Suncheon, South Korea
Suncheon, South Korea

Sunchon National University is a national research university founded in 1935, located in Suncheon, Jeollanam-do, Korea.SNU composes six colleges and five professional schools, and a student body of about 26,000. College of Life Science and Natural Resources, College of Social science, College of Humanities and Arts, College of Engineering, College of Education, and College of Pharmacy.Also various and differentiated programs such as human resources exchanges with overseas leading universities, global overseas training, overseas culture expedition, etc. The university maintains an undergraduate exchange program with the University of Sheffield, University of Oklahoma, and University of Missouri. Wikipedia.


Time filter

Source Type

Patent
Sunchon National University and Samsung | Date: 2012-11-23

There are provided an oxynitride-based phosphor and a light emitting device including the same, the oxynitride-based phosphor containing at least calcium (Ca), barium (Ba), silicon (Si), oxygen (O), and nitrogen (N) as host material components in a host material and having a rare-earth element dissolved in the host material as an activator, wherein the rare-earth element is at least one from a group consisting of manganese (Mn), cerium (Ce), praseodymium (Pr), neodymium (Nd), samarium (Sm), europium (Eu), gadolinium (Gd), dysprosium (Dy), terbium (Tb), holmium (Ho), erbium (Er), thulium (Tm), and ytterbium (Yb), and the host material has a monoclinic crystal structure in which a crystal lattice according to a peak of an X-ray powder diffraction pattern has values of a=7.076, b=23.888, c=4.827, =y=90, and =109.110.


Jung S.C.,Sunchon National University
Water Science and Technology | Year: 2011

In this study, TiO 2 photo-catalyst balls produced by the chemical vapour deposition method were used for degradation of organic dyes in which simultaneous irradiation of microwave and UV was evaluated. An electrodeless UV lamp that emits UV upon the irradiation of microwave was developed to irradiate microwave and UV simultaneously. The degradation reaction rate was shown to be higher with higher microwave intensity, under stronger acidic or basic conditions, and with a larger amount of O 2 gas or H 2O 2 addition. The effect of addition of H 2O 2 was not significant when photo-catalysis was used without additional microwave irradiation or when microwave was irradiated without the use of photo-catalysts. When H 2O 2 was added under simultaneous use of photo-catalysis and microwave irradiation, however, considerably higher degradation reaction rates were observed. © IWA Publishing 2011.


Nou I.-S.,Sunchon National University
BMC genomics | Year: 2014

BACKGROUND: LIM (Lin-11, Isl-1 and Mec-3 domains) genes have been reported to trigger the formation of actin bundles, a major higher-order cytoskeletal assembly, in higher plants; however, the stress resistance related functions of these genes are still not well known. In this study, we collected 22 LIM genes designated as Brassica rapa LIM (BrLIM) from the Brassica database, analyzed the sequences, compared them with LIM genes of other plants and analyzed their expression after applying biotic and abiotic stresses in Chinese cabbage.RESULTS: Upon sequence analysis these genes were confirmed as LIM genes and found to have a high degree of homology with LIM genes of other species. These genes showed distinct clusters when compared to other recognized LIM proteins upon phylogenetic analysis. Additionally, organ specific expression of these genes was observed in Chinese cabbage plants, with BrPLIM2a, b, c, BrDAR1, BrPLIM2e, f and g only being expressed in flower buds. Furthermore, the expression of these genes (except for BrDAR1 and BrPLIM2e) was high in the early flowering stages. The remaining genes were expressed in almost all organs tested. All BrDAR genes showed higher expression in flower buds compared to other organs. These organ specific expressions were clearly correlated with the phylogenetic grouping. In addition, BrWLIM2c and BrDAR4 responded to Fusarium oxysporum f. sp. conglutinans infection, while commonly two BrDARs and eight BrLIMs responded to cold, ABA and pH (pH5, pH7 and pH9) stress treatments in Chinese cabbage plants.CONCLUSION: Taken together, the results of this study indicate that BrLIM and BrDAR genes may be involved in resistance against biotic and abiotic stresses in Brassica.


Lee S.,Sunchon National University | Sohn K.-S.,Sunchon National University
Optics Letters | Year: 2010

The decay behavior of CaAlSiN3: Eu2+ was monitored as a function of the detection wavelength on the Eu2+ emission band for various Eu2+ concentrations from 0.0005 to 0.05. The decay at the higher-energy side was faster and less linear than the lower-energy side decay for all Eu2+ concentrations. This was due to an inhomogeneous broadening induced by the random distribution of Al and Si ions at a crystallographic site in the CaAlSiN3 structure and to the successive site-to-site energy transfer. This phenomenon caused a redshift of the Eu 2+ emission band as the Eu2+ concentration increased. © 2010 Optical Society of America.


