Suzhou Rui Hong Electronic Chemicals Co.

Suzhou, China

Suzhou Rui Hong Electronic Chemicals Co.

Suzhou, China

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Li H.,Key Laboratory of Food Colloids and Biotechnology Ministry of Education | Liu J.,Key Laboratory of Food Colloids and Biotechnology Ministry of Education | Zheng X.,Suzhou Rui Hong Electronic Chemicals Company | Ji C.,Suzhou Rui Hong Electronic Chemicals Company | And 3 more authors.
Journal of Applied Polymer Science | Year: 2015

Novel branched copolymers, poly(styrene-alt-maleic anhydride) (BPSMA), were synthesized through mercapto chain-transfer polymerization with styrene, maleic anhydride (MA), and 4-vinyl benzyl thiol (VBT). Then, the hydroxyl of hydroxyethyl methacrylate was reacted with MA to synthesize branched photosensitive copolymers, p-BPSMAs. Fourier transform IR spectroscopy and 1H-NMR indicated that the synthesis was successful. Gel permeation chromatography indicated that the molecular weight decreased with increasing content of VBT. The thermal properties were characterized by thermogravimetric analysis; the results show that the thermal decomposition temperature of the BPSMAs was greatly enhanced. Real-time IR was used to evaluate the UV-curable kinetics of the p-BPSMAs; the results show that the p-BPSMAs could rapidly photopolymerize under UV irradiation in the presence of photoinitiators. Moreover, the photoresist based on the p-BPSMAs exhibited improved photosensitivity when the VBT content increased, and the photoresist with 12 mol % VBT content had a low value of the dose that retained 50% of the original film thickness (10 mJ/cm2), and a 50-μm resolution could be achieved compared to a linear photoresist. © 2015 Wiley Periodicals, Inc. J. Appl. Polym. Sci. 2015, 132, 42838. © 2015 Wiley Periodicals, Inc. September 2015 10.1002/app.42838 Article Articles © 2015 Wiley Periodicals, Inc..


Lin L.,Jiangnan University | Xu W.,Jiangnan University | Liu J.,Jiangnan University | Liu R.,Jiangnan University | And 2 more authors.
Yingxiang Kexue yu Guanghuaxue/Imaging Science and Photochemistry | Year: 2016

A series of methacrylate copolymers PMBBH were synthesized through reversible addition-fragmentation chain tansfer polymerization (RAFT). Methacrylic acid (MAA), benzyl methacrylate (BZMA), and hydroxyethyl methacrylate (HEMA) were used as comonomers. Azobisisobutyronitrile (AIBN) was used as an initiator and 2-(dodecylsulfanylthiocarbonylsulfanyl)-2-methylpropionic acid(DMP) as the chain transfer agent. The structure and properties of polymers were characterized by fourier transform infrared spectroscopy (FT-IR), proton nuclear magnetic resonance spectroscopy (1HNMR) and gel permeation chromatography (GPC). Negative photoresist based on PMBBH was prepared. Effect of molecular weight on the resolution of photoresist had been examined. The results showed that photoresist based on PMHBB-2 with the number-average molecular weight of 5.45×103 g/mol and the weight-average molecular weight of 7.79×103 g/mol exhibited the best performance with sub-50 μm resolution. © 2016, Science Press. All right reserved.


Li H.,Jiangnan University | Liu J.,Jiangnan University | Zheng X.,Jiangnan University | Ji C.,Jiangnan University | And 3 more authors.
Journal of Polymer Research | Year: 2016

KrF photoresist polymers (PASTMs) were prepared via reversible addition-fragmentation chain transfer (RAFT) polymerization. Four (meth)acrylates with lithographic functionalities including styrene (St), 4-acetoxystyrene (AST), 2-methyl-2-adamantyl methacrylate (MAMA), and tert-butyl acrylate(TBA) were used as monomer components and 2-methyl-2-[(dodecylsulfanylthiocarbonyl) sulfanyl]propanoic acid (MDFC) was used as RAFT agent, varying the RAFT content could modulate molecular weight. Fourier-transform infrared spectroscopy (FT-IR) and proton nuclear magnetic resonance (1H NMR) indicated that the synthesis was successful. Gel permeation chromatography (GPC) showed that the molecular weight decreased with the increased content of MDFC, and all the polymers possessed weight-average molecular weight below ten thousand and polydispersity less than 1.32. Thermogravimetric analysis (TGA) characterized the thermal properties, the results implied that initial thermal decomposition temperature reached 200 °C, which could satisfy the lithography process. Differential scanning calorimetry (DSC) showed that the Tg decreases with molecular weight. The RAFT polymerization kinetics plots demonstrated that the polymerization was first-order, the number-average molecular weights of the polymers with relatively low polydispersity index values increased with total monomer conversions indicating that the concentration of growing radicals was constant throughout the polymerization process. The narrow molecular weight distribution and composition uniformity of the polymers prepared by RAFT polymerization could be beneficial for lithography, after alcoholysis, lithography evaluation under KrF lithography showed that this homogeneous polymer photoresist exhibited better space and line (S/L) pattern with resolution of 0.18 μm according to the SEM image. © 2016, Springer Science+Business Media Dordrecht.


