Saitama, Japan
Saitama, Japan

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Patent
Tamura Corporation, Tokyo University of Agriculture and Technology | Date: 2017-03-15

Provided are: a semiconductor substrate comprising a -Ga_(2)O_(3) single crystal, on which an epitaxial layer comprising a -Ga_(2)O_(3) single crystal can be made to grow at a high growth rate using the hydride vapor phase epitaxy (HVPE) method; an epitaxial wafer comprising such semiconductor substrate and epitaxial layer; and a method for manufacturing such epitaxial wafer. As one embodiment of the present invention, provided is a semiconductor substrate (11), used as a base substrate for epitaxial crystal growth by the HVPE method, wherein the semiconductor substrate comprises a -Ga_(2)O_(3)-based single crystal and a plane parallel to the [010] axis of the -Ga_(2)O_(3) single crystal is used as the principal surface.


Patent
Tamura Corporation | Date: 2017-04-05

A solder composition of the invention includes: a flux composition containing a component (A) in a form of a rosin-based resin, a component (B) in a form of an activator and a component (C) in a form of a solvent; and a component (D) in a form of a solder powder. The component (B) in a form of the activator contains a component (B1) in a form of an aromatic carboxylic acid having a hydroxyl group or an acyl group at an ortho position or a pros position.


Patent
Tamura Corporation and Koha Co. | Date: 2016-03-02

Provided is a method for growing a -Ga_(2)O_(3)-based single crystal, whereby it becomes possible to grow a -Ga_(2)O_(3)-based single crystal having a small variation in crystal structure and also having high quality in the direction of the b axis. In one embodiment, a method for growing a -Ga_(2)O_(3)-based single crystal is provided, which comprises a step of growing a flat-plate-shaped Sn-containing -Ga_(2)O_(3)-based single crystal in the direction of the b axis using a seed crystal.


Provided are: a method for cultivating a -Ga_(2)O_(3) single crystal which makes it possible to obtain a wide -Ga_(2)O_(3) seed crystal and is to be used in the cultivation of a flat -Ga_(2)O_(3) single crystal which minimizes widening of the shoulder in the width direction; a -Ga_(2)O_(3)-single-crystal substrate obtained by using the same; and a production method therefor. Provided is one embodiment which is a method for cultivating a -Ga_(2)O_(3) single crystal which uses the EFG method and includes: a step for raising a Ga_(2)O_(3) melt (12) inside a crucible (13) up to a die (14) opening (14b) via a die (14) slit (14a), and while the horizontal position of a seed crystal (20) is shifted in the width direction (W) from the width direction (W) center of the die (14), contacting the seed crystal (20) and the Ga_(2)O_(3) melt (12) in the opening (14b) of the die (14); and a step for pulling up the seed crystal (20) which contacted the Ga_(2)O_(3) melt (12), and growing the -Ga_(2)O_(3) single crystal (25).


A lead-free solder alloy includes: 1 wt % to 4 wt % of Ag; 0.5 wt % to 1 wt % of Cu; 1 wt % to 5 wt % of Sb; 0.05 wt % to 0.25 wt % of at least one of Ni and Co; and Sn.


Patent
Tamura Corporation and Riken | Date: 2016-02-23

A nitride semiconductor template includes a Ga_(2)O_(3 )substrate, a buffer layer that includes as a main component AlN and is formed on the Ga_(2)O_(3 )substrate, a first nitride semiconductor layer that includes as a main component Al_(x)Ga_(1-x)N (0.2


Patent
Tamura Corporation | Date: 2016-06-02

A reactor includes: a reactor body having a core; and an installation destination object on which the reactor body is mounted; wherein the reactor body has three fixing portions for fixing the reactor body to the installation destination object, the installation destination object has mount portions for mounting the fixing portions, and the reactor body is fixed to the installation destination object by the fixing portions being mounted on the mount portions.


Patent
Tamura Corporation | Date: 2016-02-10

Provided are: a Ga_(2)O_(3) single crystal substrate comprising a Ga_(2)O_(3) single crystal which has been made to have a high resistance while inhibiting a reduction in the crystal quality thereof; and a production method therefor. According to one embodiment of the present invention, provided is a production method for a Ga_(2)O_(3) single crystal substrate, said production method including: a step in which Fe is added to a Ga_(2)O_(3) starting material, and a Ga_(2)O_(3) single crystal (5) including Fe at a concentration higher than that of a donor impurity mixed therewith is grown from the Ga_(2)O_(3) starting material; and a step in which a Ga_(2)O_(3) single crystal substrate is cut from the Ga_(2)O_(3) single crystal (5).


Patent
Tamura Corporation | Date: 2016-05-20

A reactor includes a core, a resin cover provided around the core, and a coil disposed around the core at the external side of the resin cover. The coil includes a conductive wire having a self-fusing layer formed on the surface of the conductive wire, and the adjoining conductive wire portions are bonded together by the self-fusing layer. The resin cover includes a bonding portion provided at a part of the resin cover and facing the end portion of the coil, and the end portion of the coil are bonded with the resin cover by an adhesive at the bonding portion.


Patent
Tamura Corporation, Tokyo University of Agriculture and Technology | Date: 2016-08-10

Provided are: a method for efficiently growing a high-quality, large diameter -Ga_(2)O_(3)-based single crystal film; and a crystalline layered structure having a -Ga_(2)O_(3)-based single crystal film grown using this growing method. As one embodiment, the present invention provides a method for growing a -Ga_(2)O_(3)-based single crystal film by using the HVPE method, and including a step for exposing a Ga_(2)O_(3)-based substrate (10) to a gallium chloride gas and an oxygen-containing gas, and growing a -Ga_(2)O_(3)-based single crystal film (12) on the principal surface (11) of the Ga_(2)O_(3)-based substrate (10) at a growing temperature of 900 C or higher.

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