Time filter

Source Type

Jin X.,Xiangtan University | Jin X.,Superpix Micro Technology Company | Jin X.,University of Western Ontario | Liu Z.,Superpix Micro Technology Company | And 3 more authors.
2010 Symposium on Photonics and Optoelectronic, SOPO 2010 - Proceedings | Year: 2010

This paper presents about the design and fabrication of a cost effective and portable system for real time monitoring and data analysis of cell cultivation applications based on CMOS sensor and microfluidic technology. The digital CMOS sensor has 2-Mpixel resolution and output digital data that is designed and fabricated on the 0.18um CMOS image process. The Chip has integrated with low noise 2 shared 2.25T pinned photodiode active pixel, noise reduction circuit, analog to digital converter and timing control circuits. The module based on the 2-Mpixel CMOS sensor has two focuses that can capture the image of the business card so that the monitoring system is so compact and low power. In this paper, one microfluidic product has been fabricated based on the MEMS process that applies for cell cultivation. The online monitoring and analytical system uses CMOS image sensor to capture the image of the microfluidic applications and a field programmable gate array (FPGA) chip to process the captured image. The final image can be displayed in the monitor or be sent to computer to be stored. This technique can be utilized in monitoring the cell size lying on the pixel size of CMOS sensor. In this paper, the monitoring cell size is large than 2.8um for the pixel size of CMOS sensor is 2.8um. The advantages of this system not only provide miniaturization and minimum cost, but also offer many advantages over conventional laboratory experiments, such as low energy LED light, parallel and fast microfluidic chip, high resolution CMOS sensor, fast and accurate test, low cost and consumption, etc. ©2010 IEEE.


Jin X.,Xiangtan University | Jin X.,Superpix Micro Technology Company | Zeng Y.,Xiangtan University
2010 International Conference on Measuring Technology and Mechatronics Automation, ICMTMA 2010 | Year: 2010

In this paper, a kind of nanoscale gap microlens array is designed and fabricated on 2.8um pixels based on 0.18um CMOS imager process to increase the photodetector sensitivity and to decrease the optical crosstalk. Both imaging techniques of SEM and atomic force microscopy (AFM) have been adopted to study surface structure. Especially, AFM's probe can touch the sample surface and AFM is suitable all material surface. It is first to adopt the AFM to investigate the surface topography of microlens array that provide detailed topographical information about microlens features. As a result of this study, nanoscale gap microlens array has been successfully designed and fabricated whose gap is about 117nm. This nanoscale gap microlens array can be widely integrated onto photo-detector products to improve the light collection efficiency, increase the pixel fill factor and reduce the optical crosstalk. © 2010 IEEE.


Jin X.,Xiangtan University | Jin X.,Superpix Micro Technology Company | Liu Z.,Superpix Micro Technology Company
Optical Engineering | Year: 2010

We propose a fully digital programmable gain amplifier scheme that overcomes the clipped noise analog-to-digital converter (ADC) for complementary metal-oxide semiconductor (CMOS) image sensors. Adopting the new digital programmable gain amplifier (DPGA) scheme, it obtains low noise and low power usage, has a small size, and high robust gain characteristic. To reduce the clipping noise, one new current controling the reference voltage of a 9-bit flash ADC is brought about in this work. Using the fully digital amplification scheme with reduced clipping noise ADC solves almost all the problems of the conventional analog programmable gain amplifier (APGA) scheme, which has large noise, large power, and big chip size due to APGA, and two analog autozero loop (both clamping circuit loop and offset correction loop) circuits. Based on a 0.18-μm CMOS image sensor process, one product of video graphic array (VGA) format CMOS image sensor is fabricated. The silicon test shows a 68-dB dynamic range with the power consumption of 80 mW at 24 MHz and the total noise of about 2 mV (at 30 fps and 27 deg). © 2010 SPIE.


Jin X.,SuperPix Micro Technology Ltd. | Jin X.,Xiangtan University | Jin X.,University of Western Ontario | Fan X.,SuperPix Micro Technology Ltd. | And 6 more authors.
IEEE Transactions on Electron Devices | Year: 2010

This paper describes the difference between normal microlenses and zero-space microlenses in image sensors. The investigation of both sensitivity and crosstalk has been implemented for normal microlenses and zero-space microlenses that are fabricated on a 2.8-μm pinned photodiode array of 640 (row) by 480 (column) based on an 0.18-μm -CMOS process. The simulation results show that the zero-space microlens technology increases the pixel sensitivity by about 75.61% and decreases the crosstalk by about 9.4% compared to the normal microlens technology. This paper presents the sensitivity analysis of both normal microlenses and zero-space microlenses based on the wafer test data from the Teradyne IP750, which is a special wafer test platform for CMOS sensors. The results of the statistical data of the wafer test show that the sensitivity of the zero-space microlenses has been improved by about 73.6% on the red pixel (69.6% on the green pixel and 76.3% on the blue pixel) compared with that of the normal microlenses. Using a similar statistical method, the crosstalk characteristics of both the zero-space microlenses and the normal microlenses have been measured as well. Compared with the normal microlenses, the testing results show that the crosstalk of green light in red light is reduced by about 7.244% and the crosstalk of blue light in red light is reduced by about 41.447% due to the use of the zero-space microlens technology. More importantly, this paper also provides the comparison and analysis of the real images taken by CMOS image sensors with the normal microlenses and the zero-space microlenses, respectively. From the comparison of image results, the image luminance of the zero-space microlenses is higher than that of the normal microlenses, and the image definition of the zero-space microlenses is clearer than that of the normal microlenses as well. So far, the silicon results show that the zero-space microlens technology is a better choice than the normal microlens technology for CMOS image sensors of a small-size pixel. © 2009 IEEE.


