Tamura Corporation

Saitama, Japan

Tamura Corporation

Saitama, Japan

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Patent
Tamura Corporation, Tokyo University of Agriculture and Technology | Date: 2017-03-15

Provided are: a semiconductor substrate comprising a -Ga_(2)O_(3) single crystal, on which an epitaxial layer comprising a -Ga_(2)O_(3) single crystal can be made to grow at a high growth rate using the hydride vapor phase epitaxy (HVPE) method; an epitaxial wafer comprising such semiconductor substrate and epitaxial layer; and a method for manufacturing such epitaxial wafer. As one embodiment of the present invention, provided is a semiconductor substrate (11), used as a base substrate for epitaxial crystal growth by the HVPE method, wherein the semiconductor substrate comprises a -Ga_(2)O_(3)-based single crystal and a plane parallel to the [010] axis of the -Ga_(2)O_(3) single crystal is used as the principal surface.


Patent
Tamura Corporation | Date: 2017-04-05

A solder composition of the invention includes: a flux composition containing a component (A) in a form of a rosin-based resin, a component (B) in a form of an activator and a component (C) in a form of a solvent; and a component (D) in a form of a solder powder. The component (B) in a form of the activator contains a component (B1) in a form of an aromatic carboxylic acid having a hydroxyl group or an acyl group at an ortho position or a pros position.


Patent
Tamura Corporation and Koha Co. | Date: 2017-05-10

Provided is a gallium oxide substrate which has less linear pits. Obtained is a gallium oxide substrate wherein the average density of linear pits in a single crystal surface is 1,000 pits/cm2 or less.


Patent
Tamura Corporation and Koha Co. | Date: 2017-05-03

A high-quality -Ga2O3 single-crystal substrate having little variation in crystal structure is provided. Provided in one embodiment is a -Ga203 single-crystal substrate 1 formed from a -Ga2O3 single crystal, wherein the principal surface is a plane parallel to the b axis of the -Ga203 single crystal and the maximum value of on any straight line on the principal surface which passes through the center of the principal surface is not more than 0.7264. is the difference between the maximum value and the minimum value obtained by subtracting a from s at each measurement position, where: s represents the angle formed by the incident direction of the X ray at the peak position of an X-ray rocking curve and the principal surface on the straight line; and a represents the angle on a straight approximation line obtained by using the method of least squares to linearly approximate the curve representing the relationship between the aforementioned s and the measurement position therefor.


Patent
Tamura Corporation and Koha Co. | Date: 2015-07-01

Provided is a gallium oxide substrate which has less linear pits. Obtained is a gallium oxide substrate wherein the average density of linear pits in a single crystal surface is 1,000 pits/cm2 or less.


Patent
Tamura Corporation, Tokyo University of Agriculture and Technology | Date: 2015-05-11

A semiconductor substrate for being used as a base substrate for epitaxial crystal growth by HVPE method includes a -Ga_(2)O_(3)-based single crystal, and a principal surface that is a plane parallel to a [010] axis of the -Ga_(2)O_(3)-based single crystal. An epitaxial wafer includes the semiconductor substrate, and an epitaxial layer that includes a -Ga_(2)O_(3)-based single crystal and is formed on the principal surface of the semiconductor substrate by epitaxial crystal growth using the HVPE method. A method for manufacturing the epitaxial wafer includes forming the epitaxial layer by epitaxial crystal growth using the HVPE method on the semiconductor substrate.


Patent
Tamura Corporation | Date: 2017-02-17

A semiconductor device includes a semiconductor layer including a Ga_(2)O_(3)-based single crystal, and an electrode that is in contact with a surface of the semiconductor layer. The semiconductor layer is in Schottky-contact with the electrode and has an electron carrier concentration based on reverse withstand voltage and electric field-breakdown strength of the Ga_(2)O_(3)-based single crystal.


Patent
Tamura Corporation | Date: 2017-06-14

Provided is a Ga_(2)O_(3)-based single crystal substrate capable of achieving a high processing yield. A Ga_(2)O_(3)-based single crystal substrate having a crack density of less than 0.05 cracks/cm can be obtained that has as a principal surface thereof a surface rotated 10-150 from the (100) plane, when a rotation direction from the (100) plane to the (001) plane via the (101) plane is defined as positive, having the [010] axis as the rotation axis.


Patent
Koha Co., Tamura Corporation and Japan National Institute of Materials Science | Date: 2017-03-16

According to one embodiment of the present invention, the light emitting device includes an LED element, a side wall which surrounds the LED element, a phosphor layer which is fixed to the side wall with an adhesive layer therebetween, and is positioned above the LED element, and a metal pad as a heat dissipating member. The side wall includes an insulating base which surrounds the LED element and a metal layer which is formed on a side surface at the LED element side of the base, and is in contact with the metal pad and the adhesive layer. The adhesive layer includes a resin layer that includes a resin containing particles which have higher thermal conductivity than the resin or a layer that includes solder.


Patent
Tamura Corporation | Date: 2016-06-02

A reactor includes: a reactor body having a core; and an installation destination object on which the reactor body is mounted; wherein the reactor body has three fixing portions for fixing the reactor body to the installation destination object, the installation destination object has mount portions for mounting the fixing portions, and the reactor body is fixed to the installation destination object by the fixing portions being mounted on the mount portions.

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