Agency: Department of Energy | Branch: | Program: SBIR | Phase: Phase I | Award Amount: 150.00K | Year: 2011
Current technology for detecting long wavelength and very long wavelength infrared light, such as mercury cadmium telluride-based sensors, suffers from deleterious characteristics such as high noise and high cost. Creating detectors that operate in this wavelength range that reduce noise and cost will foster further implementation into remote sensing systems. SVT Associates proposes an innovative photodiode design based on strain-compensated type-II superlattice structure to improve very-long-wavelength infrared (VLWIR) detection. The end result of the combined Phase I Phase II effort will be a new generation of robust photodiodes and focal plane arrays capable of infrared detection beyond wavelengths of 30 microns. Commercial Applications and Other Benefits: Photo detector arrays using this material are of great interest to the DOE for various applications including, in particular, imaging and remote sensing. These VLWIR photo detectors can also find application to infrared-based chemical identification systems and terrestrial mapping. Applying the detection improvement in VLWIR region, dark current suppression and impurity reduction process to the superlattice should result in higher optical absorption, higher operating temperature, higher material purity, and very low dislocation density, all important factors that should significantly enhance device operation in 300-1000 cm-1 region.
Agency: Department of Energy | Branch: | Program: SBIR | Phase: Phase I | Award Amount: 149.56K | Year: 2011
The negative-electron-affinity (NEA) photocathodes which produce polarized electrons are a vital component of electron accelerators such as that at the Stanford Linear Accelerator Center (SLAC), which is used in the current generation of photocathodes. Quantum efficiencies thus far are on the order of 1%, meaning only 1% of the photons hitting the photocathode result in the emission of an electron. Increasing the quantum efficiency is vital to increasing the usable electron current. The end result of the combined Phase I Phase II effort will be a new generation of robust photocathodes capable of yielding intense, highly polarized electron beams for use in advanced electron colliders. We have previously achieved & gt 85% polarization using a strained-superlattice formed from alternating layers of GaAs and GaAsP approximately ten monolayers thick. For this program we will increase the quantum efficiency and extractable polarization current by adding an optical reflector to the design. Commercial Applications and Other Benefits: Spin polarized low energy electron microscopes (SPLEEM) and future colliders will benefit from a polarized electron beam with increased intensity.
Agency: National Aeronautics and Space Administration | Branch: | Program: SBIR | Phase: Phase I | Award Amount: 99.69K | Year: 2011
SVT Associates proposes an innovative digital alloy technique to extend the cutoff wavelength of InAsSb beyond 5 um, a wider band gap InAlAsSb layer inserted into depletion region to suppress dark current, and atomic layer deposition technique to coat radiation-hard material AlN on InAsSb detectors grown on GaSb substrate. This digital alloy InAsSb material system is capable of infrared detection between 0.4-5 um, depending on layer thickness of the period of each digital ultra thin superlattice. The goal of this program is to develop InAsSb-based FPA for 0.4-5 um detection at room temperature. Photo detector arrays using this material are of great interest to the NASA for various applications including, in particular, imaging and optical detection, and object discrimination when tracking targets in space or performing astronomical observations. These MWIR photo detectors can also find application to infrared-based chemical identification systems and terrestrial mapping. Applying the dark current suppression and cutoff wavelength extension process to the InAsSb-based detectors should result in higher operating temperature, extended cutoff wavelength, and radiation-hard devices, all important factors that should significantly enhance FPA operation. We intend to characterize the positive effects of proposed techniques in Phase I. In Phase II we will refine the techniques to realize high-performance MWIR FPAs operating at ambient temperatures.
Agency: National Aeronautics and Space Administration | Branch: | Program: SBIR | Phase: Phase I | Award Amount: 99.95K | Year: 2011
This proposal is directed toward the development of innovative high-efficiency UV photocathodes based on the wide bandgap III-nitride semiconductors for reliable operation at high temperature and high radiation environments for future NASA missions near the Sun and in deep atmospheres of Venus and Jupiter. The proposed work includes the incorporation of these photocathodes on Al2O3-based high-temperature micro-channel plates (MCPs) for high-sensitivity UV photon counting and imaging
Agency: National Aeronautics and Space Administration | Branch: | Program: SBIR | Phase: Phase I | Award Amount: 99.98K | Year: 2010
In this SBIR Phase I program, we propose to fabricate high-efficiency and radiation hard solar cells based on InGaN material system that can cover the whole solar spectrum by adjusting the alloy composition. The main program objectives include the fabrication of InGaN-based solar cells on large diameter substrates, with external efficiency in excess of 35%, and capable of long life operation in high radiation environment of space at elevated temperatures.