Liu J.,The Key Laboratory of Food Colloids and Biotechnology | Liu J.,Jiangnan University | Zheng X.,The Key Laboratory of Food Colloids and Biotechnology | Zheng X.,Jiangnan University | And 7 more authors.
Polymer Bulletin | Year: 2015

A series of novel branched methacrylate copolymers (BPMBMV) were synthesized via the mercapto chain transfer polymerization using methacrylic acid, maleic anhydride, benzyl methacrylate, and 4-vinyl benzyl thiol. Then, BPMBMV reacted with hydroxyethyl acrylate to obtain branched UV-curable copolymer H-BPMBMV, which were characterized by fourier transfer infrared spectra and proton nuclear magnetic resonance spectra. The molecular weights and glass transition temperature (Tg) of the polymers decreased with the addition of VBT. The results of photo-differential scanning calorimetry (Photo-DSC) tests showed that photo-polymerization ability of H-BPMBMV increased with the increased content of VBT. With an optimized formulation, a negative-type photoresist was prepared. The resolution of the circuit could reach as high as 20 μm, and the film of photoresist showed good acid resistance. © 2014, Springer-Verlag Berlin Heidelberg.


Liu J.,Jiangnan University | Liu Q.,Jiangnan University | Zheng X.,Jiangnan University | Liu R.,Jiangnan University | And 2 more authors.
Polymer Bulletin | Year: 2015

Two kinds of UV-curable polyurethane acrylates (PCDL-H-PUA and PCDL-P-PUA) were synthesized starting with polycarbonate diols (PCDL), isophorone diisocyanate and dimethylolpropionic acid and terminated with hydroxyethyl methacrylate or pentaerythritol triacrylate to impart mono-methacrylate or tri-acrylate end-group functionality, respectively. The structures and properties of the products were characterized by Fourier transform infrared spectroscopy, proton nuclear magnetic resonance spectroscopy, gel permeation chromatography and thermogravimetric analysis. The average molecular weights were between 7500 and 9300 g/mol, and the thermal properties of the products were excellent. The influence of the functionality of the end-capping functional group on the UV-curing behavior was investigated using real-time spectroscopy. Results showed that curing rate and conversion of PCDL-P-PUA were higher than those of PCDL-H-PUA, and the final double bond conversion of the polymers reached 95 %. PCDL-H-PUA and PCDL-P-PUA were applied to negative photoresists as the main film resin. The resolution of the optimal photoresist reached 40 µm. © 2015 Springer-Verlag Berlin Heidelberg


Li H.,Jiangnan University | Liu J.,Jiangnan University | Zheng X.,Suzhou Rui Hong Electronic Chemicals Company | Ji C.,Suzhou Rui Hong Electronic Chemicals Company | And 3 more authors.
Journal of Applied Polymer Science | Year: 2016

Novel branched copolymers, poly(styrene-alt-maleic anhydride) (BPSMA), were synthesized through mercapto chain-transfer polymerization with styrene, maleic anhydride (MA), and 4-vinyl benzyl thiol (VBT). Then, the hydroxyl of hydroxyethyl methacrylate was reacted with MA to synthesize branched photosensitive copolymers, p-BPSMAs. Fourier transform IR spectroscopy and 1H-NMR indicated that the synthesis was successful. Gel permeation chromatography indicated that the molecular weight decreased with increasing content of VBT. The thermal properties were characterized by thermogravimetric analysis; the results show that the thermal decomposition temperature of the BPSMAs was greatly enhanced. Real-time IR was used to evaluate the UV-curable kinetics of the p-BPSMAs; the results show that the p-BPSMAs could rapidly photopolymerize under UV irradiation in the presence of photoinitiators. Moreover, the photoresist based on the p-BPSMAs exhibited improved photosensitivity when the VBT content increased, and the photoresist with 12 mol % VBT content had a low value of the dose that retained 50% of the original film thickness (10 mJ/cm2), and a 50-μm resolution could be achieved compared to a linear photoresist. © 2015 Wiley Periodicals, Inc. J. Appl. Polym. Sci. 2016, 133, 42838. © 2015 Wiley Periodicals, Inc.


