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Konstanz, Germany

Beaucarne G.,Dow Corning | Schubert G.,Sunways AG | Hoornstra J.,Energy Research Center of the Netherlands | Horzel J.,IMEC | Glunz S.W.,Fraunhofer Institute for Solar Energy Systems
Energy Procedia | Year: 2011

The Third Workshop on Metallization for Crystalline Silicon Solar Cells was held in Charleroi, Belgium on 25 and 26 October 2011. This paper reports on the different contributions and discussions that took place. Great progress has recently been achieved in paste development, which yet again has stretched the lifetime of screen-printed metallization technology. Nevertheless, a transition towards Cu plating-based metallization is anticipated, and solutions to the different challenges were presented and discussed. © 2012 Published by Elsevier Ltd. Source

The present invention relates to a circuit arrangement for electrical installations for converting and adapting a DC voltage of a voltage source, more particularly for a solar inverter of a photovoltaic installation, having an electrical output, which can be coupled to an inverter, wherein, at the electrical output, a potential in a positive branch of an intermediate circuit of the electrical installation can be increased in such a way that an output potential of a negative pole of the voltage source assumes a value greater than the potential of the negative pole before the increase, or the potential in a negative branch of the intermediate circuit of the electrical installation can be reduced in such a way that an output potential of a positive pole of the voltage source assumes a value lower than the potential of the positive pole before the reduction, and having a compensation device designed for compensating for the electrical power between the positive branch of the intermediate circuit of the electrical installation and the negative branch of the intermediate circuit of the electrical installation during the operation of the circuit arrangement. The present invention furthermore relates to a method and a photovoltaic installation.

Sunways AG | Date: 2012-01-13

The invention relates to a current measuring device for detecting a current flowing through a power line, said device comprising: a magnetic loop for receiving the power line; an excitation device designed to magnetise the magnetic loop by means of a periodic signal; a first current sensor designed to detect an exciting current flowing in the excitation device on the basis of the periodic signal and/or the current to be detected; and a determination device that determines a shift of the detected exciting current on the current axis, said shift being caused by the current, and, as a result, deduces the intensity of the current to be detected. The invention also relates to a solar inverter and to a method for detecting a current.

Urrejola E.,ISC Konstanz | Peter K.,Sunways AG | Plagwitz H.,Sunways AG | Schubert G.,Sunways AG
Applied Physics Letters | Year: 2011

We show that the lateral spread of silicon in a screen-printed aluminum layer increases by (1.50±0.06) μm/°C, when increasing the peak firing temperature within an industrially applicable range. In this way, the maximum spread limit of diffused silicon in aluminum is predictable and does not depend on the contact area size but on the firing temperature. Therefore, the geometry of the rear side pattern can influence not only series resistance losses within the solar cell but the process of contact formation itself. In addition, too fast cooling lead to Kirkendall void formations instead of an eutectic layer. © 2011 American Institute of Physics. Source

Muller J.,Institute for Solar Energy Research Hamelin | Bothe K.,Institute for Solar Energy Research Hamelin | Gatz S.,Institute for Solar Energy Research Hamelin | Plagwitz H.,Sunways AG | And 2 more authors.
IEEE Transactions on Electron Devices | Year: 2011

We study recombination properties and the formation of base contacts, which are realized by local laser ablation of a dielectric stack and the subsequent full-area screen printing of an Al paste. Based on charge-carrier lifetime measurements using the camera-based calibration-free dynamic infrared lifetime mapping technique, we determine contact reverse saturation current densities as low as J0, cont = 9 × 102 fA/cm2 on 1.5-Ωcm p-type float-zone silicon (FZ-Si) and J0, cont = 2 × 104fA/cm2 on 200-Ωcm p-type FZ-Si. Scanning electron microscopy images reveal that the thickness of the highly Al-doped (Al-p+) layer considerably depends on the contact size and the contact layout (e.g., point or line contacts). Based on this finding, we show that Al-p+ layer thickness WAl-p+ significantly affects the contact recombination. As a result, we show which local contact geometry is most appropriate for the lowest contact recombination employing local Al-alloyed contacts. © 2011 IEEE. Source

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