Kang H.,University of California at Berkeley | Kitsomboonloha R.,University of California at Berkeley | Jang J.,University of California at Berkeley | Subramanian V.,University of California at Berkeley | Subramanian V.,Sunchon National University
Advanced Materials | Year: 2012

Using a novel high-speed, femtoliter-scale, micro-gravure printing with unprecedented scaling to the sub-10 μm regime and appropriately formulated, characterized, and optimized nanoparticle and polymer ink materials, highly scaled organic thin-film-transistors (OTFTs) are realized. They have excellent DC and AC characteristics and achieve record transition frequencies of 300 kHz, which opens up new classes of applications. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.


Patent
Sunchon National University | Date: 2014-02-05

Provided is a novel phosphor formed by using oxynitride having a good durability and possibly emits diverse color of light from green to yellow when using a blue emitting diode or a ultraviolet emitting diode as an excitation source. The phosphor according to the present invention includes a host material represented by the general formula of (Ca_(1-x)M1_(x))_(a)(La_(1-y)M2_(y))_(b)Si_(c)N_(d)O_(e) (in which 0.5b/a7, 1.5c/(a+b)3.5, 1d/c1.8, 0.6e/(a+b)2, 0x0.5, and 0y0.5) and having a monoclinic crystalline structure, and at least one dissolved activator selected from the group consisting of Mn, Ce, Pr, Nd, Sm, Eu, Gd, Dy, Tb, Ho, Er, Tm and Yb. M1 is at least one element selected from Ba, Mg, Sr, Mn and Zn, and M2 being at least one element selected from Y, Lu, Sc, Gd, Tb, Ce, Nd, Sm, Dy, Ho, Er, Tm, Yb, Al, Ga, Ge, Sn and In.


Patent
Sunchon National University | Date: 2013-09-06

A printing system using digital paper, the printing system including: digital paper enabling printing thereon; an information technology (IT) device configured to transmit, by wire or wirelessly, a command for printing information which is stored therein or being processed and the information to be printed; and an output module provided with a contact electrode for transmitting data to the digital paper and configured to receive, by wire or wirelessly, a printing command and the information to be printed transmitted from the IT device, convert the information to be printed into an image to be printed, and output the image to be printed to the digital paper.


Patent
Sunchon National University | Date: 2012-01-06

Disclosure relates to a phosphor formed by using oxynitride having a good durability and possibly emits diverse color of light from green to yellow when using a blue emitting diode or a ultraviolet emitting diode as an excitation source. The phosphor includes a host material represented by the general formula of (Ca_(1-x)M1_(x))_(a)(La_(1-y)M2_(y))_(b)Si_(c)N_(d)O_(e )(in which 0.5b/a7, 1.5c/(a+b)3.5, 1d/c1.8, 0.6e/(a+b)2, 0x0.5, and 0y0.5) and having a monoclinic crystalline structure, and at least one dissolved activator selected from the group consisting of Mn, Ce, Pr, Nd, Sm, Eu, Gd, Dy, Tb, Ho, Er, Tm and Yb. M1 is at least one element selected from Ba, Mg, Sr, Mn and Zn, and M2 being at least one element selected from Y, Lu, Sc, Gd, Tb, Ce, Nd, Sm, Dy, Ho, Er, Tm, Yb, Al, Ga, Ge, Sn and In.


Patent
Sunchon National University | Date: 2016-07-06

The present invention relates to a printing system using digital paper and a method for manufacturing the digital paper, and more particularly, to a technology for easily printing, on digital paper, an image or a document displayed on an IT device such as a smartphone, a tablet PC, a PC, or the like within one to two seconds without a printer using an NFC technology. A printing system using digital paper according to an embodiment of the present invention includes digital paper enabling printing thereon, an IT device configured to transmit, by wire or wirelessly, a command for printing information which is stored therein or being processed and the information to be printed, and an output module provided with a contact electrode for transmitting data to the digital paper and configured to receive, by wire or wirelessly, the command and the information to be printed transmitted from the IT device, convert the information to be printed into an image to be printed, and output the image to be printed to the digital paper.


Patent
Sunchon National University | Date: 2013-03-25

Provided is a phosphor including: a host material expressed by a general formula (Ca1-xMex)a(Ce1-y-zLayPrz)bSicXd (0.5b/a7, 1.5c/(a+b)3.5, 4d/(a+b6, 0x0.5, 0y<1, 0z0.5, and 0y+z<1, where X is at least one element selected from N, O, F, and Cl); and at least one activator that is selected from Mn, Ce, Pr, Nd, Sm, Eu, Gd, Dy, Tb, Ho, Er, Tm, and is solid-solutioned in the host material, wherein Me is at least one element selected from Ba, Mg, Sr, Mn, and Zn, and the host material includes, as a main phase, a phase that exhibits a diffraction peak having a relative intensity of 5% or more in ranges of Braggs angles (2) of 10.68-11.41, 18.52-19.46, 31.21-31.58, 31.61-32.20, and 36.81-37.49 of an X-ray diffraction pattern when a relative intensity of a diffraction peak having the strongest intensity is set to 100% in the X-ray powder diffraction pattern.

Loading Sunchon National University collaborators
Loading Sunchon National University collaborators