which the reactor body is mounted; wherein the reactor body has three fixing portions for fixing the reactor body to the installation destination object, the installation destination object has mount portions for mounting the fixing portions, and the reactor body is fixed to the installation destination object by the fixing portions being mounted on the mount portions.

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