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Hsinchu, Taiwan

Taiwan Semiconductor Manufacturing Company, Limited , also known as Taiwan Semiconductor, is the world's largest dedicated independent semiconductor foundry, with its headquarters and main operations located in the Hsinchu Science and Industrial Park in Hsinchu, Taiwan. Wikipedia.


Patent
Taiwan Semiconductor Manufacturing Company | Date: 2016-01-12

A semiconductor device includes a moveable element over a substrate, wherein the moveable element is moveable relative to the substrate. The semiconductor device further includes a first anchor portion connected to the substrate; and a second anchor portion connected to the substrate on an opposite side of the moveable element from the first anchor portion. The semiconductor device further includes a first connector configured to connect the moveable element to the first anchor portion. The semiconductor device further includes a second connector configured to connect the moveable element to the second anchor portion. The semiconductor device further includes a conductive wire loop on the moveable element; and a connection wire electrically connected to a first end of the conductive wire loop, wherein the connection wire extends across the first connector to the first anchor portion.


Patent
Taiwan Semiconductor Manufacturing Company | Date: 2016-01-13

The present disclosure provides an embodiment of an integrated structure that includes a first electrode of a first conductive material embedded in a first semiconductor substrate; a second electrode of a second conductive material embedded in a second semiconductor substrate; and a electrolyte disposed between the first and second electrodes. The first and second semiconductor substrates are bonded together through bonding pads such that the first and second electrodes are enclosed between the first and second semiconductor substrates. The second conductive material is different from the first conductive material.


Patent
Taiwan Semiconductor Manufacturing Company | Date: 2016-01-08

A device includes a patch antenna, which includes a feeding line, and a ground panel over the feeding line. The ground panel has an aperture therein. A low-k dielectric module is over and aligned to the aperture. A patch is over the low-k dielectric module.


Patent
Taiwan Semiconductor Manufacturing Company | Date: 2016-01-12

A method for forming an integrated circuit device includes forming a dielectric layer onto a first substrate, forming a sacrificial material into a sacrificial cavity formed into the dielectric layer, forming a membrane layer over the dielectric layer and sacrificial material, releasing the sacrificial material through at least one via formed through the membrane layer, and bonding a capping substrate to the membrane layer such that a second cavity is formed, the second cavity being connected to the sacrificial cavity though a via formed into the membrane layer.


Patent
Taiwan Semiconductor Manufacturing Company | Date: 2016-01-08

Disclosed is a mask for use in a lithography system having a defined resolution. The mask comprises first and second patterns that are greater than the defined resolution and a sub-resolution feature that is less than the defined resolution. Portions of the first and second patterns are positioned close to each other and separated by the sub-resolution feature in an intersection area. The size and shape of the sub-resolution feature are such that when the mask is used in the lithography system, a resulting pattern includes the first and second patterns interconnected with each other through the interconnection area.

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