Jin X.,Xiangtan University | Jin X.,Superpix Micro Technology Company | Liu Z.,Superpix Micro Technology Company
2010 Symposium on Photonics and Optoelectronic, SOPO 2010 - Proceedings | Year: 2010

A digital color 3.2-Mpixel CMOS imager has been realized in a standard 0.18um CMOS technology. This chip has integrated with a proposed high dynamic range programmable gain amplifier using the nonlinear function to satisfy the human eye response. For reducing the noise level before analog-to-digital converter, a low noise 2-shared 2.25T pinned photodiode active pixel and a correlated double sample circuit have designed into the chip. The 3.2Mpixel CMOS imager has integrated with the row/column decoder, analog signal process, timing control and simple digital signal process, so that the sensor can be directly connected with a microprocessor or computer. The pinned photodiode active pixel achieves a conversion gain of 750uV/electron, 1.2mv voltage noise level and 72dB dynamic range under the 12 fps video rate, the dark condition and 27 degrees. Also, 0.3% peak-to-peak fixed pattern noise has obtained. The chip area is 28.69mm2 that produces 24 bit RGB video at 12 frames per second (fps) under the clock of 108MHz. Total power dissipation is less than 95mW from both 2.8V analog supply and 1.8V digital supply. The developed CMOS imager technology improves the performance of image to a level comparable to CCD so that the 3.2M-pixel CMOS image can be applied for 3G camera mobile phone. ©2010 IEEE.


Jin X.,Superpix Micro Technology Company | Jin X.,University of Western Ontario | Fan X.,Superpix Micro Technology Company | Liu Z.,Superpix Micro Technology Company | And 2 more authors.
Microelectronic Engineering | Year: 2010

The microlens has been widely applied to improve the sensitivity and to decrease the spatial crosstalk of image sensors. In order to further decrease the pixel size while improve the image quality, the zero gap microlens has been proposed to make high performance image sensors. In this paper, both the traditional microlens and zero gap microlens are fabricated using TOWER and TOPPAN processes. And their performances are compared and evaluated. The results show that the least sensitivity of the zero gap microlens has been significantly improved by more than 45.8% compared to that of the traditional microlens. The use of the zero gap microlens results in an obvious decrease of the crosstalk among blue, green and red lights. For example, the crosstalk of blue light in red light under the green irradiation has been decreases about 1.33%, and the crosstalk of red light in blue light under the blue irradiation has showed about 2.429 times decrease. Overall, the output colour image of the zero gap microlens is brighter and clearer than that of the traditional microlens. Image quality has been significantly improved due to the use of the zero gap microlens. © 2009 Elsevier B.V. All rights reserved.


Jin X.,SuperPix Micro Technology Ltd | Jin X.,University of Western Ontario | Liu Z.,SuperPix Micro Technology Ltd | Chen J.,SuperPix Micro Technology Ltd
Chinese Optics Letters | Year: 2010

A digital still camera image processing system on a chip, different from the video camera system, is presented for mobile phone to reduce the power consumption and size. A new color interpolation algorithm is proposed to enhance the image quality. The system can also process fixed patten noise (FPN) reduction, color correction, gamma correction, RGB/YUV space transfer, etc. The chip is controlled by sensor registers by inter-integrated circuit (I2C) interface. The voltage for both the front-end analog and the pad circuits is 2.8 V, and the volatge for the image signal processing is 1.8 V. The chip running under the external 13.5-MHz clock has a video data rate of 30 frames/s and the measured power dissipation is about 75 mW. © 2010 Chinese Optics Latters.


Li Z.,CAS Institute of Microelectronics | Liu Y.,CAS Institute of Microelectronics | Kuang Z.,Superpix Micro Technology Co. | Chen J.,CAS Institute of Microelectronics
Journal of Semiconductors | Year: 2014

This paper presents a capacitor-free CMOS low dropout voltage regulator which has high PSR performance and low chip area. Pole splitting and g m boosting techniques are employed to achieve good stability. The capacitor-free chip LDO was fabricated in commercial 0.18 μm CMOS technology provided by GSMC (Shanghai, China). Measured results show that the capacitor-free LDO has a stable output voltage 1.79 V, when supply voltage changes from 2.5 to 5 V, and the LDO is capable of driving maximum 100 mA load current. The LDO has high power supply rejection about -79 dB at low frequency and -40 dB at 1 MHz frequency, while sacrifice of the LDO's active chip-area is only smaller than 0.02 mm2. © 2014 Chinese Institute of Electronics.

Loading Superpix Micro Technology Co. collaborators
Loading Superpix Micro Technology Co. collaborators