Wei W.,Jiangnan University | Liu J.,Jiangnan University | Li H.,Jiangnan University | Mu Q.,Suzhou Rui Hong Electronic Chemicals Co. | Liu X.,Jiangnan University
Progress in Chemistry | Year: 2014

Photoresist is the indispensable and key material used for fabricating large-scale and super-large-scale integrated circuits in microelectronic industry. Due to its strategic role in the construction of national economy and national defense, photoresist has aroused great attention of researchers. Since the birth of the first integrated circuit board in 1959, photoresist has gradually evolved from the resists used for traditional ultraviolet (UV) photolithography, including early polyvinyl cinnamate, cyclized rubber/azide system, near-UV (436-nm G-line and 365-nm I-line) novolac/diazonaphthoquinone photoresists, deep-UV (DUV, 248-nm and 193-nm) and vacuum-UV (157-nm) photoresists, to the resists used for the so-called next generation lithography (NGL), such as extreme-UV lithography (EUVL), electron-beam lithography (EBL), nanoimprint lithography (NIL), block copolymer lithography (BCL), and scanning probe lithography (SPL). In this review, the above evolution of photoresist and its research progress are summarized based on a large amount of literature. Thereinto, DUV chemically amplified photoresists are focused, including matrix resins, photoacid generators, and additives (for example, dissolution inhibitors and basic compounds). In addition, the recent research achievements of the resists for EUVL, EBL, NIL, BCL, and SPL are also highlighted. Finally, the prospect and research directions of photoresist in the future are briefly discussed. ©, 2014, Chinese Academy of Sciences. All right reserved.


Wang K.,Jiangnan University | Liu J.,Jiangnan University | Liu R.,Jiangnan University | Mu Q.,Suzhou Rui Hong Electronic Chemicals Co. | And 3 more authors.
Yingxiang Kexue yu Guanghuaxue/Imaging Science and Photochemistry | Year: 2016

With the rapid development of the micro-electronics industry, lithography technology has been moving forward to a higher resolution. Bottom anti-reflective coating has attracted great attention of researchers in terms of effectively eliminating the standing wave effect and the notching effect, improving the critical dimension uniformity and the patterning resolution. In this article, the photoresists and photolithography technique, and the classification, basic principle, etching process and development situation of the bottom anti-reflective coating are briefly reviewed. The latest research progress of the bottom anti-reflective coating is summarized in detail, especially the application of developable bottom anti-reflective coating in photoresist. Finally, the prospect and research directions of bottom anti-reflective coating in the future are also introduced. © 2016, Science Press. All right reserved.


Liu J.,Jiangnan University | Zheng X.,Jiangnan University | Lin L.,Jiangnan University | Mu Q.,Suzhou Ruihong Electronic Chemicals Co. | And 2 more authors.
Yingxiang Kexue yu Guanghuaxue/Imaging Science and Photochemistry | Year: 2015

Methacrylic Acid (MAA), Methyl Methacrylate (MMA), N-Phenylmaleimide (N-PMI) and Methacrylic Acid Cyclohexyl Ester (CHMA) were used to synthesize copolymer with different content of N-Phenylmaleide (N-PMI) through free radical polymerization to develop a prepolymer(PMMNC). Then a methacrylate copolymer G-PMMNC was prepared by reaction of the PMMNC and Glycidyl Methacrylate (GMA). Fourier transform infrared spectroscopy (FT-IR), nuclear magnetic resonance spectroscopy (1HNMR), gel permeation chromatography (GPC), and differential scanning calorimetry (DSC) were used to characterize the structure and properties of copolymers. The results showed that the molecular weight and the glass transition temperature of copolymers increased with the increase of the content of N-PMI. Negative-photoresists based on G-PMMNC were prepared, the resolution of which could reach 40 μm, and have a good acid etching resistance. ©, 2015, Science Press. All right reserved.

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