Sumitomo Electric Industries, Ltd. is a manufacturer of electric wire and optical fiber cables. Its headquarters are in Chūō-ku, Osaka, Japan. The company's shares are listed in the first section of the Tokyo, Nagoya Stock Exchanges, and the Fukuoka Stock Exchange. In the period ending March 2013, the company reported consolidated sales of $23 billion .The company was founded in 1897 to produce copper wire for electrical uses. Sumitomo operates in five business fields: Automotive, Information & Communications, Electronics, Environment & Energy, and Industrial materials and is developing in two others: Life Sciences and Materials & Resources. It has more than 350 subsidiaries and over 200,000 employees in more than 30 countries.Sumitomo Electric has traditionally had an intensive focus on R&D to develop new products. Its technologies have been used in major projects including traffic control in Thailand, improvement of telecom networks in Nigeria, membrane technology for waste water treatment in Korea, and bridge construction in Germany.Sumitomo Electric's electrical wiring harness systems, which are used to send information and energy to automobiles, hold the second largest market share in the world. Sumitomo Electric also continues to be the leading manufacturer of composite semiconductors , which are widely used in semiconductor lasers, LEDs, and mobile telecommunications devices. The company is one of the top three manufacturers in the world of optical fiber. Wikipedia.
Sumitomo Electric Industries and Sumitomo Electric | Date: 2015-06-11
An electronic device comprises a divider and a first filter. The divider comprises a first terminal for inputting a high-frequency signal, a second terminal coupled to the first terminal, and third and fourth terminals for distributing thereto the signal inputted from the first terminal. The first filter is coupled to the second terminal.
Sumitomo Electric | Date: 2015-04-24
A semiconductor laser device having a diffraction grating is disclosed. The semiconductor laser device comprises a first diffraction grating provided on a substrate, a second diffraction grating continuous to one end of the first diffraction grating along an optical waveguide direction, and an active layer provided above the first diffraction grating. The second diffraction grating has a pitch 1.05 times or greater, or 0.95 times or smaller of the pitch of the first diffraction grating.
Sumitomo Electric | Date: 2016-01-06
A method for fabricating a semiconductor device includes: forming a first film on a nitride semiconductor layer so as to contact the nitride semiconductor layer and have a thickness equal to or larger than 1 nm and equal to or smaller than 5 nm, the first film being made of silicon nitride having a composition ratio of silicon to nitrogen larger than 0.75, silicon oxide having a composition ratio of silicon to oxygen larger than 0.5, or aluminum; and forming a source electrode, a gate electrode and a drain electrode on the nitride semiconductor layer.
Sumitomo Electric Industries and Sumitomo Electric | Date: 2015-01-29
A mixer includes a first node to which an intermediate frequency (IF) signal is input; first and second transistors that respectively have control terminals supplied with local signals having mutually opposite phases and output terminals connected to the first node; a first filter that is connected between the output terminal of the second transistor and the first node and suppresses passage of the IF signal; a second node to which the IF signal is input; third and fourth transistors that respectively have control terminals supplied with local signals having mutually opposite phases and output terminals connected to the second node; a second filter that is connected between the output terminal of the fourth transistor and the second node and suppresses passage of the IF signal; and a combiner combining a signal output from the first node and a signal output from the second node.
Sumitomo Electric Industries and Sumitomo Electric | Date: 2016-01-06
A method for fabricating a semiconductor device including: forming a silicon layer on an upper face of a nitride semiconductor layer including a channel layer of a FET; thermally treating the nitride semiconductor layer in the process of forming the silicon layer or after the process of forming the silicon layer; and forming an insulating layer on an upper face of the silicon layer after the process of forming the silicon layer.