Suntech Power Holdings Co., Ltd. is a producer of solar panels, with 2,000MW of annual production capacity by the end of 2011. With offices or production facilities in every major market, Suntech has delivered more than 13,000,000 solar panels to thousands of companies in more than 80 countries around the world. As the center for the company's global operations, Suntech headquarters, in Wuxi, China, features the world's largest building integrated solar facade.Suntech's fortunes have declined significantly since its peak in 2008, due to a glut in the market for solar products and problems with its investments. In March 2013 it announced a US$541 million bond payment default, becoming the first company from mainland China to default on its US bonds.Chinese banks subsequently filed to place Suntech’s main unit, Wuxi Suntech Power Holdings Co., Ltd., into insolvency. The company's American Depository Receipts were subsequently delisted from the New York Stock Exchange and placed on the over the counter exchange. Wikipedia.
Fahim N.F.,Swinburne University of Technology |
Jia B.,Swinburne University of Technology |
Shi Z.,Suntech Power |
Gu M.,Swinburne University of Technology
Optics Express | Year: 2012
Crystalline silicon solar cells are predominant and occupying more than 89% of the global solar photovoltaic market. Despite the boom of the innovative solar technologies, few can provide a low-cost radical solution to dramatically boost the efficiency of crystalline silicon solar cells, which has reached plateau in the past ten years. Here, we present a novel strategy to simultaneously achieve dramatic enhancement in the short-circuit current and the fill factor through the integration of Ag plasmonic nanoparticles and nanoshells on the antireflection coating and the screen-printed fingers of monocrystalline silicon solar cells, respectively, by a single step and scalable modified electroless displacement method. As a consequence, up to 35.2% enhancement in the energy conversion efficiency has been achieved due to the plasmonic broadband light trapping and the significant reduction in the series resistance. More importantly, this method can further increase the efficiency of the best performing textured solar cells from 18.3% to 19.2%, producing the highest efficiency cells exceeding the state-of-the-art efficiency of the standard screen-printed solar cells. The dual functions of the Ag nanostructures, reported for the first time here, present a clear contrast to the previous works, where plasmonic nanostructures were integrated into solar cells to achieve the short-circuit current enhancement predominately. Our method offers a facile, costeffective and scalable pathway for metallic nanostructures to be used to dramatically boost the overall efficiency of the optically thick crystalline silicon solar cells. © 2012 Optical Society of America.
Suntech Power | Date: 2011-08-02
This invention discloses a photovoltaic module comprising a photovoltaic module panel and a plurality of photovoltaic module frame segments adapted for holding the photovoltaic module therein; each of the photovoltaic module frame segments comprises a base wall, a photovoltaic module holding part and a first side wall extending between the base wall and the photovoltaic module holding part; the photovoltaic module holding part has a recess facing toward a first direction, the photovoltaic module holding part defines an upper face and a bottom face opposite to each other, wherein said first side wall is oriented at an obtuse angle relative to the bottom face of the photovoltaic module holding part. The advantageous effects of this invention are: the simple structure and the unique configuration of the frame can realize the stable stacking and the fast and stable assembly of the photovoltaic modules and improve the space efficiency when packaging and transporting, thereby reducing the packaging and transporting costs.
Suntech Power | Date: 2011-08-15
A smart photovoltaic assembly and a photovoltaic system are provided. The smart photovoltaic assembly comprises a photovoltaic assembly main body, an installation plate disposed on a back surface of the photovoltaic assembly main body, and a current leading terminal connector provided on the installation plate for leading an electric current line from the photovoltaic assembly main body, wherein the current leading terminal connector has a first connector interface adapted for connecting with a second connector interface of a complementary electronic device. The current leading terminal connector is in electrical connection with the complementary electronic device by mutual connection of the first connector interface and the second connector interface. The photovoltaic system comprises the above mentioned smart photovoltaic assembly, wherein the electronic device may be a diode module, an electric voltage converting device, a monitor or other types of electronic devices according to the need of a user.
Suntech Power and NewSouth Innovations Pty Ltd | Date: 2015-06-25
A surface region of a semiconductor material on a surface of a semiconductor device is doped during its manufacture, by coating the surface region of the semiconductor material with a dielectric material surface layer and locally heating the surface of the semiconductor material in an area to be doped to locally melt the semiconductor material with the melting being performed in the presence of a dopant source. The heating is performed in a controlled manner such that a region of the surface of the semiconductor material in the area to be doped is maintained in a molten state without refreezing for a period of time greater than one microsecond and the dopant from the dopant source is absorbed into the molten semiconductor. The semiconductor device includes a semiconductor material structure in which a junction is formed and may incorporate a multi-layer anti-reflection coating. The anti-reflection coating is located on a light receiving surface of the semiconductor material structure and comprises a thin layer of thermal expansion mismatch correction material having a thermal expansion coefficient less than or equal to that of the semiconductor material, to provide thermal expansion coefficient mismatch correction. An anti-reflection layer is provided having a refractive index and thickness selected to match the semiconductor material structure so as to give good overall antireflection properties to the solar cell.
Suntech Power | Date: 2010-09-27
A fission structure type junction box for a solar cell module (