Tokyo, Japan
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Patent
Taiyo Nippon Sanso | Date: 2015-04-22

The present invention relates to a welding torch including a mounting jig for mounting a wire-aiming guide which feeds a welding wire toward a molten pool of a work piece, wherein the mounting jig has a male screw that can be screwed into a female screw provided in a torch body, and is detachably mounted to the torch body; and a mounting jig. The present invention provides the welding torch with which a wire-aiming guide can be stably mounted and which can mount a highly versatile wire-aiming guide; and the mounting jig.


A non-transferred plasma arc system, which is provided with a non-transferred plasma torch (1) that is provided with a non-consumable electrode (101) as a negative electrode and an insert chip as a positive electrode, the insert chip being cooled by a circulated coolant (W) and the insert chip releasing a plasma arc onto a workpiece. The plasma arc torch (1) comprises a TIG welding torch (100) that is provided with the non-consumable electrode (101), whereby an arc is generated between the workpiece and said electrode (101), and a torch nozzle (105), which releases a shield gas toward an arc-generated weld pool of the workpiece. The plasma arc torch (1) is provided with an attachment (51) that is detachably attached to the TIG welding torch (100) while surrounding the periphery of the torch nozzle (105) and that functions as the insert chip, whereby a non-transferred plasma arc is inexpensively and easily used.


Patent
University of Fukui, Hokuriku University and Taiyo Nippon Sanso | Date: 2015-02-18

The present invention provides a compound represented by the formula (I):


Patent
SPP Technologies Co. and Taiyo Nippon Sanso | Date: 2016-10-05

The invention provides a method capable of reducing carbon atom content ratio and/or hydrogen atom content ratio relative to contents of silicon atoms and nitrogen atoms in a silicon nitride film formed by a plasma CVD method using an organic silane as a material, as well as improving film quality such as electrical properties. A silicon nitride film according to the invention is formed by forming a plasma of an organic silane and at least one additive gas selected from the group consisting of hydrogen and ammonia by a plasma CVD method. The silicon nitride film has a carbon atom content ratio of less than 0.8 assuming that a sum of a silicon atom content and a nitrogen atom content in the silicon nitride film is 1. The silicon nitride film has a hydrogen atom content ratio of less than 0.9 assuming that a sum of the silicon atom content and the nitrogen atom content in the silicon nitride film is 1. The silicon nitride film has improved properties such as reduced leakage current, and thus achieves improvement in reliability of various devices including the silicon nitride film.


Patent
Taiyo Nippon Sanso and TNCSE Ltd. | Date: 2016-01-05

Disclosed is a rotation/revolution type vapor phase growth apparatus that allows for automatic meshing between an external gear and an internal gear. In the apparatus, on tooth side surfaces of at least one kind of a plurality of external gear members provided rotatably in a circumferential direction of an outer periphery of a disk-shaped susceptor and a ring-shaped fixed internal gear member having an internal gear to mesh with the external gear members, there is provided a guide slope that abuts against a tooth side surface of the other kind of the gear member(s) to guide both kinds of the gear members into a meshed state when both kinds of the gear members move from a non-meshed state to the meshed state.


Patent
Mitsubishi Aluminum Co. and Taiyo Nippon Sanso | Date: 2014-11-19

In order to enable a satisfactory fluxless brazing without needing flux or vacuum facilities, a brazing object including an aluminum alloy material provided with an Al-Si-Mg brazing filler metal is joined by the Al-Si-Mg brazing filler metal without the use of flux by heating the aluminum alloy material, when raising the temperature in a brazing furnace, at least in a temperature range of 450C to before melting of the filler metal under a first inert gas atmosphere having an oxygen concentration of preferably 50 ppm and following by heating at least at or above a temperature at which the filler metal starts to melt under a second inert gas atmosphere having an oxygen concentration of preferably 25 ppm and a nitrogen gas concentration of preferably 10% by volume or less. The oxygen concentration and nitrogen concentration in the atmosphere in the course of brazing are controlled in this way, whereby the reliability of a joint is remarkably improved, compared with conventional fluxless brazing methods, while suppressing cost increases as much as possible.


A method for producing a fluorine-containing substituted compound, the method including: introducing an organofluorine compound and an organolithium compound into a microreactor provided with a flow path capable of mixing a plurality of liquids, to thereby obtain a reaction product; and introducing, into the microreactor, the reaction product and an electrophile exhibiting electrophilic effect on the reaction product, to thereby obtain a fluorine-containing substituted compound.


Patent
Taiyo Nippon Sanso | Date: 2016-01-06

One object of the present invention is to provide an air separation method and an air separation apparatus which can collect a larger amount of nitrogen gas, liquefied oxygen, and liquefied nitrogen which have higher pressure than the operating pressure in the low-pressure column while inhibiting a decrease of the argon recovery, and the present invention provides an air separation method comprising a step in which the low-pressure liquefied oxygen at the bottom part of the low-pressure column is reboiled by the argon gas at the top part of the argon column and the middle-pressure nitrogen gas at the top part of the middle-pressure column, and a step in which the middle-pressure liquefied oxygen at the bottom part of the argon column is reboiled by the high-pressure nitrogen gas at the top part of the high-pressure column.


Patent
Taiyo Nippon Sanso | Date: 2015-02-18

A distillation apparatus of the present invention includes: a distillation column group in which a plurality of distillation columns (D1, D2, D3), which are respectively equipped with a reboiler (R1, R2, R3), is connected in the form of a distillation cascade; feed-gas condensers (C2, C3) which liquefy feed gases from respective former distillation columns (D1, D2) and feed said liquefied feed gases to respective latter distillation columns (D2, D3); gas-feeding lines (Q_(A)2, Q_(A)3) which connect the respective former distillation columns (D1, D2) and the respective feed-gas condensers (C2, C3); and liquid-feeding lines (Q_(G)2, Q_(G)3) which connect the respective feed-gas condensers (C2, C3) and the respective latter distillation columns (D2, D3).


Patent
Taiyo Nippon Sanso | Date: 2015-08-26

The present invention provides a method for enriching an oxygen isotope which, when distilling a large amount of a nitric oxide raw material, enables the oxygen isotope to be enriched without requiring regular replenishment of large amounts of the nitric oxide raw material and with a small liquid NO hold-up volume, without reducing the separation efficiency for the oxygen isotope. By performing a chemical exchange between a water acquired by adding hydrogen to an oxygen having a crudely enriched oxygen isotope produced by a first distillation device (11), and a nitric oxide discharged from a second distillation device (12), a nitric oxide having an enriched concentration of the oxygen isotope and a water having a reduced concentration of the oxygen isotope are obtained, and the nitric oxide having an enriched concentration of the oxygen isotope is supplied to the second distillation device (12), while an oxygen obtained by electrolysis of the water having a reduced concentration of the oxygen isotope is returned to the first distillation device (11).

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