SUMCO Corporation

Japan

SUMCO Corporation

Japan
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The capacity of respective vitreous silica crucible is grasped precisely to predict the initial liquid surface level of the silicon melt in the vitreous silica crucible. Thereby the dipping process of the seed crystal is reliably performed. Spatial coordinates of multiple points on an inner surface of the vitreous silica crucible prior to filling raw material in the vitreous silica crucible, and a three-dimensional shape of the inner surface of the vitreous silica crucible from a combination of polygons having each measurement point as a vertex coordinate is specified (S11); a predictive value of an initial liquid surface level of the silicon melt in the vitreous silica crucible is preset (S12); a volume of the silicon melt satisfying the predictive value of the initial liquid surface level is obtained based on the three-dimensional shape of the inner surface of the vitreous silica crucible (S13); a weight of the silicon melt having the volume is obtained (S14); raw material having the weight is filled in the vitreous silica crucible (S15); a dipping control of the seed crystal is performed based on the predictive value of the initial liquid surface level (S17).


Provided is a destructive inspection method and a quality determination method of vitreous silica crucible capable of inspecting in a condition as close as possible to the actual status of use. The destructive inspection method of the vitreous silica crucible according to the present disclosure, evaluates a crack state of an inner surface of a vitreous silica crucible 1 for pulling a silicon single crystal supported by a graphite susceptor 2 when a load is instantaneously applied to one point on the inner surface via an automatic center punch 10 while pushing the tip portion of the automatic center punch 10 against the inner surface.


Patent
Sumco Corporation | Date: 2017-04-14

A quality-evaluated vitreous silica crucible for pulling silicon single crystal is provided, wherein an inner surface of the vitreous silica crucible has regions where surface defects including brown rings are to be generated when pulling silicon single crystal. The regions are distinguished using an infrared absorption spectrum or a Raman shift of the regions, wherein a position of each region and/or a density of the regions are/is specified.


An aspect of the present invention relates to a method of managing a DLTS measurement apparatus, wherein the DLTS measurement apparatus comprises a sample stage which has a measurement target sample placement surface and on which a measurement target sample having a semiconductor junction on one surface of a semiconductor sample and an ohmic layer on the other surface is placed in which the ohmic layer and the measurement target sample placement surface face each other; a first wiring having a tip contacting or being to contact with the measurement target sample; and a second wiring having a tip contacting or being to contact with the sample stage, and the method comprising determining whether or not a measurement value measured by the DLTS measurement apparatus is in a preliminarily set allowable range; and performing maintenance processing of exchanging or repairing at least one of a whole or a part of the sample stage, a whole or a part of the first wiring, and a whole or a part of the second wiring, in a case where the measurement value is outside the preliminarily set allowable range as a result of the determination.


Patent
Sumco Corporation | Date: 2016-11-17

A method of manufacturing a vitreous silica crucible includes: a taking-out process of taking out the vitreous silica crucible from the mold, a honing process of removing the unfused silica powder layer on the outer surface of the vitreous silica crucible, and further comprising, after the taking-out process and before the honing process, a marking process of marking an identifier comprised of one or more groove line on the outer surface of the vitreous silica crucible, wherein the groove line after the honing process has a cross-sectional shape of an inverse trapezoid and a depth of 0.2 to 0.5 mm, and a width of 0.8 mm or more at the opening of the groove line. The groove line is formed by repeating shifting a focal point of a laser.


The present invention provides a method of more efficiently producing a semiconductor epitaxial wafer, which can suppress metal contamination by achieving higher gettering capability. A method of producing a semiconductor epitaxial wafer 100 according to the present invention includes a first step of irradiating a semiconductor wafer 10 with cluster ions 16 to form a modifying layer 18 formed from a constituent element of the cluster ions 16 in a surface portion 10A of the semiconductor wafer; and a second step of forming an epitaxial layer 20 on the modifying layer 18 of the semiconductor wafer 10.


A method for producing an epitaxial silicon wafer comprises applying a vapor deposition on a silicon wafer to produce the epitaxial silicon wafer. Vapor deposition equipment, in which the vapor deposition is conducted, at least includes a chamber, and a hydrogen-chloride-gas supply apparatus that is in communication and connected with an inside of the chamber to supply hydrogen chloride gas into the chamber. A valve that includes a diaphragm for regulating a flow of the hydrogen chloride gas from an inlet channel to an outlet channel is disposed in the hydrogen-chloride-gas supply apparatus. A W-containing NiCrMo alloy material subjected to a passivation treatment is used for the diaphragm. When a maintenance work is to be done to the inside of the chamber, the hydrogen chloride gas is supplied from the hydrogen-chloride-gas supply apparatus into the chamber.


Patent
Sumco Corporation | Date: 2016-12-13

A method of manufacturing a vitreous silica crucible includes an inspection method comprising: a measurement step of measuring an infrared absorption spectrum or a Raman shift of a measurement point on an inner surface of the vitreous silica crucible; a determining step of predicting whether a surface defect region is generated or not in the measurement point based on an obtained spectrum to determine a quality of the vitreous silica crucible.


Patent
Sumco Corporation | Date: 2016-08-25

Disclosed herein is a method for manufacturing a single crystal, the method includes: photographing an image of a boundary portion between the single crystal and a melt by a camera during a single crystal pull-up process according to a Czochralski method; comparing at least one pixel included in a left side region with respect to an extension line of a pull-up shaft of the single crystal and at least one pixel included in a right side region with respect to the extension line; and determining an abnormality in a luminance distribution of the image from a result of the comparing.


Patent
Sumco Corporation | Date: 2016-08-19

Provided is an SOI wafer manufacturing method that allows production of an SOI wafer having a high gettering ability and a small resistance variance in a thickness direction of an active layer, at high productivity. The SOI wafer manufacturing method includes a first step of implanting light element ions to a surface of at least one of a first substrate and a second substrate to form, on the at least one of the first substrate and the second substrate, a modified layer in which the light element ions are present in solid solution, a second step of forming an oxide film on a surface of at least one of the first substrate and the second substrate, a third step of bonding the first substrate and the second substrate according to a bonding thermal processing, and a fourth step of obtaining an active layer by thinning the first substrate.

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