Entity

Time filter

Source Type


Kitabayashi H.,Power Device Development Division | Ishihara K.,Compound Semiconductor Materials Division | Kawabata Y.,Power Device Development Division | Matsubara H.,Compound Semiconductor Materials Division | And 3 more authors.
SEI Technical Review | Year: 2011

We have developed super high brightness infrared light emitting diodes (LEDs). The LEDs at the wavelength of 870 nm reached record-breaking output power of 9.8 mW, which was more than 1.3 times higher than the evaluated value of the conventional 850 nm LEDs. These super high brightness infrared LEDs can be fabricated without using time- and cost-consuming wafer bonding technologies such as metal bonding and glue bonding. They are also free from reliability issues possibly arising from the bonding interfaces. The new super high brightness infrared LEDs are promising as a light source for future applications such as high sensitivity sensors. Source


Kitabayashi H.,Electronics and Materials R and D Laboratories | Kawabata Y.,Electronics and Materials R and D Laboratories | Matsubara H.,Electronics and Materials R and D Laboratories | Miyahara K.-I.,Sumiden Semiconductor Materials Co. | Tanaka S.,Sumiden Semiconductor Materials Co.
SEI Technical Review | Year: 2010

We have developed the world highest optical output power infrared light emitting diode (LED) at 940nm. With a newly developed epitaxial layer structure and a p-type electrode, the optical output power was increased to 5.3 mw at 20 mA DC current, which was about 2.5 times higher than that of a conventional 940 nm LEDs. Forward voltage was 1.35V. The full width of half maximum (FWHM) of spectrum wavelength of the device was 25 nm, which is less than half of that of the conventional one. Acceleration testing showed a lifetime of over 10,000 hours with a DC current of 100 mA at 25°C. This new high output power infrared LED is promising as a light source for future applications such as high sensitivity sensors. Source


Morishita T.,Sumiden Semiconductor Materials Co. | Kounoike K.,Sumiden Semiconductor Materials Co. | Fujiwara S.,Sumiden Semiconductor Materials Co. | Hagi Y.,Sumiden Semiconductor Materials Co. | And 3 more authors.
CS MANTECH 2016 - International Conference on Compound Semiconductor Manufacturing Technology | Year: 2016

The market requires a mass production of 6-inch InP substrates with high quality and reasonable price. To respond to this market requirement, we have focused on the cost effective manufacturing by reducing both direct production cost and indirect investment cost. The optimization of crystal growth furnace and polishing process makes it possible to respond to this market requirement effectively. © 2016, CS Mantech. All rights reserved. Source

Discover hidden collaborations