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Denkena B.,Leibniz University of Hanover | Erkens G.,Sulzer Metaplas GmbH | Breidenstein B.,Leibniz University of Hanover
Materials Science Forum | Year: 2010

Premature collapse in terms of cohesive damage of PVD-coated carbide cutting tools often results in a time and cost consuming immediate interrupt of the cutting process. It is assumed that the residual stress state of the composite coating - substrate in combination with external loads during tool use is responsible for cohesive damage. The X-ray diffraction methods sin 2ψ and scattering vector are applied for determination of the residual stress depth distribution in the coating and the substrate's subsurface. Investigations of the residual stress state of commercial PVD-coated carbide cutting tools are presented. It is determined to what extent the single process steps during tool manufacturing are responsible for the final residual stress state of the PVD-coated tool. Furthermore the meaning of the PVD-coating process for the substrate's residual stress state is investigated. Moreover, possibilities of controlling the residual stress state of the substrate by changing process variables of selected process steps are analyzed. © (2010) Trans Tech Publications.

Sarakinos K.,RWTH Aachen | Alami J.,Sulzer Metaplas GmbH | Konstantinidis S.,University of Mons
Surface and Coatings Technology | Year: 2010

High power pulsed magnetron sputtering (HPPMS) is an emerging technology that has gained substantial interest among academics and industrials alike. HPPMS, also known as HIPIMS (high power impulse magnetron sputtering), is a physical vapor deposition technique in which the power is applied to the target in pulses of low duty cycle (< 10%) and frequency (< 10 kHz) leading to pulse target power densities of several kW cm- 2. This mode of operation results in generation of ultra-dense plasmas with unique properties, such as a high degree of ionization of the sputtered atoms and an off-normal transport of ionized species, with respect to the target. These features make possible the deposition of dense and smooth coatings on complex-shaped substrates, and provide new and added parameters to control the deposition process, tailor the properties and optimize the performance of elemental and compound films. © 2009 Elsevier B.V. All rights reserved.

Sulzer Metaplas Gmbh | Date: 2014-01-24

Evaporation source, in particular for use in a sputtering process or in a vacuum arc evaporation process, preferably a cathode vacuum arc evaporation process. The evaporation source includes an inner base body which is arranged in an outer carrier body and which is arranged with respect to the outer carrier body such that a cooling space in flow communication with an inlet and an outlet is formed between the base body and the carrier body. In accordance with the invention, the cooling space includes an inflow space and an outflow space, and the inflow space is in flow communication with the outflow space via an overflow connection for the cooling of the evaporation source such that a cooling fluid can be conveyed from the inlet via the inflow space the overflow connection and the outflow space to the outlet.

The invention relates to a coating method for depositing a layer system formed from hard material layers on a substrate, by depositing at least one contact layer including the evaporation material on the surface of the substrate only by means of a cathodic vacuum arc evaporation source. After the depositing of the contact layer, at least one intermediate layer is deposited in the form of a nano-layer intermediate layer in a hybrid phase or as a nanocomposite layer, including the evaporation material and the discharge material, by parallel operation of a cathodic vacuum arc evaporation source and of a magnetron discharge source.

Sulzer Metaplas Gmbh | Date: 2014-02-24

Cylindrical evaporation source which includes, at an outer cylinder wall, target material to be evaporated as well as a first magnetic field source and a second magnetic field source which form at least a part of a magnet system and are arranged in an interior of the cylindrical evaporation source for generating a magnetic field. In this respect, first magnetic field source and second magnetic field source are provided at a carrier system such that a shape and/or a strength of the magnetic field can be set in a predefinable spatial region in accordance with a predefinable scheme. In embodiments, the carrier system is configured for setting the shape and/or strength of the magnetic field of the carrier system such that the first magnetic field source is arranged at a first carrier arm and is pivotable by a predefinable pivot angle (

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