Osaka, Japan
Osaka, Japan

Sumitomo Electric Industries, Ltd. is a manufacturer of electric wire and optical fiber cables. Its headquarters are in Chūō-ku, Osaka, Japan. The company's shares are listed in the first section of the Tokyo, Nagoya Stock Exchanges, and the Fukuoka Stock Exchange. In the period ending March 2013, the company reported consolidated sales of $23 billion .The company was founded in 1897 to produce copper wire for electrical uses. Sumitomo operates in five business fields: Automotive, Information & Communications, Electronics, Environment & Energy, and Industrial materials and is developing in two others: Life Sciences and Materials & Resources. It has more than 350 subsidiaries and over 200,000 employees in more than 30 countries.Sumitomo Electric has traditionally had an intensive focus on R&D to develop new products. Its technologies have been used in major projects including traffic control in Thailand, improvement of telecom networks in Nigeria, membrane technology for waste water treatment in Korea, and bridge construction in Germany.Sumitomo Electric's electrical wiring harness systems, which are used to send information and energy to automobiles, hold the second largest market share in the world. Sumitomo Electric also continues to be the leading manufacturer of composite semiconductors , which are widely used in semiconductor lasers, LEDs, and mobile telecommunications devices. The company is one of the top three manufacturers in the world of optical fiber. Wikipedia.


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Patent
Sumitomo Electric Industries, Sumitomo Electric and Chrysanthemum Co. | Date: 2017-05-10

To provide a cable bead capable of reducing manufacturing time and harder to generate uneven twisting and a method for manufacturing the same. Specifically, there is provided a coreless ring-shaped cable bead 1 in which a single strand 2 crimped so as to have a 1 x m1 x d1 single-twisted structure or a m2 x n x d2 double-twisted structure is wound into a spiral-shaped gap part for storing (m1 - 1) or (m2 - 1) crimped strands having the above structure and is wound by m1 or m2 turns.


Patent
Sumitomo Electric | Date: 2017-05-03

A cutting tool including: a tool body (2) provided with an insert support seat (5) including a major seat surface (5a) that supports a bearing surface of a cutting insert, a plurality of seat side surfaces (5b, 5c) that supports side surfaces of the cutting insert at different positions, and a thinned portion (5d) continuous with the major seat surface and the seat side surfaces; and a cutting insert attached to the insert support seat, wherein a ridge at a position where the major seat surface and the thinned portion intersect, a ridge at a position where the seat side surface and the thinned portion intersect, and a ridge at a position where the thinned portions continuous with each other intersect are each formed of a convex arc curved surface.


Patent
Sumitomo Electric Industries and Sumitomo Electric | Date: 2017-05-03

A sintered body of the present invention is a sintered body including a first material and cubic boron nitride. The first material is partially-stabilized ZrO_(2) including 5 to 90 volume % of Al_(2)O_(3) dispersed in crystal grain boundaries or crystal grains of partially-stabilized ZrO_(2).


An optical receptacle and an optical module that implements the optical receptacle are disclosed. The optical receptacle provides a stub holding a coupling fiber in a center thereof, a bush press-fitting the stub therein, a sleeve, and a metal cover that is to be welded to an external metallic member. The coupling fiber has a type of polarization maintaining fiber. The bush is inserted into the cover as leaving a gap between the cover and the bush. The gap between the cover and the bush effectively relaxes or absorbs stresses induced during the welding caused in the coupling fiber.


Patent
Sumitomo Electric | Date: 2016-11-16

A process of forming a semiconductor device using plasma processes is disclosed. The semiconductor device includes a device area, a scribed area, and a peripheral area on a wafer, where these areas have respective conductive regions. The process includes steps of (a) implanting ions to isolate the conductive regions in the device area from the conductive region in the scribed area; (b) forming a metal film so as to cover a back surface, a side, and the peripheral area in the top surface of the wafer; (c) deposing insulating film on a whole surface of the wafer; and (d) selectively etching, by the plasma process, the insulating film so as to expose the conductive regions in the device area and the scribed area. During the plasma process, the metal film in the back surface of the wafer is connected the apparatus ground that effectively dissipates charges induced by the plasm to the apparatus ground through the metal film.


Patent
Sumitomo Electric | Date: 2016-11-15

A process of forming a semiconductor device is disclosed, where the semiconductor device provides a base and a semiconductor chip that is mounted on the base through solder. The process includes steps of: (a) melting the solder by a heater that is provided within a block of a bonding apparatus, where the block mounts the base thereon and the base provides the solder thereon; (b) heating the semiconductor chip by radiation beams in advance to mount the semiconductor chip onto the base; and (c) placing the semiconductor chip onto the melted solder.


Patent
Sumitomo Electric | Date: 2016-11-15

A semiconductor apparatus that comprises a package, an active device, and a passive device is disclosed. The package includes a metal base, a shell, and a lid. The active device is mounted of the metal base. The passive device is soldered on the metal base. The passive device includes an insulating substrate with a rectangular outer shape and a bottom electrode with a plane shape reflecting the rectangular outer shape of the insulating substrate. The insulating substrate is made of material with brittleness greater than that of the metal base. A feature of the invention is that the bottom electrode has cut corners.


Patent
Sumitomo Electric | Date: 2017-05-17

A cutting insert comprising a cutting edge (4) formed by an intersection ridge between a rake face (5) and a side face (6), the cutting edge including a major cutting edge (4a), a flat cutting edge (4c), and a chamfer edge (4b) disposed between the major cutting edge and the flat cutting edge, wherein in a direct view of a side face near the flat cutting edge, a ratio of installation area length L2 of the chamfer edge to installation area length L3 of the major cutting edge is L2 : L3 = 2 : 8 to 5 : 5, and inclination angle _(1) of the chamfer edge (4b) with respect to the flat cutting edge (4c) and inclination angle _(2) of the major cutting edge (4a) with respect to the flat cutting edge (4c) are set to have a relationship of _(1) < _(2).


Patent
Sumitomo Electric Industries and Sumitomo Electric | Date: 2017-05-24

A resin has a viscosity of 10 Pas or less at a shear rate of 1 s^(-1) at 150C and a viscosity of 100 Pas or more at a shear rate of 1 s^(-1) at 125C, the resin having a low viscosity that allows easy penetration into strands of a wire harness at a heat shrinkage temperature and having a high viscosity that does not allow flowing of the resin at a temperature at which the wire harness is used. In particular, a highly flowable polyamide resin includes an acid component (a) containing, as a main component, a polymerized fatty acid which contains a dimer acid having 16 to 48 carbon atoms and in which the content of the dimer acid is 30% by mass or more, an acid component (b) containing, as a main component, a dibasic acid selected from the group consisting of dicarboxylic acids having 6 to 22 carbon atoms and ester derivatives thereof, and an amine component (c) containing a diamine as a main component, the acid component (a), the acid component (b), and the amine component (c) being linked by amide bonds, in which the mass ratio of the acid component (a) to the acid component (b) is in a predetermined range.


Patent
Sumitomo Electric Industries and Sumitomo Electric | Date: 2017-05-24

Single crystal diamond of which hardness and chipping resistance have been improved in a balanced manner, a method for manufacturing the single crystal diamond, and a tool containing the diamond are provided. Single crystal diamond contains nitrogen atoms, and a ratio of the number of isolated substitutional nitrogen atoms in the single crystal diamond to the total number of nitrogen atoms in the single crystal diamond is not lower than 0.02% and lower than 40%.

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