Sumco Corporation | Date: 2015-09-17
A contamination control method includes: a wafer loading step for loading a monitor wafer in a chamber of a vapor deposition apparatus; a heat-treatment repetition step for consecutively repeating a heat-treatment step for thermally treating the monitor wafer for predetermined times; a wafer unloading step for unloading the monitor wafer from the chamber; and a wafer-contamination-evaluation step for evaluating a metal-contamination degree of the monitor wafer unloaded out of the chamber. The heat-treatment step includes a first heat-treatment step for thermally treating the monitor wafer in an atmosphere of a hydrogen-containing gas and a second heat-treatment step for thermally treating the monitor wafer in an atmosphere of a hydrogen-chloride-containing gas and the hydrogen-containing gas.
Sumco Corporation | Date: 2015-10-08
Provided is a wafer for solar cell which can be produced using a polycrystalline semiconductor wafer cut out using a bonded abrasive wire, which wafer can be used for manufacturing a solar cell with high conversion efficiency. In a wafer for solar cell before acid texturing of the present invention, produced from a polycrystalline semiconductor wafer cut out using a bonded abrasive wire, an amorphous layer does not exist, and irregularities caused due to the cutting using the bonded abrasive wire are left in at least one surface of the wafer for solar cell.
Sumco Corporation | Date: 2015-09-16
An epitaxial silicon wafer includes: a silicon wafer; and a silicon epitaxial layer formed on the silicon wafer, in which a W concentration obtained by a metal analysis of a surface of the silicon epitaxial layer using an inductively coupled plasma mass spectrometry is 110
Sumco Corporation | Date: 2015-03-13
It is judged whether or not an average gray level of an image of a wafer W that is an inspection target and that has been imaged by the light receiving part
SUMCO Corporation | Date: 2015-07-14
Provided is an epitaxial silicon wafer with reduced metal contamination achieved by higher gettering capability and a method of efficiently producing the same. The method of producing an epitaxial wafer includes a wafer production step of pulling a single crystal silicon ingot having a COP formation region by Czochralski process, and subjecting the obtained single crystal silicon ingot to slicing, thereby producing a silicon wafer