Sumitomo Electric Industries

Osaka, Japan

Sumitomo Electric Industries

Osaka, Japan

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Patent
Sumitomo Electric Industries | Date: 2017-05-17

This power conversion device includes: conversion devices for supplying AC powers to respective phases with respect to the neutral point of a three-phase AC system via reactors; and a control unit for controlling the conversion devices. Each conversion device includes: a step-up circuit for stepping up the DC input voltage value of DC power; and a single-phase inverter circuit. For each conversion device, when the absolute value of a voltage target value obtained, as an AC waveform to be outputted, by superimposing a third-order harmonic on a fundamental wave exceeds the inputted DC voltage, the control unit causes the step-up circuit to perform step-up operation to generate the absolute value of the voltage target value and causes the single-phase inverter circuit to only perform necessary polarity inversion, and when the absolute value of the voltage target value is smaller than the inputted DC voltage, the control unit stops the step-up operation of the step-up circuit and causes the single-phase inverter circuit to operate to generate the voltage target value.


Patent
Sumitomo Electric Industries | Date: 2017-05-17

A spot friction welding tool (1) is for performing spot friction welding of a first member and a second member by superposing the first member and the second member and pressing the spot friction welding tool (1) against the first member and the second member from the first member side. Each of the first member and the second member is a steel plate having a tensile strength of not lower than 270 MPa and not higher than 370 MPa. The spot friction welding tool (1) is rotatable around a rotation axis (4). The spot friction welding tool (1) includes a column (2) having a shoulder (5) at a tip end thereof, and a cylindrical or truncated conical probe (3) protruding from the shoulder (5) in a direction of extension of the rotation axis (4). When t (mm) represents a thickness of the second member and a second member insertion volume V (mm^(3)) represents a volume of the probe (3) inserted into the second member at the time of pressing the spot friction welding tool (1) against the first member and the second member, a relationship between V and t satisfies a following equation (1):


Patent
Sumitomo Electric Industries | Date: 2017-05-17

A spot friction welding tool (1) is for performing spot friction welding of a first member and a second member by superposing the first member and the second member and pressing the spot friction welding tool (1) against the first member and the second member from the first member side. Each of the first member and the second member is a steel plate having a tensile strength of not lower than 590 MPa. The spot friction welding tool (1) is rotatable around a rotation axis (4). The spot friction welding tool (1) includes a column (2) having a shoulder (5) at a tip end thereof, and a cylindrical or truncated conical probe (3) protruding from the shoulder (5) in a direction of extension of the rotation axis (4). When t (mm) represents a thickness of the second member and a second member insertion volume V (mm^(3)) represents a volume of the probe (3) inserted into the second member at the time of pressing the spot friction welding tool (1) against the first member and the second member, a relationship between V and t satisfies a following equation (1):


Patent
Sumitomo Electric Industries | Date: 2017-02-02

A microscope that makes it possible to acquire a hyperspectral image with high data precision includes a light source, an illumination optical system, an image-forming optical system, an imaging unit, a spectroscope, a stage, a drive unit, and a control unit. The illumination optical system converges, at a converging angle , illuminating light in a wavelength band included in the near-infrared region output from the light source, and emits the converged illuminating light onto the object being observed. The image-forming optical system forms an image based on transmitted and scattered light generated by the observed object by emission of the illuminating light onto the observed object. The sin is set to a value that does not exceed the numerical aperture of an objective lens that receives the transmitted and scattered light from the observed object.


Patent
Sumitomo Electric Industries | Date: 2017-05-24

A GaAs crystal (35) has x(1) not greater than 20 cm^(-1) in an expression 1 _(i) represents a Raman shift of a first peak attributed to oscillation of a longitudinal optical phonon of GaAs in a Raman spectrum measured at an ith point in measurement of Raman spectra at s points in a (100) plane, x_(BL) represents a Raman shift of an emission line peak of neon, and i and s are each a natural number greater than 0.


Patent
Sumitomo Electric Industries and Sumitomo Electric | Date: 2017-05-24

A resin has a viscosity of 10 Pas or less at a shear rate of 1 s^(-1) at 150C and a viscosity of 100 Pas or more at a shear rate of 1 s^(-1) at 125C, the resin having a low viscosity that allows easy penetration into strands of a wire harness at a heat shrinkage temperature and having a high viscosity that does not allow flowing of the resin at a temperature at which the wire harness is used. In particular, a highly flowable polyamide resin includes an acid component (a) containing, as a main component, a polymerized fatty acid which contains a dimer acid having 16 to 48 carbon atoms and in which the content of the dimer acid is 30% by mass or more, an acid component (b) containing, as a main component, a dibasic acid selected from the group consisting of dicarboxylic acids having 6 to 22 carbon atoms and ester derivatives thereof, and an amine component (c) containing a diamine as a main component, the acid component (a), the acid component (b), and the amine component (c) being linked by amide bonds, in which the mass ratio of the acid component (a) to the acid component (b) is in a predetermined range.


Patent
Sumitomo Electric Industries and Sumitomo Electric | Date: 2017-05-24

Single crystal diamond of which hardness and chipping resistance have been improved in a balanced manner, a method for manufacturing the single crystal diamond, and a tool containing the diamond are provided. Single crystal diamond contains nitrogen atoms, and a ratio of the number of isolated substitutional nitrogen atoms in the single crystal diamond to the total number of nitrogen atoms in the single crystal diamond is not lower than 0.02% and lower than 40%.


Patent
Sumitomo Electric Industries | Date: 2017-06-28

An embodiment of the invention enables each core in an end face to be readily identified by observation of either one end face, regardless of the presence or absence of a twist of a pertinent MCF and difference of ends. In a cross section of the MCF, a core group constellation has symmetry but each core in a core group is identifiable by breaking all types of symmetry in a common cladding, defined by a combination of the core group constellation with the common cladding, or, by making the fiber ends distinguishable.


Patent
Sumitomo Electric Industries | Date: 2017-03-15

An optical module and a method of assembling the optical module are disclosed. The optical module comprises a laser unit, a modulator unit, and a detector unit mounted on respective thermo-electric coolers (TECs). The modulator unit, which is arranged on an optical axis of the first output port from which a modulated beam is output, modulates the continuous wave (CW) beam output from the laser unit. On the other hand, the laser unit and the detector unit are arranged on another optical axis of the second output port from which another CW beam is output. The method of assembling the optical module first aligns one of the first combination of the laser unit and the modulator unit with the first output port and the second combination of the laser unit and the detector unit, and then aligns another of the first combination and the second combination.


Patent
Sumitomo Electric Industries | Date: 2017-03-31

A silicon carbide semiconductor device includes a silicon carbide substrate, a gate insulating film, a gate electrode, an interlayer insulating film, and a gate interconnection. The silicon carbide substrate includes: a first impurity region; a second impurity region provided on the first impurity region; and a third impurity region provided on the second impurity region so as to be separated from the first impurity region. A trench has a side portion and a bottom portion, the side portion extending to the first impurity region through the third impurity region and the second impurity region, the bottom portion being located in the first impurity region. When viewed in a cross section, the interlayer insulating film extends from above the third impurity region to above the gate electrode so as to cover the corner portion.

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