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Patent
Sumitomo Chemical | Date: 2016-12-06

To provide a technology for controlling weeds and the like. A herbicidal composition comprising at least one compound selected from Group A, and dicamba N, N-bis-(3-aminopropyl)methylamine salt has a weed control effect: Group A: a group consisting of flumioxazin, sulfentrazone, saflufenacil, oxyfluorfen, fomesafen and a compound represented by the formula (I):


Patent
Sumitomo Chemical | Date: 2016-12-07

To provide a technology for controlling weeds and the like. A herbicidal composition comprising at least one compound selected from Group A, and 2,4-D choline salt has a weed control effect: Group A:


Patent
Sumitomo Chemical | Date: 2016-10-21

Disclosed is transition metal complex that serves as a catalytic component with which 1-hexene can be produced efficiently with excellent selectivity, even under high temperature conditions, by means of an ethylene trimerization reaction. Said transition metal complex is represented by the following general formula (1), wherein M^(1 )represents a Group 4 transition metal atom, and R^(1 )through R^(11 )and X^(1 )through X^(3 )each independently represent a hydrogen atom, a halogen atom, or a specific organic group.


There is provided an inorganic particle composite body comprising a layer of a substrate formed of a plastically deformable solid material and an inorganic particle layer that is composed of inorganic particles that do not plastically deform under a condition under which the solid material plastically deforms, that contains gaps defined by the inorganic particles, and that adjoins the layer of the substrate, wherein part of the solid material is in at least part of the gaps in the inorganic particle layer. This inorganic particle composite body is produced by a method including a preparation step of preparing an inorganic particle structural body comprising a layer of a substrate formed of a plastically deformable solid material and an inorganic particle layer that is composed of inorganic particles that do not plastically deform under a condition under which the solid material plastically deforms, that contains gaps defined by the inorganic particles, and that adjoins the layer of the substrate; and a filling step of plastically deforming at least part of the solid material contained in the inorganic particle structural body, thereby filling at least part of the gaps in the inorganic particle layer with part of the plastically deformed solid material.


Patent
Sumitomo Chemical | Date: 2016-09-14

An aspect of the present invention includes a slitting step of a battery separator original sheet lengthwise, the battery separator original sheet being conveyed lengthwise, to form a plurality of heat-resistant separators, the slitting step including a determining step of determining the widthwise dimension or widthwise position of the separator original sheet being conveyed.


Patent
Cambridge Display Technology and Sumitomo Chemical | Date: 2016-07-26

A method of forming a n-doped semiconductor layer wherein a film comprising an organic semiconductor and an n-dopant reagent is irradiated by light having a wavelength that is within an absorption range of the organic semiconductor, and wherein an absorption maximum wavelength of the n-dopant precursor is shorter than any peak wavelength of the light. The n-doped semiconductor layer may be an electron-injection layer of an organic light-emitting device.


Patent
Sumitomo Chemical | Date: 2016-10-13

A laminated body of the present invention includes: a porous film containing a polyolefin as a main component; and a porous layer on at least one surface of the porous film, the porous layer containing a resin, the laminated body satisfying 0(A)(B)20 mN/m, where (A) represents the critical surface tension over the outermost surface of the porous layer, and (B) represents the critical surface tension that, in a case where the porous layer has been peeled from the laminated body at an interface with the porous film, the porous film has on the side of the interface.


Patent
Sumitomo Chemical | Date: 2016-10-13

A laminated body of the present invention includes: a porous film containing a polyolefin as a main component; and a porous layer containing a resin, the laminated body satisfying (A)>(B), where (A) represents the amount of an increase in the dielectric strength with respect to the amount of an increase in the amount of the resin contained per unit area of the porous layer, and (B) represents the amount of an increase in the dielectric strength with respect to the amount of an increase in the amount of the polyolefin contained per unit area of the porous film. The laminated body is usable as a secondary battery separator having a higher dielectric strength.


Patent
Sumitomo Chemical | Date: 2017-04-12

Provided is a light emitting device excellent in luminance life. A light emitting device comprising an anode, a cathode, a first organic layer disposed between the anode and the cathode (a layer comprising one or more phosphorescent compounds) and a second organic layer disposed between the anode and the first organic layer (a layer comprising one or more phosphorescent compounds and a crosslinked body of a crosslinkable material), wherein at least one phosphorescent compound contained in the first organic layer and at least one phosphorescent compound contained in the second organic layer are the same phosphorescent compound represented by the formula (1):^(1) represents an integer of 1 or more, n^(2) represents an integer of 0 or more, E^(1) and E^(2) represent a carbon atom or the like, the ring L^(1) represents an aromatic heterocyclic ring, the ring L^(2) represents an aromatic hydrocarbon ring or the like, A^(1)-G^(1)-A^(2) represents an anionic bidentate ligand, and at least one ring selected from among the ring L^(1) and the ring L^(2) has an aryl group, a monovalent heterocyclic group or a substituted amino group.


Patent
Sumitomo Chemical | Date: 2017-04-19

There is provided a semiconductor multilayer structure, including:an n-type GaN layer; and a p-type GaN layer which is formed on the n-type GaN layer and into which Mg is ion-implanted, and generating an electroluminescence emission having a peak at a photon energy of 3.0 eV or more, by applying a voltage to a pun-junction formed by the n-type GaN layer and the p-type GaN layer.

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